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Analytical modelling of the current (I)–voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditions
Jit, Satyabrata, Tripathi, ShwetaVolume:
7
Language:
english
Journal:
IET Circuits, Devices & Systems
DOI:
10.1049/iet-cds.2012.0145
Date:
January, 2013
File:
PDF, 535 KB
english, 2013