Atomic force microscopy growth modeling of SiC buffer...

Atomic force microscopy growth modeling of SiC buffer layers on Si(100) and quality optimization

Ferro, G., Monteil, Y., Vincent, H., Thevenot, V., Tran, Min Duc, Cauwet, F., Bouix, J.
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Volume:
80
Year:
1996
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.363453
File:
PDF, 2.24 MB
english, 1996
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