A new method for the extraction of flat-band voltage and...

Solid-State Electronics 2013 / 3 Vol. 81

A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors

Jeon, D.-Y., Park, S.J., Mouis, M., Barraud, S., Kim, G.-T., Ghibaudo, G.
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Volume:
81
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2012.11.011
Date:
March, 2013
File:
PDF, 1.21 MB
english, 2013
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