Microscopy study of the conductive filament in HfO2...

Microelectronic Engineering 2013 / 09 Vol. 109

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

Privitera, S., Bersuker, G., Butcher, B., Kalantarian, A., Lombardo, S., Bongiorno, C., Geer, R., Gilmer, D.C., Kirsch, P.D.
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Volume:
109
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2013.03.145
Date:
September, 2013
File:
PDF, 1.22 MB
english, 2013
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