Volume 81

Solid-State Electronics

Volume 81

1

Characterization and modeling of low frequency noise in CMOS inverters

Ioannidis, E.G., Haendler, S., Dimitriadis, C.A., Ghibaudo, G.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 539 KB

english, 2013

2

Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Shtepliuk, I., Khranovskyy, V., Lashkarev, G., Khomyak, V., Lazorenko, V., Ievtushenko, A., Syväjärvi, M., Jokubavicius, V., Yakimova, R.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.05 MB

english, 2013

3

Temperature dependent compact modeling of gate tunneling leakage current in double gate MOSFETs

Darbandy, Ghader, Aghassi, Jasmin, Sedlmeir, Josef, Monga, Udit, Garduño, Ivan, Cerdeira, Antonio, Iñiguez, Benjamin

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 547 KB

english, 2013

4

The effect of different dicing methods on the leakage currents of n-type silicon diodes and strip sensors

Christophersen, M., Fadeyev, V., Ely, S., Phlips, B.F., Sadrozinski, H.F.-W.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 892 KB

english, 2013

5

A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors

Jeon, D.-Y., Park, S.J., Mouis, M., Barraud, S., Kim, G.-T., Ghibaudo, G.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.21 MB

english, 2013

6

An improved model for InP/InGaAs double heterojunction bipolar transistors

Shi, Yuxia, Jin, Zhi, Su, Yongbo, Cao, Yuxiong, Wang, Yan

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.39 MB

english, 2013

7

Improved empirical non-linear compact model for studying intermodulation in HEMTs and LDMOSFETs

Sadi, Toufik, Schwierz, Frank

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.09 MB

english, 2013

8

Effects of the solvent polarity of a polymeric insulator on field-effect mobility in an organic thin-film transistor

Kim, Hyeok, Bae, Jin-Hyuk, Horowitz, Gilles, Kim, Woo Young, Choi, Yoonseuk

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 646 KB

english, 2013

9

Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Jeon, Dae-Young, Park, So Jeong, Mouis, Mireille, Barraud, Sylvain, Kim, Gyu-Tae, Ghibaudo, Gérard

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 880 KB

english, 2013

10

Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Jeon, Dae-Young, Park, So Jeong, Mouis, Mireille, Barraud, Sylvain, Kim, Gyu-Tae, Ghibaudo, Gérard

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 779 KB

english, 2013

11

Measurement of effective carrier lifetime at the semiconductor–dielectric interface by Photoconductive Decay (PCD) Method

Drummond, P.J., Bhatia, D., Ruzyllo, J.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 499 KB

english, 2013

12

Numerical simulation and characterization of trapping noise in InGaP–GaAs heterojunctions devices at high injection

Nallatamby, Jean-Christophe, Abdelhadi, Khaled, Jacquet, Jean-Claude, Prigent, Michel, Floriot, Didier, Delage, Sylvain, Obregon, Juan

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 2.15 MB

english, 2013

13

Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation

Ioannou-Sougleridis, Vassilios, Poulakis, Nikolaos, Dimitrakis, Panagiotis, Normand, Pascal, Patsis, George P., Dimoulas, Athanasios, Simoen, Eddy

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.38 MB

english, 2013

14

×10 Fast write, 80% energy saving temperature controlling set method for multi-level cell phase change memories to solve the scaling blockade

Johguchi, Koh, Shintani, Toshimichi, Morikawa, Takahiro, Yoshioka, Kazuaki, Takeuchi, Ken

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.40 MB

english, 2013

15

Effect of two yellow delta-emitting layers on device performance of phosphorescent white organic light-emitting devices

Zhao, Juan, Yu, Junsheng, Wang, Xiao, Zhang, Lei

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 623 KB

english, 2013

16

Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric

Tsui, Bing-Yue, Su, Ting-Ting, Shew, Bor-Yuan, Huang, Yang-Tung

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 912 KB

english, 2013

17

Design of emitter ledge for thermal stability of AlGaAs/GaAs heterojunction bipolar transistors

Lim, H.W., Baek, C.H., Kang, B.K.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 378 KB

english, 2013

18

Study of charge trapping characteristics of SONOS with various trapping layers using gate-sensing and channel-sensing (GSCS) method

Liao, Jeng-Hwa, Lin, Hsing-Ju, Lue, Hang-Ting, Du, Pei-Ying, Hsieh, Jung-Yu, Yang, Ling-Wu, Yang, Tahone, Chen, Kuang-Chao, Lu, Chih-Yuan

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.55 MB

english, 2013

19

Comparison between TCAD simulated and measured carrier lifetimes in CMOS photodiodes using the Open Circuit Voltage Decay method

Marcelot, O., Magnan, P.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 549 KB

english, 2013

20

MOSFET gate dimension dependent drain and source leakage modeling by standard SPICE models

Paňko, Václav, Banáš, Stanislav, Prejda, Dušan, Dobeš, Josef

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.81 MB

english, 2013

21

Solution based-spin cast processed organic bistable memory device

Ramana, CH.V.V., Moodley, M.K., Kannan, V., Maity, A.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 572 KB

english, 2013

22

Transfer-free grown bilayer graphene transistors for digital applications

Wessely, Pia Juliane, Wessely, Frank, Birinci, Emrah, Riedinger, Bernadette, Schwalke, Udo

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.36 MB

english, 2013

23

Editorial Board

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 62 KB

english, 2013

24

Effects of post-oxidation on leakage current of high-voltage AlGaN/GaN Schottky barrier diodes on Si(111) substrates

Ha, Min-Woo, Han, Min-Koo, Hahn, Cheol-Koo

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 553 KB

english, 2013

25

A high speed asymmetric T-shape cell in NMOS-selected phase change memory chip

Wang, J.H., Zhou, J., Zhou, W.L., Tong, H., Huang, D.Q., Sun, J.J., Zhang, L., Long, X.M., Chen, Y., Qu, L.W., Miao, X.S.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.45 MB

english, 2013

26

High efficiency and high power continuous-wave semiconductor terahertz lasers at ∼3.1THz

Liu, Junqi, Chen, Jianyan, Wang, Tao, Li, Yanfang, Liu, Fengqi, Li, Lu, Wang, Lijun, Wang, Zhanguo

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 807 KB

english, 2013

27

Analysis of temperature effect on a-Si:H thin film transistors

Qiang, L., Yao, R.H.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 473 KB

english, 2013

28

Off-state avalanche-breakdown-induced on-resistance degradation in SGO–NLDMOS

Zhang, Shifeng, Han, Yan, Ding, Koubao, Hu, Jiaxian, Zhang, Bin, Zhang, Wei, Wu, Huanting

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.09 MB

english, 2013

29

Effects of geometry parameters of NTFET devices on the I–V measurements

Justino, Celine I.L., Rocha-Santos, Teresa A.P., Amaral, José P., Cardoso, Susana, Duarte, Armando C.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 228 KB

english, 2013

30

Analytical modeling of surface accumulation behavior of fully depleted SOI four gate transistors (G4-FETs)

Sayed, Shehrin, Khan, M. Ziaur Rahman

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 775 KB

english, 2013

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