Direct Measurement of MOSFET Channel Strain by Means of...

IEEE Electron Device Letters 2010 / 05 Vol. 31; Iss. 5

Direct Measurement of MOSFET Channel Strain by Means of Backside Etching and Raman Spectroscopy on Long-Channel Devices

Agaiby, Rouzet M B, Olsen, Sarah H, Eneman, Geert, Simoen, Eddy, Augendre, Emmanuel, O'Neill, Anthony G
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2010.2043496
Date:
May, 2010
File:
PDF, 238 KB
english, 2010
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