Volume 31; Issue 5

IEEE Electron Device Letters

Volume 31; Issue 5
1

Area-Efficient Fast-Speed Lateral IGBT With a 3-D n-Region-Controlled Anode

Wensuo Chen, Bo Zhang, Zhaoji Li
Journal:
IEEE Electron Device Letters
Year:
2010
Language:
english
File:
PDF, 404 KB
english, 2010
6

PBTI/NBTI-Related Variability in TB-SOI and DG MOSFETs

Cheng, B, Brown, A R, Roy, S, Asenov, A
Journal:
IEEE Electron Device Letters
Year:
2010
Language:
english
File:
PDF, 583 KB
english, 2010
10

Analysis and Evaluation of a BJT-Based 1T-DRAM

Sung-Jin Choi,, Jin-Woo Han,, Dong-Il Moon,, Yang-Kyu Choi,
Journal:
IEEE Electron Device Letters
Year:
2010
Language:
english
File:
PDF, 440 KB
english, 2010
15

Low-Frequency Noise in Vertical InAs Nanowire FETs

K. Persson, E. Lind, A. W. Dey, C. Thelander, H. Sjoland, L. Wernersson
Journal:
IEEE Electron Device Letters
Year:
2010
Language:
english
File:
PDF, 294 KB
english, 2010
25

Four-Terminal Relay Design for Improved Body Effect

Jeon, Jaeseok, Nathanael, Rhesa, Pott, Vincent, Tsu-Jae King Liu,
Journal:
IEEE Electron Device Letters
Year:
2010
Language:
english
File:
PDF, 336 KB
english, 2010
29

Synchronous One-Pole $\hbox{LiNbO}_{3}$ Surface Acoustic Wave Mass Sensors

Hsu-Cheng Ou,, Zaghloul, Mona
Journal:
IEEE Electron Device Letters
Year:
2010
Language:
english
File:
PDF, 658 KB
english, 2010
35

Self-Aligned Thermoelectric Infrared Sensors With Post-CMOS Micromachining

Dehui Xu,, Bin Xiong,, Yuelin Wang,
Journal:
IEEE Electron Device Letters
Year:
2010
Language:
english
File:
PDF, 354 KB
english, 2010
36

Correlation Between TDDB and VRDB for Low-$k$ Dielectrics With Square Root $E$ Model

Mingte Lin,, Su, K C
Journal:
IEEE Electron Device Letters
Year:
2010
Language:
english
File:
PDF, 287 KB
english, 2010