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317 GHz InAlGaN/GaN HEMTs with extremely low on-resistance
Lee, Dong Seup, Laboutin, Oleg, Cao, Yu, Johnson, Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael, Saunier, Paul, Kopp, David, Fay, Patrick, Palacios, TomásVolume:
10
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201200541
Date:
May, 2013
File:
PDF, 286 KB
english, 2013