A Physical Model for Grain-Boundary-Induced Threshold...

IEEE Transactions on Electron Devices 2012 / 09 Vol. 59; Iss. 9

A Physical Model for Grain-Boundary-Induced Threshold Voltage Variation in Polysilicon Thin-Film Transistors

Ho, Chih-Hsiang, Panagopoulos, Georgios, Roy, Kaushik
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Volume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2012.2205387
Date:
September, 2012
File:
PDF, 1.03 MB
english, 2012
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