Volume 28; Issue 2

Semiconductor Science and Technology

Volume 28; Issue 2

1

Variable range hopping conduction in N- and P-type in situ doped polycrystalline silicon nanowires

Pichon, L, Jacques, E, Rogel, R, Salaun, A C, Demami, F

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 434 KB

english, 2013

2

Investigation of phase segregation in sol–gel derived ZnMgO thin films

Singh, Amanpal, Vij, Ankush, Kumar, Dinesh, Khanna, P K, Kumar, Mukesh, Gautam, Sanjeev, Chae, K H

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.55 MB

english, 2013

3

Electro-thermal behaviour of a sub-micron silicon diode

Muscato, O, Stefano, V Di

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 915 KB

english, 2013

4

A nonlinear gain model for multiple quantum well transistor lasers

Taghavi, Iman, Kaatuzian, Hassan, Leburton, Jean-Pierre

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 554 KB

english, 2013

5

Enhanced optical performance of electrochemically etched porous silicon carbide

Naderi, N, Hashim, M R, Saron, K M A, Rouhi, J

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.19 MB

english, 2013

6

Impacts of post-metallization annealing on the memory performance of Ti/HfO 2 -based resistive memory

Chen, Pang-Shiu, Chen, Yu-Sheng, Lee, Heng-Yuan

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.13 MB

english, 2013

7

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

Mazzucato, S, Boonpeng, P, Carrère, H, Lagarde, D, Arnoult, A, Lacoste, G, Zhang, T, Balocchi, A, Amand, T, Marie, X, Fontaine, C

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 559 KB

english, 2013

8

High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO 2 gate insulators

Seok, Ogyun, Ahn, Woojin, Han, Min-Koo, Ha, Min-Woo

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 812 KB

english, 2013

9

Interface recombination influence on carrier transport

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 156 KB

english, 2013

10

Device characteristics and thermal analysis of AlGaInP-based red monolithic light-emitting diode arrays

Kim, Myung Sub, Lee, Hee Kwan, Yu, Jae Su

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 776 KB

english, 2013

11

On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/Al x Ga 1− x As heterostructures

Koop, E J, Iqbal, M J, Limbach, F, Boute, M, van Wees, B J, Reuter, D, Wieck, A D, Kooi, B J, van der Wal, C H

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 722 KB

english, 2013

12

Detrimental effects of atomic hydrogen on the formation of Schottky barriers in p-type Ge

Kolkovsky, Vl, Klemm, S, Allardt, M, Weber, J

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 337 KB

english, 2013

13

Photolithography-free fabrication of organic light-emitting diodes for lighting applications

Seo, I H, Park, J W, Shin, D C

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 859 KB

english, 2013

14

The effects of the pressure and the oxygen content of the sputtering gas on the structure and the properties of zinc oxy-nitride thin films deposited by reactive sputtering of zinc

Jiang, Nanke, Georgiev, Daniel G, Jayatissa, Ahalapitiya H

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 2.23 MB

english, 2013

15

Unexpected surface implanted layer in static random access memory devices observed by microwave impedance microscope

Kundhikanjana, W, Yang, Y, Tanga, Q, Zhang, K, Lai, K, Ma, Y, Kelly, M A, Li, X X, Shen, Z-X

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 858 KB

english, 2013

16

Hot wall epitaxy of Sb 2 Te 3 layers: coherent hetero-epitaxy on InAs(1 1 1) and Sb substitution in Cu-mediated growth

Takagaki, Y, Jenichen, B, Jahn, U, Manzke, Y, Ramsteiner, M, Friedland, K-J

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.61 MB

english, 2013

17

The effect of interface state continuum on the impedance spectroscopy of semiconductor heterojunctions

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 775 KB

english, 2013

18

Enhancement of the spin conductance of a spin filter

Kim, J, Kim, H, Kim, N

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 531 KB

english, 2013

19

High operating voltage application of transparent a-InGaZnO thin-film transistors

Jeong, Jaewook, Lee, Gwang Jun, Kim, Joonwoo, Kim, Jung-Hye, Choi, Byeongdae

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.17 MB

english, 2013

20

Disilane-based cyclic deposition/etch of Si, Si:P and Si 1− y C y :P layers: I. The elementary process steps

Hartmann, J M, Benevent, V, Barnes, J P, Veillerot, M, Deguet, C

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.99 MB

english, 2013

21

Disilane-based cyclic deposition/etch of Si, Si:P and Si 1− y C y :P layers: II. The CDE features

Hartmann, J M, Benevent, V, Barnes, J P, Veillerot, M, Prévitali, B, Batude, P

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 3.17 MB

english, 2013

22

Monte Carlo calculations of the electron impact ionization in n-type InSb crystal

Ašmontas, S, Raguotis, R, Bumelienė, S

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 234 KB

english, 2013

23

Enhancement in photoluminescence from 1 eV GaInNAs epilayers subject to 7 MeV electron irradiation

Pavelescu, E-M, Kudrawiec, R, Bălţăţeanu, N, Spânulescu, S, Dumitrescu, M, Guina, M

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 281 KB

english, 2013

24

Corrigendum: Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Lachab, M, Sultana, M, Fatima, H, Adivarahan, V, Fareed, Q, Khan, M A

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 106 KB

english, 2013

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