Volume 80; Issue 8

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Journal of Applied Physics
Volume 80; Issue 8

Journal of Applied Physics

Volume 80; Issue 8

1

Electrical conduction in platinum–gallium nitride Schottky diodes

Suzue, K., Mohammad, S. N., Fan, Z. F., Kim, W., Aktas, O., Botchkarev, A. E., Morkoc, H.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 453 KB

english, 1996

2

Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctions

Walter, T., Herberholz, R., Muller, C., Schock, H. W.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 513 KB

english, 1996

3

Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices

Grieshaber, W., Schubert, E. F., Goepfert, I. D., Karlicek, R. F., Schurman, M. J., Tran, C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 382 KB

english, 1996

4

Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition

Turnbull, D. A., Li, X., Gu, S. Q., Reuter, E. E., Coleman, J. J., Bishop, S. G.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 483 KB

english, 1996

5

Voltage offsets and imprint mechanism in SrBi2Ta2O9 thin films

Al‐Shareef, H. N., Dimos, D., Warren, W. L., Tuttle, B. A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 357 KB

english, 1996

6

Efficient dye‐sensitized charge separation in a wide‐band‐gap p‐n heterojunction

ORegan, Brian, Schwartz, Daniel T.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 388 KB

english, 1996

7

Dynamic behavior of quantum cellular automata

Tougaw, P. Douglas, Lent, Craig S.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 522 KB

english, 1996

8

Effective interband g factors in diluted magnetic semiconductor Cd1-xFexTe

Wang, Xuezhong, Chen, Chenjia, Liu, Anwen, Wang, Rongming, Ma, Kejun

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 343 KB

english, 1996

9

Complex effective permittivity of a lossy composite material

Sareni, B., KraÌhenbuÌhl, L., Beroual, A., Brosseau, C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 395 KB

english, 1996

10

Hole transport properties of bulk zinc-blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

OgÌuzman, IÌsmail H., KolniÌk, JaÌn, Brennan, Kevin F., Wang, Rongping, Fang, Tzu-Ning, Ruden, P. Paul

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 155 KB

english, 1996

11

Atomic force microscopy growth modeling of SiC buffer layers on Si(100) and quality optimization

Ferro, G., Monteil, Y., Vincent, H., Thevenot, V., Tran, Min Duc, Cauwet, F., Bouix, J.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 2.24 MB

english, 1996

12

Thermodynamic equation of state and application to Hugoniot predictions for porous materials

Wu, Qiang, Jing, Fuqian

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 385 KB

english, 1996

13

Temperature dependence of the refractive index of direct band gap semiconductors near the absorption threshold: Application to GaAs

Tanguy, Christian

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 378 KB

english, 1996

14

Properties of single crystalline semiconducting CoSb3

Caillat, T., Borshchevsky, A., Fleurial, J.-P.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 438 KB

english, 1996

15

Coupled plasmonâLO-phonon modes in GaInAs quantum wires

Mutluay, N., Tanatar, B.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 349 KB

english, 1996

16

Grain size effect on ferro-antiferromagnetic coupling of NiFe/FeMn systems

Nishioka, Koichi, Hou, Chunghong, Fujiwara, Hideo, Metzger, Robert D.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 3.61 MB

english, 1996

17

Metal surface nitriding by laser induced plasma

A. L. Thomann, C. Boulmer-leborgne, C. Andreazza-vignolle, P. Andreazza, J. Hermann, G. Blondiaux

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 567 KB

english, 1996

18

DX-like center generated by uniaxial strains of screw dislocations in CdS

Istratov, A. A., Vyvenko, O. F.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 360 KB

english, 1996

19

Fluorescence and photoelectrochemical behavior of chlorophyll a adsorbed on a nanocrystalline SnO2 film

I. Bedja, P. V. Kamat, S. Hotchandani

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 393 KB

english, 1996

20

Electroluminescence from polyurethanes with emissive and charge-transporting chromophores and their blends

Kim, Dong Uk, Tsutsui, Tetsuo

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 234 KB

english, 1996

21

Picosecond spectral hole burning in ZnCdTe layers

Benhmida, M., Netiksis, V., Robino, M., Grun, J.-B., Petrauskas, M., Hönerlage, B.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 371 KB

english, 1996

22

Lateral damage extension during masked ion implantation into GaAs

Faye, M. M., Vieu, C., Assayag, G. Ben, Salles, Ph., Claverie, A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 594 KB

english, 1996

23

Structural ordering in InGaAs/GaAs superlattices

Ming, Z. H., Soo, Y. L., Huang, S., Kao, Y. H., Stair, K., Devane, G., Choi-Feng, C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 314 KB

english, 1996

24

Solid phase epitaxy of diamond cubic SnxGe1−x alloys

Taylor, M. E., He, G., Atwater, Harry A., Polman, A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 486 KB

english, 1996

25

Hydrogen evolution from strained SixGe1−x(100)2×1:H surfaces

Ku, Ja-Hum, Nemanich, R. J.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 388 KB

english, 1996

26

A transmission electron microscopy study of microstructural defects in proton implanted silicon

Gao, Min, Duan, X. F., Li, Jianming, Wang, Fenglian

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 598 KB

english, 1996

27

Effects of hydrogen addition on C44 and ultrasonic attenuation of vanadium single crystals

Kojima, H., Sanada, T., Koike, S.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 412 KB

english, 1996

28

High-frequency, transient magnetic susceptibility of ferroelectrics

Grimes, Craig A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 332 KB

english, 1996

29

Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes

Reinacher, N. M., Brandt, M. S., Stutzmann, M.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 369 KB

english, 1996

30

Nanostructure of giant magnetoresistive oxide film Nd2/3Sr1/3MnO3 by scanning tunneling microscopy

Ramaswamy, Geetha, Raychaudhuri, A. K.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 669 KB

english, 1996

31

Photoluminescence observations in band-gap tailored InGaAlAs epilayers lattice matched to InP substrate

Chua, S. J., Ramam, A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 319 KB

english, 1996

32

Magnetism and structure of Dy/Fe multilayers studied by 57Fe and 161Dy Mössbauer spectroscopy

Tappert, J., Keune, W., Brand, R. A., Vulliet, P., Sanchez, J.-P., Shinjo, T.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 425 KB

english, 1996

33

An analytic model for the polymer grid triode

McElvain, J., Heeger, A. J.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 712 KB

english, 1996

34

Transient processes in an Ar+I2 dc discharge

Fernández Palop, J. I., Ballesteros, J., Colomer, V., Hernández, M. A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 418 KB

english, 1996

35

Efficiency and thermal stability of Pt gettering in crystalline Si

Cacciato, A., Camalleri, C. M., Franco, G., Raineri, V., Coffa, S.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 500 KB

english, 1996

36

Optical and magneto-optical properties of NdTbFeCo thin films

Peng, Chubing, Kim, W. M., Cheong, Byung-ki, Lee, S. K., Kim, S. G.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 339 KB

english, 1996

37

Temperature dependence of galvanomagnetic properties for Er-doped and undoped n-type InSe

Yildirim, M., Gürbulak, B., Abay, B., Efeoğlu, H., Tüzemen, S., Yoğurtçu, Y. K.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 338 KB

english, 1996

38

Depth dependence of ion implantation damage in AlxGa1−xAs/GaAs heterostructures

Turkot, B. A., Lagow, B. W., Robertson, I. M., Forbes, D. V., Coleman, J. J., Rehn, L. E., Baldo, P. M.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 664 KB

english, 1996

39

Superconductor–insulator–superconductor tunnel strip line: Features and applications

Belitsky, V. Yu., Kollberg, E. L.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 465 KB

english, 1996

40

The use of carbides as electrode material in a pseudospark switch

Görtler, A., Schwandner, A., Frank, K., Christiansen, J.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 2.26 MB

english, 1996

41

Emittance tailoring of electron beams for propagation in dense gas

Myers, M. C., Fernsler, R. F., Meger, R. A., Antoniades, J. A., Murphy, D. P., Hubbard, R. F.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 1.05 MB

english, 1996

42

The effect of arsenic overpressure on the structural properties GaAs grown at low temperature

Lagadas, M., Hatzopoulos, Z., Tsagaraki, K., Calamiotou, M., Lioutas, C., Christou, A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 484 KB

english, 1996

43

Double critical temperature characteristics of semiconducting (Ba0.7Pb0.3)TiO3 materials prepared by microwave sintering

Chang, Horng-Yi, Liu, Kuo-Shung, Hu, Chen-Ti, Lin, Tsai-Fa, Lin, I-Nan

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 589 KB

english, 1996

44

Metastable states of Si donors in AlxGa1−xAs

Jia, Y. B., Grimmeiss, H. G.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 330 KB

english, 1996

45

B-doped fully strained Si1−xGex layers grown on Si(001) by gas-source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6: Charge transport properties

Lu, Q., Sardela, M. R., Bramblett, T. R., Greene, J. E.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 448 KB

english, 1996

46

Electron tunneling from the edge of thin single-crystal Si layers through SiO2 film

Ono, Yukinori, Takahashi, Yasuo, Horiguchi, Seiji, Murase, Katsumi, Tabe, Michiharu

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 544 KB

english, 1996

47

Screening effects on the degree of ionization and hole mobility for p-type Si and Ge

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 329 KB

english, 1996

48

Determination of the quasi-Fermi-level separation in single-quantum-well p-i-n diodes

Tsui, Ernest, Nelson, Jenny, Barnham, Keith, Button, Chris, Roberts, John S.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 370 KB

english, 1996

49

Characterization of traps in GaAs/W Schottky diodes by optical and electrical deep-level transient spectroscopy methods

Takanashi, Yoshifumi

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 372 KB

english, 1996

50

Determination of densities and mobilities of heavy and light holes in p-type Si using reduced-conductivity-tensor analyses of magnetic-field-dependent Hall and resistivity measurements

Kim, J. S., Seiler, D. G., Ehrstein, J. R.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 327 KB

english, 1996

51

Red shifting the intersubband response of quantum-well infrared photodetectors by thermal annealing

Malin, J. I., Liu, P., Sengupta, D. K., Fang, W. C., Chuang, S. L., Feng, M., Stillman, G. E., Hsieh, K. C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 343 KB

english, 1996

52

Structural, magnetic, and magnetotransport properties of NiFe/Ag as-deposited multilayers for variable NiFe and Ag layer thickness

Christides, C., Stavroyiannis, S., Niarchos, D.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 421 KB

english, 1996

53

Use of an active wire Bθ cell for electron beam conditioning

Murphy, D. P., Myers, M. C., Weidman, D. J., Antoniades, J. A., Fernsler, R. F., Meger, R. A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 719 KB

english, 1996

54

Mechanical stress power measurements during high-power laser ablation

Shannon, Mark A., Rubinsky, Boris, Russo, Richard E.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 420 KB

english, 1996

55

Giant magnetoresistance and phase decomposition of Fe–XCr–Co (WFe/WCo=1) thin film granular alloys

Chang, H. C., Chang, Y. H., Yao, S. Y.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 603 KB

english, 1996

56

Preparation of hydrogenated amorphous germanium nitrogen alloys by plasma enhanced chemical vapor deposition

Xu, Jun, Chen, Kunji, Feng, Duan, Miyazaki, Seiichi, Hirose, Masataka

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 340 KB

english, 1996

57

Deep level defects in GaAs on Si substrates grown by atomic hydrogen-assisted molecular beam epitaxy

Okada, Yoshitaka, Harris, James S., Götz, Werner

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 318 KB

english, 1996

58

Focused bulk ultrasonic waves generated by ring-shaped laser illumination and application to flaw detection

Wang, Xiao, Littman, Michael G., McManus, John B., Tadi, Mohsen, Kim, Young Sik, Askar, Attila, Rabitz, Herschel

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 449 KB

english, 1996

59

Diffusion-limited layer growth in spherical geometry: A numerical approach

Costa, L., Vilar, R.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 342 KB

english, 1996

60

Study of positron yield of W(100) single crystalline foil with in situ surface characterization

Amarendra, G., Canter, K. F., Schoepf, D. C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 333 KB

english, 1996

61

Perturbative analytical solution of two-wave coupling in photorefractive materials at large modulation depth

Zhou, Zhongxiang, Li, Yan, Sun, Xiudong, Jiang, Yongyuan, Zhao, Hua, Xu, Kebin, Wan, Qiuyu

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 402 KB

english, 1996

62

Effect of ion energy on the optical and structural properties of SiO2 grown by plasma-enhanced chemical-vapor deposition

Durandet, A., McKenzie, D. R.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 723 KB

english, 1996

63

Electron irradiation-induced changes in the surface topography of silicon dioxide

Stevens Kalceff, M. A., Phillips, M. R., Moon, A. R.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 1.09 MB

english, 1996

64

Failure in a shocked high-density glass

Bourne, N. K., Millett, J. C. F., Rosenberg, Z.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 338 KB

english, 1996

65

Ultrafast dynamics of excited-state absorption in V3+:YAG crystal

Yumashev, K. V., Kuleshov, N. V., Malyarevich, A. M., Prokoshin, P. V., Shcherbitsky, V. G., Posnov, N. N., Mikhailov, V. P., Sandulenko, V. A.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 353 KB

english, 1996

66

Regrowth of the photoquenchable defect relating to the hopping conduction in arsenic-ion-implanted semi-insulating GaAs

Kuriyama, K., Kazama, K., Kato, Takashi, Yamamoto, S., Aoki, Y., Naramoto, H.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 326 KB

english, 1996

67

Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy

Shi, X. H., Liu, P. L., Shen, S. C., Chen, J. X., Xin, H. P., Li, A. Z.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 337 KB

english, 1996

68

Lattice instability at a fast moving crack tip

Zhang, Y. W., Wang, T. C.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 368 KB

english, 1996

69

Anomalous magnetic behavior in the grain aligned HgBa2Ca2Cu3O8+δ superconductor

Kim, Gun Cheol, Kim, Young Cheol

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 306 KB

english, 1996

70

Sulphur diffusion at the Si/GaAs(110) interface

Xia, H., Lennard, W. N., Huang, L. J., Lau, W. M., Baribeau, J.-M., Landheer, D.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 301 KB

english, 1996

71

Electrical properties of layer semiconductor p-GaSe doped with Cu

Shigetomi, S., Ikari, T., Nakashima, H.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 286 KB

english, 1996

72

Chemical synthesis, microstructure, and magnetic properties of chains composed of ultrafine Fe–Co–B particles

L. Zhang, A. Manthiram

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 605 KB

english, 1996