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Volume 109
Main
Microelectronic Engineering
Volume 109
Microelectronic Engineering
Volume 109
1
Multilevel resistive switching in ternary HfxAl1−xOy oxide with graded Al depth profile
Markeev, A.
,
Chouprik, A.
,
Egorov, K.
,
Lebedinskii, Yu.
,
Zenkevich, A.
,
Orlov, O.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.12 MB
Your tags:
english, 2013
2
The behaviour of oxygen at metal electrodes in HfO2 based resistive switching devices
Bradley, Samuel R.
,
McKenna, Keith P.
,
Shluger, Alexander L.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.02 MB
Your tags:
english, 2013
3
Electronic structure of oxygen vacancies in hafnium oxide
Perevalov, T.V.
,
Aliev, V.Sh.
,
Gritsenko, V.A.
,
Saraev, A.A.
,
Kaichev, V.V.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 308 KB
Your tags:
english, 2013
4
Zero interface dipole induced threshold voltage shift of HfO2/SiO2 gate dielectric stacks with NH3 plasma treatment
Wang, Jer-Chyi
,
Chen, Chia-Hsin
,
Liu, Hsiang-Yu
,
Lin, Chih-Ting
,
Lu, Hsin-Chun
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.11 MB
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english, 2013
5
X-ray and photoelectron spectroscopic nondestructive methods for thin films and interfaces study. Application to SrTiO3 based heterostuctures
Filatova, E.O.
,
Kozhevnikov, I.V.
,
Sokolov, A.A.
,
Yegorova, Yu V.
,
Konashuk, A.S.
,
Vilkov, O.Yu
,
Schaefers, F.
,
Gorgoi, M.
,
Shulakov, A.S.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 907 KB
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english, 2013
6
Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited HfTiOx nanolaminate
Chakrabarti, B.
,
Vogel, E.M.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.62 MB
Your tags:
english, 2013
7
Sheet resistance measurement on AlGaN/GaN wafers and dispersion study
Lehmann, J.
,
Leroux, C.
,
Charles, M.
,
Torres, A.
,
Morvan, E.
,
Blachier, D.
,
Ghibaudo, G.
,
Bano, E.
,
Reimbold, G.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 807 KB
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english, 2013
8
Resistive switching effect on Al2O3/InGaAs stacks
Palumbo, F.
,
Shekhter, P.
,
Krylov, I.
,
Ritter, D.
,
Eizenberg, M.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 475 KB
Your tags:
english, 2013
9
FinFETs with ONO BOX for multi-bit unified memory
Chang, Sung-Jae
,
Bawedin, Maryline
,
Xiong, Wade
,
Lee, Jong-Hyun
,
Lee, Jung-Hee
,
Cristoloveanu, Sorin
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.35 MB
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english, 2013
10
Modeling thermal effects in nano-devices
Vasileska, Dragica
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.28 MB
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english, 2013
11
A computational study of Si–H bonds as precursors for neutral
Ling, Sanliang
,
El-Sayed, Al-Moatasem
,
Lopez-Gejo, Francisco
,
Watkins, Matthew B.
,
Afanas’ev, V.V.
,
Shluger, Alexander L.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 979 KB
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english, 2013
12
Statistical insight into controlled forming and forming free stacks for HfOx RRAM
Raghavan, N.
,
Fantini, A.
,
Degraeve, R.
,
Roussel, P.J.
,
Goux, L.
,
Govoreanu, B.
,
Wouters, D.J.
,
Groeseneken, G.
,
Jurczak, M.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 785 KB
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english, 2013
13
Comparison of SiO2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTs
Wang, Cong
,
Cho, Sung-Jin
,
Kim, Nam-Young
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1006 KB
Your tags:
english, 2013
14
Mobility spectrum analysis of carrier transport at insulator/semiconductor interfaces
Umana-Membreno, G.A.
,
Antoszewski, J.
,
Faraone, L.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 387 KB
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english, 2013
15
Modeling, simulation and design of the vertical Graphene Base Transistor
Driussi, F.
,
Palestri, P.
,
Selmi, L.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 688 KB
Your tags:
english, 2013
16
Reduction of silicon dioxide interfacial layer to 4.6Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si
Nichau, A.
,
Schäfer, A.
,
Knoll, L.
,
Wirths, S.
,
Schram, T.
,
Ragnarsson, L.-Å.
,
Schubert, J.
,
Bernardy, P.
,
Luysberg, M.
,
Besmehn, A.
,
Breuer, U.
,
Buca, D.
,
Mantl, S.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 911 KB
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english, 2013
17
Investigation of oxide thin films deposited by atomic layer deposition as dopant source for ultra-shallow doping of silicon
Kalkofen, Bodo
,
Amusan, Akinwumi A.
,
Lisker, Marco
,
Burte, Edmund P.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 445 KB
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english, 2013
18
Microscopy study of the conductive filament in HfO2 resistive switching memory devices
Privitera, S.
,
Bersuker, G.
,
Butcher, B.
,
Kalantarian, A.
,
Lombardo, S.
,
Bongiorno, C.
,
Geer, R.
,
Gilmer, D.C.
,
Kirsch, P.D.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.22 MB
Your tags:
english, 2013
19
Barrier engineering for double layer CVD graphene tunnel FETs
Roy, T.
,
Hesabi, Z.R.
,
Joiner, C.A.
,
Fujimoto, A.
,
Vogel, E.M.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 679 KB
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english, 2013
20
The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures
Juan, P.C.
,
Liu, C.H.
,
Lin, C.L.
,
Mong, F.C.
,
Huang, J.H.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.37 MB
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english, 2013
21
Superior reliability of high mobility (Si)Ge channel pMOSFETs
Franco, J.
,
Kaczer, B.
,
Toledano-Luque, M.
,
Roussel, Ph.J.
,
Cho, M.
,
Kauerauf, T.
,
Mitard, J.
,
Eneman, G.
,
Witters, L.
,
Grasser, T.
,
Groeseneken, G.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.20 MB
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english, 2013
22
Defects at Ge/oxide and III–V/oxide interfaces
Van de Walle, C.G.
,
Choi, M.
,
Weber, J.R.
,
Lyons, J.L.
,
Janotti, A.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 546 KB
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english, 2013
23
Selector-less RRAM with non-linearity of device for cross-point array applications
Woo, Jiyong
,
Lee, Daeseok
,
Choi, Godeuni
,
Cha, Euijun
,
Kim, Seonghyun
,
Lee, Wootae
,
Park, Sangsu
,
Hwang, Hyunsang
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.17 MB
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english, 2013
24
Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics
Shubhakar, Kalya
,
Pey, Kin Leong
,
Raghavan, Nagarajan
,
Kushvaha, Sunil Singh
,
Bosman, Michel
,
Wang, Zhongrui
,
O’Shea, Sean Joseph
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 2.56 MB
Your tags:
english, 2013
25
Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling
Han, J.-H.
,
Zhang, R.
,
Osada, T.
,
Hata, M.
,
Takenaka, M.
,
Takagi, S.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 483 KB
Your tags:
english, 2013
26
Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices
Lee, Seok-Hee
,
Choi, Rino
,
Choi, Changhwan
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 695 KB
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english, 2013
27
Voltage dependences of parameter drifts in hot carrier degradation for n-channel LDMOS transistors
Shahabuddin, S.
,
Soin, N.
,
Goh, K.K.
,
Abdul Wahab, Y.
,
Hussin, H.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 900 KB
Your tags:
english, 2013
28
Novel multi-bit memory device using metal/PVDF–TrFE/graphene stack
Hwang, Hyeon Jun
,
Yang, Jin Ho
,
Kang, Soo Cheol
,
Cho, Chunhum
,
Kang, Chang Goo
,
Lee, Young Gon
,
Lee, Byoung Hun
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.03 MB
Your tags:
english, 2013
29
Understanding Ge impact on VT and VFB in Si1−xGex/Si pMOSFETs
Soussou, A.
,
Leroux, C.
,
Rideau, D.
,
Toffoli, A.
,
Romano, G.
,
Saxod, O.
,
Bidal, G.
,
Barge, D.
,
Pellissier-Tanon, D.
,
Abbate, F.
,
Tavernier, C.
,
Reimbold, G.
,
Ghibaudo, G.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 916 KB
Your tags:
english, 2013
30
Electronic structure of lanthanide oxide high K gate oxides
Gillen, R.
,
Robertson, J.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 458 KB
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english, 2013
31
Inside Front Cover - Editorial Board
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 29 KB
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english, 2013
32
Amphoteric defects in GaAs leading to Fermi-level pinning: A hybrid functional study
Colleoni, Davide
,
Pasquarello, Alfredo
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 902 KB
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english, 2013
33
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress
Meneghesso, G.
,
Meneghini, M.
,
Stocco, A.
,
Bisi, D.
,
de Santi, C.
,
Rossetto, I.
,
Zanandrea, A.
,
Rampazzo, F.
,
Zanoni, E.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 986 KB
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english, 2013
34
Electrically active interface defects in the In0.53Ga0.47As MOS system
Djara, V.
,
O’Regan, T.P.
,
Cherkaoui, K.
,
Schmidt, M.
,
Monaghan, S.
,
O’Connor, É.
,
Povey, I.M.
,
O’Connell, D.
,
Pemble, M.E.
,
Hurley, P.K.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.12 MB
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english, 2013
35
Stress induced leakage current generated by hot-hole injection
Teramoto, Akinobu
,
Park, Hyeonwoo
,
Inatsuka, Takuya
,
Kuroda, Rihito
,
Sugawa, Shigetoshi
,
Ohmi, Tadahiro
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 612 KB
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english, 2013
36
Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties
Hosoi, Takuji
,
Hideshima, Iori
,
Tanaka, Ryohei
,
Minoura, Yuya
,
Yoshigoe, Akitaka
,
Teraoka, Yuden
,
Shimura, Takayoshi
,
Watanabe, Heiji
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 729 KB
Your tags:
english, 2013
37
Analysis of metal insulator transitions in VO2 and V2O3 for RRAMs
Guo, Yuzheng
,
Robertson, John
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 357 KB
Your tags:
english, 2013
38
Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM
Lee, Daeseok
,
Woo, Jiyong
,
Cha, Euijun
,
Kim, Seonghyun
,
Lee, Wootae
,
Park, Sangsu
,
Hwang, Hyunsang
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.06 MB
Your tags:
english, 2013
39
Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structure
Jasiński, Jakub
,
Mazurak, Andrzej
,
Majkusiak, Bogdan
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.79 MB
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english, 2013
40
Defect densities inside the conductive filament of RRAMs
Robertson, J.
,
Gillen, R.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 630 KB
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english, 2013
41
Influence of La on the electrical properties of HfSiON: From diffusion to Vth shifts
Hackenberg, M.
,
Pichler, P.
,
Baudot, S.
,
Essa, Z.
,
Gro-Jean, M.
,
Tavernier, C.
,
Schamm-Chardon, S.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 679 KB
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english, 2013
42
Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation
Pampillón, María Ángela
,
Feijoo, Pedro Carlos
,
San Andrés, Enrique
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.25 MB
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english, 2013
43
Defect energy levels of the As–As dimer at InGaAs/oxide interfaces: A first principles study
Miceli, Giacomo
,
Pasquarello, Alfredo
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 777 KB
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english, 2013
44
Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices
Chen, Chien-Hung
,
Li, Yiming
,
Chen, Chieh-Yang
,
Chen, Yu-Yu
,
Hsu, Sheng-Chia
,
Huang, Wen-Tsung
,
Chu, Sheng-Yuan
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.08 MB
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english, 2013
45
Point defects in thermal GaAs/GaAs-oxide structures probed by electron paramagnetic resonance
Nguyen, S.
,
Stesmans, A.
,
Afanas’ev, V.V.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 362 KB
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english, 2013
46
Identification of intrinsic electron trapping sites in bulk amorphous silica from ab initio calculations
El-Sayed, Al-Moatasem
,
Watkins, Matthew B.
,
Shluger, Alexander L.
,
Afanas’ev, Valeri V.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 592 KB
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english, 2013
47
First demonstration of device-quality symmetric N-MOS and P-MOS capacitors on p-type and n-type crystalline Ge substrates
Lucovsky, G.
,
Kim, J.W.
,
Nordlund, D.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 735 KB
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english, 2013
48
Electron spin resonance analysis of sputtering-induced defects in advanced low-κ insulators (κ=2.0–2.5)
Stesmans, A.
,
Nguyen, A.P.D.
,
Houssa, M.
,
Afanas’ev, V.V.
,
Tőkei, Zs.
,
Baklanov, M.R.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 387 KB
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english, 2013
49
Author Index
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 192 KB
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english, 2013
50
Electron mobility in heavily doped junctionless nanowire SOI MOSFETs
Rudenko, T.
,
Nazarov, A.
,
Yu, R.
,
Barraud, S.
,
Cherkaoui, K.
,
Razavi, P.
,
Fagas, G.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 852 KB
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english, 2013
51
Charge trapping processes at memory window formation in single- and double nanocrystal layered NVMs
Ievtukh, V.
,
Nazarov, A.
,
Turchanikov, V.
,
Lysenko, V.
,
Nassiopoulou, A.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.67 MB
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english, 2013
52
Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown
Miranda, E.
,
Kawanago, T.
,
Kakushima, K.
,
Suñé, J.
,
Iwai, H.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 507 KB
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english, 2013
53
Identification of the (√E+1/E)-dependence of porous low-k time dependent dielectric breakdown using over one year long package level tests
Chery, E.
,
Federspiel, X.
,
Roy, D.
,
Volpi, F.
,
Chaix, J.-M.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 488 KB
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english, 2013
54
Stress induced defect generation implications of doping HfO2 with Al
O’Connor, R.
,
Kauerauf, T.
,
Arimura, H.
,
Ragnarsson, L.A.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.10 MB
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english, 2013
55
High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments
San Andrés, Enrique
,
Pampillón, María Ángela
,
Feijoo, Pedro Carlos
,
Pérez, Raúl
,
Cañadilla, Carmina
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.15 MB
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english, 2013
56
Preface
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 146 KB
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english, 2013
57
High-k gadolinium and aluminum scandates for hybrid floating gate NAND flash
Lisoni, Judit G.
,
Breuil, Laurent
,
Nyns, Laura
,
Blomme, Pieter
,
Van den bosch, Geert
,
Van Houdt, Jan
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 667 KB
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english, 2013
58
Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics
Lehmann, J.
,
Hübner, R.
,
Borany, J.V.
,
Skorupa, W.
,
Mikolajick, T.
,
Schäfer, A.
,
Schubert, J.
,
Mantl, S.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.41 MB
Your tags:
english, 2013
59
Gate-first n-MOSFET with a sub-0.6-nm EOT gate stack
Cheng, C.H.
,
Chou, K.I.
,
Chin, A.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 744 KB
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english, 2013
60
Chemical trends and passivation of defects at Al2O3:GaAs/InAs/InP/GaSb interfaces
Guo, Yuzheng
,
Robertson, John
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.75 MB
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english, 2013
61
Transformation of a metal–insulator-silicon structure into a resonant-tunneling diode
Kareva, G.G.
,
Vexler, M.I.
,
Illarionov, Yu.Yu.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 946 KB
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english, 2013
62
AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
Meunier, R.
,
Torres, A.
,
Morvan, E.
,
Charles, M.
,
Gaud, P.
,
Morancho, F.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1000 KB
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english, 2013
63
Epitaxial ferroelectric oxides on semiconductors- A route towards negative capacitance devices
Droopad, R.
,
Contreras-Guerrero, R.
,
Veazey, J.P.
,
Qiao, Q.
,
Klie, R.F.
,
Levy, J.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.05 MB
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english, 2013
64
Structural, ferroelectric, electronic and transport properties of BaTiO3/Pt heterostructures grown on MgO(001)
Minnekaev, M.
,
Bulakh, K.
,
Chouprik, A.
,
Drube, W.
,
Ershov, P.
,
Lebedinskii, Yu.
,
Maksimova, K.
,
Zenkevich, A.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.53 MB
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english, 2013
65
The race of phase change memories to nanoscale storage and applications
Lacaita, Andrea L.
,
Redaelli, Andrea
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1014 KB
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english, 2013
66
Optimized electrode and interface for enhanced reliability of high-k based metal–insulator–metal capacitors
Koch, Johannes
,
Seidel, Konrad
,
Weinreich, Wenke
,
Riedel, Stefan
,
Chiang, Jung-Chin
,
Beyer, Volkhard
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.10 MB
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67
Impact of dielectric crystallinity on the resistive switching characteristics of ZrTiOx-based metal–insulator-metal devices
Lin, Chia-Chun
,
Wu, Yung-Hsien
,
Hung, Tung-Hsuan
,
Hou, Chin-Yao
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.08 MB
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68
Gate current random telegraph noise and single defect conduction
Kaczer, B.
,
Toledano-Luque, M.
,
Goes, W.
,
Grasser, T.
,
Groeseneken, G.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 941 KB
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69
Investigation of MOSC conductance spectra by MPAS technique
Gutt, T.
,
Przewłocki, H.M.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.20 MB
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english, 2013
70
Ultrathin layer transfer technology for post-Si semiconductors
Maeda, Tatsuro
,
Ishii, Hiroyuki
,
Itatani, Taro
,
Mieda, Eiko
,
Jevasuwan, Wipakorn
,
Kurashima, Yuichi
,
Takagi, Hideki
,
Yasuda, Tetsuji
,
Takada, Tomoyuki
,
Yamamoto, Taketsugu
,
Aoki, Takeshi
,
Osada, Taken
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 755 KB
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71
Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces
Zhang, R.
,
Lin, J.C.
,
Yu, X.
,
Takenaka, M.
,
Takagi, S.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 711 KB
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72
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks
Chang, C.-Y.
,
Yokoyama, M.
,
Kim, S.-H.
,
Ichikawa, O.
,
Osada, T.
,
Hata, M.
,
Takenaka, M.
,
Takagi, S.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 771 KB
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73
The unexpected effects of crystallization on Ta2O5 as studied by HRTEM and C-AFM
Celano, Umberto
,
Chintala, Ravi Chandra
,
Adelmann, Christoph
,
Richard, Olivier
,
Vandervorst, Wilfried
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.10 MB
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74
Gate-last integration on planar FDSOI for low-VTp and low-EOT MOSFETs
Morvan, S.
,
Andrieu, F.
,
Leroux, C.
,
Garros, X.
,
Cassé, M.
,
Martin, F.
,
Gassilloud, R.
,
Morand, Y.
,
Le Royer, C.
,
Besson, P.
,
Roure, M.-C.
,
Euvrard, C.
,
Rivoire, M.
,
Seignard, A.
,
Desvoivres, L.
,
Barn
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 816 KB
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75
The intrinsic parameter fluctuation on high-κ/metal gate bulk FinFET devices
Li, Yiming
,
Su, Hsin-Wen
,
Chen, Yu-Yu
,
Hsu, Sheng-Chia
,
Huang, Wen-Tsung
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 2.58 MB
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76
Interface engineering of Ge using thulium oxide: Band line-up study
Mitrovic, I.Z.
,
Althobaiti, M.
,
Weerakkody, A.D.
,
Sedghi, N.
,
Hall, S.
,
Dhanak, V.R.
,
Chalker, P.R.
,
Henkel, C.
,
Dentoni Litta, E.
,
Hellström, P.-E.
,
Östling, M.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 748 KB
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english, 2013
77
Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
Mather, S.
,
Sedghi, N.
,
Althobaiti, M.
,
Mitrovic, I.Z.
,
Dhanak, V.
,
Chalker, P.R.
,
Hall, S.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 654 KB
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english, 2013
78
Ab initio validation of continuum models parametrizations for ultrascaled SOI interfaces
Biel, Blanca
,
Donetti, Luca
,
Godoy, Andres
,
Gámiz, Francisco
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1013 KB
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english, 2013
79
Control of metal/oxide electron barriers in CBRAM cells by low work-function liners
De Stefano, F.
,
Afanas’ev, V.V.
,
Houssa, M.
,
Stesmans, A.
,
Opsomer, K.
,
Jurczak, M.
,
Goux, L.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 395 KB
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80
Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures
Bae, Sung-Bum
,
Kim, Ki-Won
,
Lee, Yong Soo
,
Lee, Jung-Hee
,
Bae, Youngho
,
Cristoloveanu, Sorin
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 595 KB
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english, 2013
81
Charge trapping and electrical degradation in atomic layer deposited Al2O3 films
Gonzalez, M.B.
,
Rafí, J.M.
,
Beldarrain, O.
,
Zabala, M.
,
Campabadal, F.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.57 MB
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82
Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
Ma, J.
,
Zhang, J.F.
,
Ji, Z.
,
Benbakhti, B.
,
Duan, M.
,
Zhang, W.
,
Zheng, X.F.
,
Mitard, J.
,
Kaczer, B.
,
Groeseneken, G.
,
Hall, S.
,
Robertson, J.
,
Chalker, P.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 380 KB
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english, 2013
83
Effect of aluminum addition to solution-derived amorphous indium zinc oxide thin film for an oxide thin film transistors
Park, Sung Min
,
Lee, Dong Hee
,
Lim, You Sung
,
Kim, Dae Kuk
,
Yi, Moonsuk
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.28 MB
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english, 2013
84
Improved programming and erasing speeds of poly-Si flash memory device by HfO2/Si3N4 bandgap-engineered trapping layer
Chen, Chun-Yuan
,
Chang-Liao, Kuei-Shu
,
Ho, Hao-Wei
,
Wang, Tien-Ko
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.24 MB
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85
Table of Contents
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 167 KB
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english, 2013
86
MOSFET layout modifications for hump effect removal
Carmona, M.
,
Rebuffat, B.
,
Delalleau, J.
,
Gagliano, O.
,
Lopez, L.
,
Ogier, J.-L.
,
Goguenheim, D.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.01 MB
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english, 2013
87
Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si(100) substrate near the interface
Suwa, Tomoyuki
,
Teramoto, Akinobu
,
Nagata, Kohki
,
Ogura, Atsushi
,
Nohira, Hiroshi
,
Muro, Takayuki
,
Kinoshita, Toyohiko
,
Sugawa, Shigetoshi
,
Ohmi, Tadahiro
,
Hattori, Takeo
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 756 KB
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english, 2013
88
Analytical model for anomalous Positive Bias Temperature Instability in La-based HfO2 nFETs based on independent characterization of charging components
Toledano-Luque, M.
,
Kaczer, B.
,
Aoulaiche, M.
,
Spessot, A.
,
Roussel, Ph.J.
,
Ritzenthaler, R.
,
Schram, T.
,
Thean, A.
,
Groeseneken, G.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 2.26 MB
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english, 2013
89
RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application
de Andrade, Maria Glória Caño
,
Toledano-Luque, María
,
Fourati, Fatma
,
Degraeve, Robin
,
Martino, João Antonio
,
Claeys, Cor
,
Simoen, Eddy
,
Van den Bosch, Geert
,
Van Houdt, Jan
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 807 KB
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english, 2013
90
Construction of atomic-scale logic gates on a surface of hydrogen passivated germanium
Kolmer, Marek
,
Godlewski, Szymon
,
Lis, Jakub
,
Such, Bartosz
,
Kantorovich, Lev
,
Szymonski, Marek
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.49 MB
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english, 2013
91
Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition
Li, Chen-Chien
,
Chang-Liao, Kuei-Shu
,
Fu, Chung-Hao
,
Hsieh, Tsung-Lin
,
Chen, Li-Ting
,
Liao, Yu-Liang
,
Lu, Chun-Chang
,
Wang, Tien-Ko
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.16 MB
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english, 2013
92
Trap density characterization through low-frequency noise in junctionless transistors
Doria, Rodrigo Trevisoli
,
Trevisoli, Renan Doria
,
de Souza, Michelly
,
Pavanello, Marcelo Antonio
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1020 KB
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93
Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries
Iglesias, V.
,
Martin-Martinez, J.
,
Porti, M.
,
Rodriguez, R.
,
Nafria, M.
,
Aymerich, X.
,
Erlbacher, T.
,
Rommel, M.
,
Murakami, K.
,
Bauer, A.J.
,
Frey, L.
,
Bersuker, G.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 496 KB
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english, 2013
94
Epitaxial thin films of BaSrO as gate dielectric
Islam, S.
,
Müller-Sajak, D.
,
Hofmann, K.R.
,
Pfnür, H.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 479 KB
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english, 2013
95
Thermally activated analysis of LaSiOx/Si and GdSiOx/Si structures at cryogenic temperatures
Tyagulskii, I.P.
,
Tyagulskii, S.I.
,
Nazarov, A.N.
,
Lysenko, V.S.
,
Cherkaoui, K.
,
Hurley, P.K.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.01 MB
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english, 2013
96
Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties
Takagi, Shinichi
,
Zhang, Rui
,
Takenaka, Mitsuru
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.15 MB
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english, 2013
97
Si cap passivation for Ge nMOS applications
Sioncke, S.
,
Vanherle, W.
,
Art, W.
,
Ceuppens, J.
,
Ivanov, Ts.
,
Lin, D.
,
Nyns, L.
,
Delabie, A.
,
Conard, T.
,
Struyf, H.
,
De Gendt, S.
,
Caymax, M.
,
Collaert, N.
,
Thean, A.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.29 MB
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english, 2013
98
Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories
Juan, P.C.
,
Sun, C.L.
,
Liu, C.H.
,
Lin, C.L.
,
Mong, F.C.
,
Huang, J.H.
,
Chang, H.S.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.14 MB
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english, 2013
99
Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization
Tang, Baojun
,
Toledano-Luque, M.
,
Zhang, W.D.
,
Van den bosch, G.
,
Degraeve, R.
,
Zhang, J.F.
,
Van Houdt, J.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 838 KB
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english, 2013
100
Defects at Ge:GeO2 and Ge:MeOx interfaces
Li, H.
,
Robertson, J.
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 2.50 MB
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english, 2013
101
High quality Ge surface passivation layer formed by thermal oxidation of Y/Ge structure
Wu, Min-Lin
,
Wu, Yung-Hsien
,
Lyu, Rong-Jhe
,
Chao, Chun-Yen
,
Wu, Chao-Yi
,
Lin, Chia-Chun
,
Chen, Lun-Lun
Journal:
Microelectronic Engineering
Year:
2013
Language:
english
File:
PDF, 1.22 MB
Your tags:
english, 2013
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