Fabrication and characteristics of thin-film InGaN–GaN...

Semiconductor Science and Technology 2007 / 07 Vol. 22; Iss. 7

Fabrication and characteristics of thin-film InGaN–GaN light-emitting diodes with TiO 2 /SiO 2 omnidirectional reflectors

Chiu, C H, Kuo, H C, Lee, C E, Lin, C H, Cheng, P C, Huang, H W, Lu, T C, Wang, S C, Leung, K M
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Volume:
22
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/22/7/029
Date:
July, 2007
File:
PDF, 715 KB
english, 2007
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