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Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors
Xinwen Hu,, Karmarkar, A.P., Bongim Jun,, Fleetwood, D.M., Schrimpf, R.D., Geil, R.D., Weller, R.A., White, B.D., Bataiev, M., Brillson, L.J., Mishra, U.K.Volume:
50
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2003.820792
Date:
December, 2003
File:
PDF, 356 KB
english, 2003