Impacts of post-metallization annealing on the memory...

Semiconductor Science and Technology 2013 / 02 Vol. 28; Iss. 2

Impacts of post-metallization annealing on the memory performance of Ti/HfO 2 -based resistive memory

Chen, Pang-Shiu, Chen, Yu-Sheng, Lee, Heng-Yuan
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Volume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/2/025016
Date:
February, 2013
File:
PDF, 1.13 MB
english, 2013
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