Volume 34; Issue 5

IEEE Electron Device Letters

Volume 34; Issue 5

1

Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon

Marin, Oscar, Urteaga, Raul, Comedi, David, Koropecki, Roberto R.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 538 KB

english, 2013

2

Carbon Nanotube Cathodes for Electron Gun

Ulisse, Giacomo, Brunetti, Francesca, Tamburri, Emanuela, Orlanducci, Silvia, Cirillo, Matteo, Terranova, Maria Letizia, Carlo, Aldo Di

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 811 KB

english, 2013

3

UV Enhanced Field Emission for β-Ga2O3 Nanowires

Wu, Y. L., Chang, Shoou-Jinn, Liu, C. H., Weng, Wen-Yin, Tsai, Tsung-Ying, Hsu, Cheng-Liang

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 741 KB

english, 2013

4

Electrical and Thermal Properties of Carbon-Nanotube Composite for Flexible Electric Heating-Unit Applications

Chu, Kunmo, Kim, Dongouk, Sohn, Yoonchul, Lee, Sangeui, Moon, Changyoul, Park, Sunghoon

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 582 KB

english, 2013

5

Hydrogenation of Graphene Nanoribbon Edges: Improvement in Carrier Transport

Zheng, Peng, Bryan, Sarah E., Yang, Yinxiao, Murali, Raghu, Naeemi, Azad, Meindl, James D.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 901 KB

english, 2013

6

Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage

Hwang, Injun, Oh, Jaejoon, Choi, Hyuk Soon, Kim, Jongseob, Choi, Hyoji, Kim, Joonyong, Chong, Soogine, Shin, Jaikwang, Chung, U-In

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 500 KB

english, 2013

7

Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-State

Amoroso, Salvatore M., Compagnoni, Christian Monzio, Ghetti, Andrea, Gerrer, Louis, Spinelli, Alessandro S., Lacaita, Andrea L., Asenov, Asen

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 329 KB

english, 2013

8

Low-Temperature Quantum Transport Characteristics in Single n-Channel Junctionless Nanowire Transistors

Li, Xiaoming, Han, Weihua, Ma, Liuhong, Wang, Hao, Zhang, Yanbo, Yang, Fuhua

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 396 KB

english, 2013

9

Junctionless Tunnel Field Effect Transistor

Ghosh, Bahniman, Akram, Mohammad Waseem

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 705 KB

english, 2013

10

Dynamic Analysis of Current-Voltage Characteristics of Nanoscale Gated-Thyristors

Paolucci, Giovanni M., Compagnoni, Christian Monzio, Castellani, Niccolo, Carnevale, Gianpietro, Fantini, Paolo, Ventrice, Domenico, Lacaita, Andrea L., Spinelli, Alessandro S., Benvenuti, Augusto

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 287 KB

english, 2013

11

Solution-Based PbS Photodiodes, Integrable on ROIC, for SWIR Detector Applications

Heves, Emre, Ozturk, Cem, Ozguz, Volkan, Gurbuz, Yasar

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 423 KB

english, 2013

12

Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress

Chen, Fa-Hsyang, Pan, Tung-Ming, Chen, Ching-Hung, Liu, Jiang-Hung, Lin, Wu-Hsiung, Chen, Po-Hsueh

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 697 KB

english, 2013

13

Hot-Carrier Effect on Amorphous In-Ga-Zn-O Thin-Film Transistors With a Via-Contact Structure

Hsieh, Tien-Yu, Chang, Ting-Chang, Chen, Yu-Te, Liao, Po-Yung, Chen, Te-Chih, Tsai, Ming-Yen, Chen, Yu-Chun, Chen, Bo-Wei, Chu, Ann-Kuo, Chou, Cheng-Hsu, Chung, Wang-Cheng, Chang, Jung-Fang

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 404 KB

english, 2013

14

Dosimetric Performance of Single-Crystal Diamond X-Ray Schottky Photodiodes

Bellucci, Alessandro, Orlando, Stefano, Caputo, Domenico, Cappelli, Emilia, Trucchi, Daniele M.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 718 KB

english, 2013

15

Impact of Charge Trapping Layer Thickness and New Trade-Off in Performance Characteristics of 3-D SONOS Devices

Arreghini, Antonio, Kar, Gouri Sankar, Van den bosch, Geert, Van Houdt, Jan

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 263 KB

english, 2013

16

Reliability Comparison of ISSG Oxide and HTO as Tunnel Dielectric in 3-D–SONOS Applications

Qiao, Fengying, Arreghini, Antonio, Blomme, Pieter, Date, Lucien, Van den Bosch, Geert, Pan, Liyang, Xu, Jun, Van Houdt, Jan

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 329 KB

english, 2013

17

Postcycling LRS Retention Analysis in HfO2/Hf RRAM 1T1R Device

Chen, Yang Yin, Degraeve, Robin, Govoreanu, Bogdan, Clima, Sergiu, Goux, Ludovic, Fantini, Andrea, Kar, Gouri Sankar, Wouters, Dirk J., Groeseneken, Guido, Jurczak, Malgorzata

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 696 KB

english, 2013

18

Hydrazine-Based Fermi-Level Depinning Process on Metal/Germanium Schottky Junction

Jung, Hyun-Wook, Jung, Woo-Shik, Park, Jin-Hong

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 508 KB

english, 2013

19

Enhancement of Open-circuit Voltage Using CF4 Plasma Treatment on Nitric Acid Oxides

Lin, Je-Wei, Wu, Chien-Hung, Wu, Sheng-Wei, Hseih, Wei-Ping, Du, Chen-Hsu, Chao, Tien-Sheng

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 396 KB

english, 2013

20

Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

Chang, Kuan-Chang, Pan, Chih-Hung, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Lou, Jen-Chung, Young, Tai-Fa, Chen, Jung-Hui, Shih, Chih-Cheng, Chu, Tian-Jian, Chen, Jian-Yu, Su, Yu-Ting, Jiang,

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 553 KB

english, 2013

21

Plasma Damage Mechanism of Electron Beam Curing Process for Spin on Dielectrics

Pyo, Sung Gyu, Kim, Sibum

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 274 KB

english, 2013

22

Impact of Using Double-Patterning Versus Single-Patterning on Threshold Voltage $(V_{\rm TH})$ Variation in Quasi-Planar Tri-Gate Bulk MOSFETs

Shin, Changhwan, Park, In Jun

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 414 KB

english, 2013

23

Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs

Gu, Jiangjiang J., Wang, Xinwei, Wu, Heng, Gordon, Roy G., Ye, Peide D.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

24

Bias-Stress-Induced Instabilities in P-Type ${\rm Cu}_{2}{\rm O}$ Thin-Film Transistors

Park, Ick-Joon, Jeong, Chan-Yong, U, Myeonghun, Song, Sang-Hun, Cho, In-Tak, Lee, Jong-Ho, Cho, Eou-Sik, Kwon, Hyuck-In

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 521 KB

english, 2013

25

A Surface-Plasmon-Enhanced Silicon Solar Cell With KOH-Etched Pyramid Structure

Hwang, Jun-Dar, Hsieh, Don-Ru

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 365 KB

english, 2013

26

Realization of Low Driving Voltage in Organic Light-Emitting Diodes Using C60 as an Electron Transport Layer and Alq3 as a Buffer Layer

Wu, Xiao Ming, Mu, Xue, Hua, Yu Lin, Bai, Juan Juan, Wang, Li, Xiao, Zhi Hui, Dong, Ni, Yin, Shou Gen

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 473 KB

english, 2013

27

Field Emitter Equipped With a Suppressor to Control Emission Angle

Koike, Akifumi, Neo, Youichirou, Mimura, Hidenori, Murata, Hidekazu, Yoshida, Tomoya, Nishi, Takashi, Nagao, Masayoshi

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 1.09 MB

english, 2013

28

Performance Enhancement on p-Channel Charge-Trapping Flash Memory Device With Epitaxial Si/Ge Super-Lattice Channel

Liu, Li-Jung, Chang-Liao, Kuei-Shu, Jian, Yi-Chuen, Cheng, Jen-Wei, Wang, Tien-Ko, Tsai, Ming-Jinn

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 303 KB

english, 2013

29

A Latchup-Immune and Robust SCR Device for ESD Protection in 0.25-μm 5-V CMOS Process

Huang, Yu-Ching, Ker, Ming-Dou

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 330 KB

english, 2013

30

Novel Silicon Photomultiplier With Vertical Bulk-Si Quenching Resistors

Sun, Fei, Duan, Ning, Lo, Guo-Qiang

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 541 KB

english, 2013

31

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

Chang, Kuan-Chang, Zhang, Rui, Chang, Ting-Chang, Tsai, Tsung-Ming, Lou, J. C., Chen, Jung-Hui, Young, Tai-Fa, Chen, Min-Chen, Yang, Ya-Liang, Pan, Yin-Chih, Chang, Geng-Wei, Chu, Tian-Jian, Shih, Chi

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 457 KB

english, 2013

32

Wafer-Level Fabrication of a Fused-Quartz Double-Ended Tuning Fork Resonator Oscillator Using Quartz-on-Quartz Direct Bonding

Song, Eun-Seok, Kang, Sungmuk, Kim, Hoseong, Kim, Yong-Kweon, An, Jun-Eon, Baek, Chang-Wook

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 500 KB

english, 2013

33

Terahertz Continuous Wave Detection Using Weakly Ionized Plasma in Inert Gases

Hou, Lei, Shi, Wei, Chen, Suguo, Yan, Zhijin

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 210 KB

english, 2013

34

Modeling the Impact of Reset Depth on Vacancy-Induced Filament Perturbations in ${\rm HfO}_{2}$ RRAM

Raghavan, Nagarajan, Degraeve, Robin, Fantini, Andrea, Goux, Ludovic, Wouters, Dirk J., Groeseneken, Guido, Jurczak, Malgorzata

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 558 KB

english, 2013

35

Charge Transport and Degradation in HfO2 and HfOx Dielectrics

Padovani, Andrea, Larcher, Luca, Bersuker, Gennadi, Pavan, Paolo

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 928 KB

english, 2013

36

Unified Subthreshold Coupling Factor Technique for Surface Potential and Subgap Density-of-States in Amorphous Thin Film Transistors

Jun, Sungwoo, Jo, Chunhyung, Bae, Hagyoul, Choi, Hyunjun, Kim, Dae Hwan, Kim, Dong Myong

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 495 KB

english, 2013

37

Improved NBTI reliability with sub-1-nanometer EOT ZrO2 gate dielectric compared with HfO2

Cho, Moonju, Kaczer, Ben, Kauerauf, Thomas, Ragnarsson, Lars-Ake, Groeseneken, Guido

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 478 KB

english, 2013

38

Sealing Bump With Bottom-Up Cu TSV Plating Fabrication in 3-D Integration Scheme

Chiang, Cheng-Hao, Kuo, Li-Min, Hu, Yu-Chen, Huang, Wen-Chun, Ko, Cheng-Ta, Chen, Kuan-Neng

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 649 KB

english, 2013

39

Meyer–Neldel Rule for Effective Channel Mobility in the Subthreshold Region of Poly-Si Thin-Film Transistors

Zhou, Xiaoliang, Wang, Mingxiang

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 531 KB

english, 2013

40

Enhanced Charge Transfer of QDs/Polymer Hybrid LED by Interface Controlling

Kang, Byoung-Ho, Lee, Sang-Won, Lim, Sung-Woo, You, Tae-Yang, Yeom, Se-Hyuk, Kim, Kyu-Jin, Kwon, Dae-Hyuk, Kang, Shin-Won

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 438 KB

english, 2013

41

Emitter Size Effect in GaAsSb-Based DHBTs With AlInP and GaInP Emitters

Lovblom, Rickard, Fluckiger, Ralf, Ostinelli, Olivier, Alexandrova, Maria, Bolognesi, C. R.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 386 KB

english, 2013

42

Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation

Li, Zhiqiang, An, Xia, Li, Min, Yun, Quanxin, Lin, Meng, Li, Ming, Zhang, Xing, Huang, Ru

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 1.50 MB

english, 2013

43

Statistical Interactions of Multiple Oxide Traps Under BTI Stress of Nanoscale MOSFETs

Markov, Stanislav, Amoroso, Salvatore Maria, Gerrer, Louis, Adamu-Lema, Fikru, Asenov, Asen

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 764 KB

english, 2013

44

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

Long, Shibing, Lian, Xiaojuan, Ye, Tianchun, Cagli, Carlo, Perniola, Luca, Miranda, Enrique, Liu, Ming, Sune, Jordi

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 602 KB

english, 2013

45

High-Speed GaN-Based Blue Light-Emitting Diodes With Gallium-Doped ZnO Current Spreading Layer

Liao, Chien-Lan, Chang, Yung-Fu, Ho, Chong-Lung, Wu, Meng-Chyi

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 467 KB

english, 2013

46

Special issue on advanced FET compact models for future technology generations

Journal:

IEEE Electron Device Letters

Year:

2013

File:

PDF, 309 KB

2013

47

Special issue on vacuum electronic devices

Journal:

IEEE Electron Device Letters

Year:

2013

File:

PDF, 234 KB

2013

48

IEEE Electron Device Letters information for authors

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 111 KB

english, 2013

49

IEEE Electron Devices Society Meetings Calendar (As of 3/29/2013)

Journal:

IEEE Electron Device Letters

Year:

2013

File:

PDF, 1.11 MB

2013

50

[Blank page - back cover]

Journal:

IEEE Electron Device Letters

Year:

2013

File:

PDF, 5 KB

2013

51

IEEE Electron Device Letters publication information

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 149 KB

english, 2013

52

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 166 KB

english, 2013

53

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 166 KB

english, 2013

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