A high efficient 820 nm MOS Ge quantum dot photodetector

IEEE Electron Device Letters 2003 / 05 Vol. 24; Iss. 5

A high efficient 820 nm MOS Ge quantum dot photodetector

Hsu, B.-C., Chang, S.T., Chen, T.-C., Kuo, P.-S., Chen, P.S., Pei, Z., Liu, C.W.
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Volume:
24
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2003.812558
Date:
May, 2003
File:
PDF, 234 KB
english, 2003
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