Investigation of the RTN Distribution of Nanoscale MOS...

IEEE Electron Device Letters 2013 / 05 Vol. 34; Iss. 5

Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-State

Amoroso, Salvatore M., Compagnoni, Christian Monzio, Ghetti, Andrea, Gerrer, Louis, Spinelli, Alessandro S., Lacaita, Andrea L., Asenov, Asen
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2250477
Date:
May, 2013
File:
PDF, 329 KB
english, 2013
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