Volume 7; Issue 1

IET Circuits Devices & Systems

Volume 7; Issue 1

1

Analytical modelling of the current (I)–voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditions

Jit, Satyabrata, Tripathi, Shweta

Journal:

IET Circuits Devices & Systems

Year:

2013

Language:

english

File:

PDF, 535 KB

english, 2013

2

A 0.38 V near/sub-V T digitally controlled low-dropout regulator with enhanced power supply noise rejection in 90 nm CMOS process

Li, Peng, Kim, Yongtae

Journal:

IET Circuits Devices & Systems

Year:

2013

Language:

english

File:

PDF, 1.25 MB

english, 2013

3

1.1-V, 8-bit, 12 MS/s asynchronous reference-free successive-approximation-register analogue-to-digital converter in 0.18 μm CMOS with separated capacitor arrays

Huang, Guanzhong, Lin, Pingfen

Journal:

IET Circuits Devices & Systems

Year:

2013

Language:

english

File:

PDF, 876 KB

english, 2013

4

Performance characterisation of a microwave transistor for the maximum output power and the required noise

Güneş, Filiz, Demirel, Salih

Journal:

IET Circuits Devices & Systems

Year:

2013

Language:

english

File:

PDF, 1.41 MB

english, 2013

5

Low-component count BJT technology-based current-controlled tunable resistors and their applications

Yuce, Erkan, Arslanalp, Remzi, Tola, Abdullah T.

Journal:

IET Circuits Devices & Systems

Year:

2013

Language:

english

File:

PDF, 868 KB

english, 2013