300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
Lee, Dong Seup, Gao, Xiang, Guo, Shiping, Kopp, David, Fay, Patrick, Palacios, TomásVolume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2011.2164613
Date:
November, 2011
File:
PDF, 477 KB
english, 2011