Volume 109

Microelectronic Engineering

Volume 109

1

Multilevel resistive switching in ternary HfxAl1−xOy oxide with graded Al depth profile

Markeev, A., Chouprik, A., Egorov, K., Lebedinskii, Yu., Zenkevich, A., Orlov, O.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.12 MB

english, 2013

2

The behaviour of oxygen at metal electrodes in HfO2 based resistive switching devices

Bradley, Samuel R., McKenna, Keith P., Shluger, Alexander L.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.02 MB

english, 2013

3

Electronic structure of oxygen vacancies in hafnium oxide

Perevalov, T.V., Aliev, V.Sh., Gritsenko, V.A., Saraev, A.A., Kaichev, V.V.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 308 KB

english, 2013

4

Zero interface dipole induced threshold voltage shift of HfO2/SiO2 gate dielectric stacks with NH3 plasma treatment

Wang, Jer-Chyi, Chen, Chia-Hsin, Liu, Hsiang-Yu, Lin, Chih-Ting, Lu, Hsin-Chun

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

5

X-ray and photoelectron spectroscopic nondestructive methods for thin films and interfaces study. Application to SrTiO3 based heterostuctures

Filatova, E.O., Kozhevnikov, I.V., Sokolov, A.A., Yegorova, Yu V., Konashuk, A.S., Vilkov, O.Yu, Schaefers, F., Gorgoi, M., Shulakov, A.S.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 907 KB

english, 2013

6

Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited HfTiOx nanolaminate

Chakrabarti, B., Vogel, E.M.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.62 MB

english, 2013

7

Sheet resistance measurement on AlGaN/GaN wafers and dispersion study

Lehmann, J., Leroux, C., Charles, M., Torres, A., Morvan, E., Blachier, D., Ghibaudo, G., Bano, E., Reimbold, G.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 807 KB

english, 2013

8

Resistive switching effect on Al2O3/InGaAs stacks

Palumbo, F., Shekhter, P., Krylov, I., Ritter, D., Eizenberg, M.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 475 KB

english, 2013

9

FinFETs with ONO BOX for multi-bit unified memory

Chang, Sung-Jae, Bawedin, Maryline, Xiong, Wade, Lee, Jong-Hyun, Lee, Jung-Hee, Cristoloveanu, Sorin

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.35 MB

english, 2013

10

Modeling thermal effects in nano-devices

Vasileska, Dragica

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.28 MB

english, 2013

11

A computational study of Si–H bonds as precursors for neutral

Ling, Sanliang, El-Sayed, Al-Moatasem, Lopez-Gejo, Francisco, Watkins, Matthew B., Afanas’ev, V.V., Shluger, Alexander L.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 979 KB

english, 2013

12

Statistical insight into controlled forming and forming free stacks for HfOx RRAM

Raghavan, N., Fantini, A., Degraeve, R., Roussel, P.J., Goux, L., Govoreanu, B., Wouters, D.J., Groeseneken, G., Jurczak, M.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 785 KB

english, 2013

13

Comparison of SiO2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTs

Wang, Cong, Cho, Sung-Jin, Kim, Nam-Young

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1006 KB

english, 2013

14

Mobility spectrum analysis of carrier transport at insulator/semiconductor interfaces

Umana-Membreno, G.A., Antoszewski, J., Faraone, L.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 387 KB

english, 2013

15

Modeling, simulation and design of the vertical Graphene Base Transistor

Driussi, F., Palestri, P., Selmi, L.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 688 KB

english, 2013

16

Reduction of silicon dioxide interfacial layer to 4.6Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si

Nichau, A., Schäfer, A., Knoll, L., Wirths, S., Schram, T., Ragnarsson, L.-Å., Schubert, J., Bernardy, P., Luysberg, M., Besmehn, A., Breuer, U., Buca, D., Mantl, S.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 911 KB

english, 2013

17

Investigation of oxide thin films deposited by atomic layer deposition as dopant source for ultra-shallow doping of silicon

Kalkofen, Bodo, Amusan, Akinwumi A., Lisker, Marco, Burte, Edmund P.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 445 KB

english, 2013

18

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

Privitera, S., Bersuker, G., Butcher, B., Kalantarian, A., Lombardo, S., Bongiorno, C., Geer, R., Gilmer, D.C., Kirsch, P.D.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.22 MB

english, 2013

19

Barrier engineering for double layer CVD graphene tunnel FETs

Roy, T., Hesabi, Z.R., Joiner, C.A., Fujimoto, A., Vogel, E.M.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 679 KB

english, 2013

20

The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures

Juan, P.C., Liu, C.H., Lin, C.L., Mong, F.C., Huang, J.H.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.37 MB

english, 2013

21

Superior reliability of high mobility (Si)Ge channel pMOSFETs

Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph.J., Cho, M., Kauerauf, T., Mitard, J., Eneman, G., Witters, L., Grasser, T., Groeseneken, G.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.20 MB

english, 2013

22

Defects at Ge/oxide and III–V/oxide interfaces

Van de Walle, C.G., Choi, M., Weber, J.R., Lyons, J.L., Janotti, A.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 546 KB

english, 2013

23

Selector-less RRAM with non-linearity of device for cross-point array applications

Woo, Jiyong, Lee, Daeseok, Choi, Godeuni, Cha, Euijun, Kim, Seonghyun, Lee, Wootae, Park, Sangsu, Hwang, Hyunsang

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.17 MB

english, 2013

24

Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Shubhakar, Kalya, Pey, Kin Leong, Raghavan, Nagarajan, Kushvaha, Sunil Singh, Bosman, Michel, Wang, Zhongrui, O’Shea, Sean Joseph

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 2.56 MB

english, 2013

25

Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling

Han, J.-H., Zhang, R., Osada, T., Hata, M., Takenaka, M., Takagi, S.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 483 KB

english, 2013

26

Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices

Lee, Seok-Hee, Choi, Rino, Choi, Changhwan

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 695 KB

english, 2013

27

Voltage dependences of parameter drifts in hot carrier degradation for n-channel LDMOS transistors

Shahabuddin, S., Soin, N., Goh, K.K., Abdul Wahab, Y., Hussin, H.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 900 KB

english, 2013

28

Novel multi-bit memory device using metal/PVDF–TrFE/graphene stack

Hwang, Hyeon Jun, Yang, Jin Ho, Kang, Soo Cheol, Cho, Chunhum, Kang, Chang Goo, Lee, Young Gon, Lee, Byoung Hun

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.03 MB

english, 2013

29

Understanding Ge impact on VT and VFB in Si1−xGex/Si pMOSFETs

Soussou, A., Leroux, C., Rideau, D., Toffoli, A., Romano, G., Saxod, O., Bidal, G., Barge, D., Pellissier-Tanon, D., Abbate, F., Tavernier, C., Reimbold, G., Ghibaudo, G.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 916 KB

english, 2013

30

Electronic structure of lanthanide oxide high K gate oxides

Gillen, R., Robertson, J.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 458 KB

english, 2013

31

Inside Front Cover - Editorial Board

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 29 KB

english, 2013

32

Amphoteric defects in GaAs leading to Fermi-level pinning: A hybrid functional study

Colleoni, Davide, Pasquarello, Alfredo

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 902 KB

english, 2013

33

Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress

Meneghesso, G., Meneghini, M., Stocco, A., Bisi, D., de Santi, C., Rossetto, I., Zanandrea, A., Rampazzo, F., Zanoni, E.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 986 KB

english, 2013

34

Electrically active interface defects in the In0.53Ga0.47As MOS system

Djara, V., O’Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O’Connor, É., Povey, I.M., O’Connell, D., Pemble, M.E., Hurley, P.K.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.12 MB

english, 2013

35

Stress induced leakage current generated by hot-hole injection

Teramoto, Akinobu, Park, Hyeonwoo, Inatsuka, Takuya, Kuroda, Rihito, Sugawa, Shigetoshi, Ohmi, Tadahiro

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 612 KB

english, 2013

36

Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties

Hosoi, Takuji, Hideshima, Iori, Tanaka, Ryohei, Minoura, Yuya, Yoshigoe, Akitaka, Teraoka, Yuden, Shimura, Takayoshi, Watanabe, Heiji

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 729 KB

english, 2013

37

Analysis of metal insulator transitions in VO2 and V2O3 for RRAMs

Guo, Yuzheng, Robertson, John

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 357 KB

english, 2013

38

Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM

Lee, Daeseok, Woo, Jiyong, Cha, Euijun, Kim, Seonghyun, Lee, Wootae, Park, Sangsu, Hwang, Hyunsang

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.06 MB

english, 2013

39

Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structure

Jasiński, Jakub, Mazurak, Andrzej, Majkusiak, Bogdan

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.79 MB

english, 2013

40

Defect densities inside the conductive filament of RRAMs

Robertson, J., Gillen, R.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 630 KB

english, 2013

41

Influence of La on the electrical properties of HfSiON: From diffusion to Vth shifts

Hackenberg, M., Pichler, P., Baudot, S., Essa, Z., Gro-Jean, M., Tavernier, C., Schamm-Chardon, S.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 679 KB

english, 2013

42

Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation

Pampillón, María Ángela, Feijoo, Pedro Carlos, San Andrés, Enrique

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.25 MB

english, 2013

43

Defect energy levels of the As–As dimer at InGaAs/oxide interfaces: A first principles study

Miceli, Giacomo, Pasquarello, Alfredo

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 777 KB

english, 2013

44

Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices

Chen, Chien-Hung, Li, Yiming, Chen, Chieh-Yang, Chen, Yu-Yu, Hsu, Sheng-Chia, Huang, Wen-Tsung, Chu, Sheng-Yuan

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.08 MB

english, 2013

45

Point defects in thermal GaAs/GaAs-oxide structures probed by electron paramagnetic resonance

Nguyen, S., Stesmans, A., Afanas’ev, V.V.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 362 KB

english, 2013

46

Identification of intrinsic electron trapping sites in bulk amorphous silica from ab initio calculations

El-Sayed, Al-Moatasem, Watkins, Matthew B., Shluger, Alexander L., Afanas’ev, Valeri V.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 592 KB

english, 2013

47

First demonstration of device-quality symmetric N-MOS and P-MOS capacitors on p-type and n-type crystalline Ge substrates

Lucovsky, G., Kim, J.W., Nordlund, D.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 735 KB

english, 2013

48

Electron spin resonance analysis of sputtering-induced defects in advanced low-κ insulators (κ=2.0–2.5)

Stesmans, A., Nguyen, A.P.D., Houssa, M., Afanas’ev, V.V., Tőkei, Zs., Baklanov, M.R.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 387 KB

english, 2013

49

Author Index

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 192 KB

english, 2013

50

Electron mobility in heavily doped junctionless nanowire SOI MOSFETs

Rudenko, T., Nazarov, A., Yu, R., Barraud, S., Cherkaoui, K., Razavi, P., Fagas, G.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 852 KB

english, 2013

51

Charge trapping processes at memory window formation in single- and double nanocrystal layered NVMs

Ievtukh, V., Nazarov, A., Turchanikov, V., Lysenko, V., Nassiopoulou, A.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.67 MB

english, 2013

52

Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown

Miranda, E., Kawanago, T., Kakushima, K., Suñé, J., Iwai, H.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 507 KB

english, 2013

53

Identification of the (√E+1/E)-dependence of porous low-k time dependent dielectric breakdown using over one year long package level tests

Chery, E., Federspiel, X., Roy, D., Volpi, F., Chaix, J.-M.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 488 KB

english, 2013

54

Stress induced defect generation implications of doping HfO2 with Al

O’Connor, R., Kauerauf, T., Arimura, H., Ragnarsson, L.A.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.10 MB

english, 2013

55

High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments

San Andrés, Enrique, Pampillón, María Ángela, Feijoo, Pedro Carlos, Pérez, Raúl, Cañadilla, Carmina

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.15 MB

english, 2013

56

Preface

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 146 KB

english, 2013

57

High-k gadolinium and aluminum scandates for hybrid floating gate NAND flash

Lisoni, Judit G., Breuil, Laurent, Nyns, Laura, Blomme, Pieter, Van den bosch, Geert, Van Houdt, Jan

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 667 KB

english, 2013

58

Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics

Lehmann, J., Hübner, R., Borany, J.V., Skorupa, W., Mikolajick, T., Schäfer, A., Schubert, J., Mantl, S.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.41 MB

english, 2013

59

Gate-first n-MOSFET with a sub-0.6-nm EOT gate stack

Cheng, C.H., Chou, K.I., Chin, A.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 744 KB

english, 2013

60

Chemical trends and passivation of defects at Al2O3:GaAs/InAs/InP/GaSb interfaces

Guo, Yuzheng, Robertson, John

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.75 MB

english, 2013

61

Transformation of a metal–insulator-silicon structure into a resonant-tunneling diode

Kareva, G.G., Vexler, M.I., Illarionov, Yu.Yu.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 946 KB

english, 2013

62

AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD

Meunier, R., Torres, A., Morvan, E., Charles, M., Gaud, P., Morancho, F.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1000 KB

english, 2013

63

Epitaxial ferroelectric oxides on semiconductors- A route towards negative capacitance devices

Droopad, R., Contreras-Guerrero, R., Veazey, J.P., Qiao, Q., Klie, R.F., Levy, J.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.05 MB

english, 2013

64

Structural, ferroelectric, electronic and transport properties of BaTiO3/Pt heterostructures grown on MgO(001)

Minnekaev, M., Bulakh, K., Chouprik, A., Drube, W., Ershov, P., Lebedinskii, Yu., Maksimova, K., Zenkevich, A.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.53 MB

english, 2013

65

The race of phase change memories to nanoscale storage and applications

Lacaita, Andrea L., Redaelli, Andrea

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1014 KB

english, 2013

66

Optimized electrode and interface for enhanced reliability of high-k based metal–insulator–metal capacitors

Koch, Johannes, Seidel, Konrad, Weinreich, Wenke, Riedel, Stefan, Chiang, Jung-Chin, Beyer, Volkhard

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.10 MB

english, 2013

67

Impact of dielectric crystallinity on the resistive switching characteristics of ZrTiOx-based metal–insulator-metal devices

Lin, Chia-Chun, Wu, Yung-Hsien, Hung, Tung-Hsuan, Hou, Chin-Yao

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.08 MB

english, 2013

68

Gate current random telegraph noise and single defect conduction

Kaczer, B., Toledano-Luque, M., Goes, W., Grasser, T., Groeseneken, G.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 941 KB

english, 2013

69

Investigation of MOSC conductance spectra by MPAS technique

Gutt, T., Przewłocki, H.M.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.20 MB

english, 2013

70

Ultrathin layer transfer technology for post-Si semiconductors

Maeda, Tatsuro, Ishii, Hiroyuki, Itatani, Taro, Mieda, Eiko, Jevasuwan, Wipakorn, Kurashima, Yuichi, Takagi, Hideki, Yasuda, Tetsuji, Takada, Tomoyuki, Yamamoto, Taketsugu, Aoki, Takeshi, Osada, Taken

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 755 KB

english, 2013

71

Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces

Zhang, R., Lin, J.C., Yu, X., Takenaka, M., Takagi, S.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 711 KB

english, 2013

72

Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks

Chang, C.-Y., Yokoyama, M., Kim, S.-H., Ichikawa, O., Osada, T., Hata, M., Takenaka, M., Takagi, S.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 771 KB

english, 2013

73

The unexpected effects of crystallization on Ta2O5 as studied by HRTEM and C-AFM

Celano, Umberto, Chintala, Ravi Chandra, Adelmann, Christoph, Richard, Olivier, Vandervorst, Wilfried

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.10 MB

english, 2013

74

Gate-last integration on planar FDSOI for low-VTp and low-EOT MOSFETs

Morvan, S., Andrieu, F., Leroux, C., Garros, X., Cassé, M., Martin, F., Gassilloud, R., Morand, Y., Le Royer, C., Besson, P., Roure, M.-C., Euvrard, C., Rivoire, M., Seignard, A., Desvoivres, L., Barn

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 816 KB

english, 2013

75

The intrinsic parameter fluctuation on high-κ/metal gate bulk FinFET devices

Li, Yiming, Su, Hsin-Wen, Chen, Yu-Yu, Hsu, Sheng-Chia, Huang, Wen-Tsung

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 2.58 MB

english, 2013

76

Interface engineering of Ge using thulium oxide: Band line-up study

Mitrovic, I.Z., Althobaiti, M., Weerakkody, A.D., Sedghi, N., Hall, S., Dhanak, V.R., Chalker, P.R., Henkel, C., Dentoni Litta, E., Hellström, P.-E., Östling, M.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 748 KB

english, 2013

77

Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition

Mather, S., Sedghi, N., Althobaiti, M., Mitrovic, I.Z., Dhanak, V., Chalker, P.R., Hall, S.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 654 KB

english, 2013

78

Ab initio validation of continuum models parametrizations for ultrascaled SOI interfaces

Biel, Blanca, Donetti, Luca, Godoy, Andres, Gámiz, Francisco

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1013 KB

english, 2013

79

Control of metal/oxide electron barriers in CBRAM cells by low work-function liners

De Stefano, F., Afanas’ev, V.V., Houssa, M., Stesmans, A., Opsomer, K., Jurczak, M., Goux, L.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 395 KB

english, 2013

80

Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures

Bae, Sung-Bum, Kim, Ki-Won, Lee, Yong Soo, Lee, Jung-Hee, Bae, Youngho, Cristoloveanu, Sorin

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 595 KB

english, 2013

81

Charge trapping and electrical degradation in atomic layer deposited Al2O3 films

Gonzalez, M.B., Rafí, J.M., Beldarrain, O., Zabala, M., Campabadal, F.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.57 MB

english, 2013

82

Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure

Ma, J., Zhang, J.F., Ji, Z., Benbakhti, B., Duan, M., Zhang, W., Zheng, X.F., Mitard, J., Kaczer, B., Groeseneken, G., Hall, S., Robertson, J., Chalker, P.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 380 KB

english, 2013

83

Effect of aluminum addition to solution-derived amorphous indium zinc oxide thin film for an oxide thin film transistors

Park, Sung Min, Lee, Dong Hee, Lim, You Sung, Kim, Dae Kuk, Yi, Moonsuk

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.28 MB

english, 2013

84

Improved programming and erasing speeds of poly-Si flash memory device by HfO2/Si3N4 bandgap-engineered trapping layer

Chen, Chun-Yuan, Chang-Liao, Kuei-Shu, Ho, Hao-Wei, Wang, Tien-Ko

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.24 MB

english, 2013

85

Table of Contents

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 167 KB

english, 2013

86

MOSFET layout modifications for hump effect removal

Carmona, M., Rebuffat, B., Delalleau, J., Gagliano, O., Lopez, L., Ogier, J.-L., Goguenheim, D.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.01 MB

english, 2013

87

Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si(100) substrate near the interface

Suwa, Tomoyuki, Teramoto, Akinobu, Nagata, Kohki, Ogura, Atsushi, Nohira, Hiroshi, Muro, Takayuki, Kinoshita, Toyohiko, Sugawa, Shigetoshi, Ohmi, Tadahiro, Hattori, Takeo

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 756 KB

english, 2013

88

Analytical model for anomalous Positive Bias Temperature Instability in La-based HfO2 nFETs based on independent characterization of charging components

Toledano-Luque, M., Kaczer, B., Aoulaiche, M., Spessot, A., Roussel, Ph.J., Ritzenthaler, R., Schram, T., Thean, A., Groeseneken, G.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 2.26 MB

english, 2013

89

RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application

de Andrade, Maria Glória Caño, Toledano-Luque, María, Fourati, Fatma, Degraeve, Robin, Martino, João Antonio, Claeys, Cor, Simoen, Eddy, Van den Bosch, Geert, Van Houdt, Jan

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 807 KB

english, 2013

90

Construction of atomic-scale logic gates on a surface of hydrogen passivated germanium

Kolmer, Marek, Godlewski, Szymon, Lis, Jakub, Such, Bartosz, Kantorovich, Lev, Szymonski, Marek

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.49 MB

english, 2013

91

Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition

Li, Chen-Chien, Chang-Liao, Kuei-Shu, Fu, Chung-Hao, Hsieh, Tsung-Lin, Chen, Li-Ting, Liao, Yu-Liang, Lu, Chun-Chang, Wang, Tien-Ko

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.16 MB

english, 2013

92

Trap density characterization through low-frequency noise in junctionless transistors

Doria, Rodrigo Trevisoli, Trevisoli, Renan Doria, de Souza, Michelly, Pavanello, Marcelo Antonio

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1020 KB

english, 2013

93

Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries

Iglesias, V., Martin-Martinez, J., Porti, M., Rodriguez, R., Nafria, M., Aymerich, X., Erlbacher, T., Rommel, M., Murakami, K., Bauer, A.J., Frey, L., Bersuker, G.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 496 KB

english, 2013

94

Epitaxial thin films of BaSrO as gate dielectric

Islam, S., Müller-Sajak, D., Hofmann, K.R., Pfnür, H.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 479 KB

english, 2013

95

Thermally activated analysis of LaSiOx/Si and GdSiOx/Si structures at cryogenic temperatures

Tyagulskii, I.P., Tyagulskii, S.I., Nazarov, A.N., Lysenko, V.S., Cherkaoui, K., Hurley, P.K.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.01 MB

english, 2013

96

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

Takagi, Shinichi, Zhang, Rui, Takenaka, Mitsuru

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.15 MB

english, 2013

97

Si cap passivation for Ge nMOS applications

Sioncke, S., Vanherle, W., Art, W., Ceuppens, J., Ivanov, Ts., Lin, D., Nyns, L., Delabie, A., Conard, T., Struyf, H., De Gendt, S., Caymax, M., Collaert, N., Thean, A.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.29 MB

english, 2013

98

Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

Juan, P.C., Sun, C.L., Liu, C.H., Lin, C.L., Mong, F.C., Huang, J.H., Chang, H.S.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.14 MB

english, 2013

99

Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization

Tang, Baojun, Toledano-Luque, M., Zhang, W.D., Van den bosch, G., Degraeve, R., Zhang, J.F., Van Houdt, J.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 838 KB

english, 2013

100

Defects at Ge:GeO2 and Ge:MeOx interfaces

Li, H., Robertson, J.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 2.50 MB

english, 2013

101

High quality Ge surface passivation layer formed by thermal oxidation of Y/Ge structure

Wu, Min-Lin, Wu, Yung-Hsien, Lyu, Rong-Jhe, Chao, Chun-Yen, Wu, Chao-Yi, Lin, Chia-Chun, Chen, Lun-Lun

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.22 MB

english, 2013