Volume 32; Issue 11

IEEE Electron Device Letters

Volume 32; Issue 11

1

Thirteenth IEEE International Vacuum Electronics Conference and Ninth IEEE International Vacuum Electron Sources Conference (IVEC-IVESC 2012)

Journal:

IEEE Electron Device Letters

Year:

2011

File:

PDF, 1015 KB

2011

2

Ge/SiGe Quantum Well p-i-n Structures for Uncooled Infrared Bolometers

Atar, F.B., Yesilyurt, A., Onbasli, M.C., Hanoglu, O., Okyay, A.K.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 395 KB

english, 2011

3

Vertically Integrated Unidirectional Biristor

Dong-Il Moon, Sung-Jin Choi, Sungho Kim, Jae-Sub Oh, Young-Su Kim, Yang-Kyu Choi

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 406 KB

english, 2011

4

Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

Zhou, Guangle, Lu, Yeqing, Li, Rui, Zhang, Qin, Hwang, Wan Sik, Liu, Qingmin, Vasen, Tim, Chen, Chen, Zhu, Haijun, Kuo, Jenn-Ming, Koswatta, Siyuranga, Kosel, Tom, Wistey, Mark, Fay, Patrick, Seabaugh

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 497 KB

english, 2011

5

Pocket Implant-Dependent Channel Mobility in Advanced p-MOSFETs With Strain Engineering

Choi, Youn Sung, Ekbote, Shashank, Baldwin, Greg

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 416 KB

english, 2011

6

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

Lee, Dong Seup, Gao, Xiang, Guo, Shiping, Kopp, David, Fay, Patrick, Palacios, TomÃ¡s

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 477 KB

english, 2011

7

pH Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Al-Doped ZnO Nanostructures Hydrothermally Synthesized at Low Temperatures

Yang, Po-Yu, Wang, Jyh-Liang, Chiu, Po-Chun, Chou, Jung-Chuan, Chen, Cheng-Wei, Li, Hung-Hsien, Cheng, Huang-Chung

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 396 KB

english, 2011

8

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

Lecourt, F., Ketteniss, N., Behmenburg, H., Defrance, N., Hoel, V., Eickelkamp, M., Vescan, A., Giesen, C., Heuken, M., De Jaeger, J.-C.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 129 KB

english, 2011

9

Voltage-Pulse-Induced Switching Dynamics in $ \hbox{VO}_{2}$ Thin-Film Devices on Silicon

Seo, Giwan, Kim, Bong-Jun, Ko, Changhyun, Cui, Yanjie, Lee, Yong Wook, Shin, Jun-Hwan, Ramanathan, Shriram, Kim, Hyun-Tak

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 420 KB

english, 2011

10

Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors

Chen, Wei-Tsung, Lo, Shih-Yi, Kao, Shih-Chin, Zan, Hsiao-Wen, Tsai, Chuang-Chuang, Lin, Jian-Hong, Fang, Chun-Hsiang, Lee, Chung-Chun

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 336 KB

english, 2011

11

High-Performance $\hbox{Ni}/\hbox{Lu}_{2}\hbox{O}_{3}/ \hbox{TaN}$ Metal–Insulator–Metal Capacitors

S. Mondal, T. Pan

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 377 KB

english, 2011

12

Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

I. B. Rowena, S. L. Selvaraj, T. Egawa

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 446 KB

english, 2011

13

CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With $\leq 50$-mV/decade Subthreshold Swing

Gandhi, Ramanathan, Chen, Zhixian, Singh, Navab, Banerjee, Kaustav, Lee, Sungjoo

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 314 KB

english, 2011

14

Fully Gravure Printed Half Adder on Plastic Foils

J. Noh, S. Kim, K. Jung, J. Kim, S. Cho, G. Cho

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 357 KB

english, 2011

15

Low-Voltage Organic/Inorganic Hybrid Transparent Thin-Film Transistors Gated by Chitosan-Based Proton Conductors

B. Zhou, J. Sun, X. Han, J. Jiang, Q. Wan

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 337 KB

english, 2011

16

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

Son, Myungwoo, Lee, Joonmyoung, Park, Jubong, Shin, Jungho, Choi, Godeuni, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Hwang, Hyunsang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 421 KB

english, 2011

17

Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory

G. Van Den Bosch, G. S. Kar, P. Blomme, A. Arreghini, A. Cacciato, L. Breuil, A. De Keersgieter, V. Paraschiv, C. Vrancken, B. Douhard, O. Richard, S. Van Aerde, I. Debusschere, J. Van Houdt

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 440 KB

english, 2011

18

Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics

B. Tsui, P. Li, C. Yen

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 451 KB

english, 2011

19

Effect of $\hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5}$ Thermal Barrier on Reset Operations in Filament-Type Resistive Memory

W. Lee, M. Siddik, S. Jung, J. Park, S. Kim, J. Shin, J. Lee, S. Park, M. Son, H. Hwang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 419 KB

english, 2011

20

Surface-Potential-Based Analytic DC $I$ –$V$ Model With Effective Electron Density for $a$-IGZO TFTs Considering the Parasitic Resistance

J. Park, Y. Kim, S. Kim, H. Bae, D. H. Kim, D. M. Kim

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 197 KB

english, 2011

21

Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin-Film Transistors With Effective Carrier Density

M. Bae, Y. Kim, D. Kong, H. K. Jeong, W. Kim, J. Kim, I. Hur, D. M. Kim, D. H. Kim

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 324 KB

english, 2011

22

A Physical Model for Work-Function Variation in Ultra-Short Channel Metal-Gate MOSFETs

S. H. Rasouli, C. Xu, N. Singh, K. Banerjee

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 258 KB

english, 2011

23

Application of Post-$\hbox{HfO}_{2}$ Fluorine Plasma Treatment for Improvement of $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ MOSFET Performance

Chen, Yen-Ting, Wang, Yanzhen, Xue, Fei, Zhou, Fei, Lee, Jack C.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 422 KB

english, 2011

24

Electrical and Photosensivity Characteristics of Hybrid/Composite ZnO Nanorod Transistors

Peng, Shi-Ming, Su, Yan-Kuin, Ji, Liang-Wen

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 304 KB

english, 2011

25

Scaling of Silicon Phase-Change Oscillators

Cywar, Adam, Dirisaglik, Faruk, Akbulut, Mustafa, Bakan, Gokhan, Steen, Steven, Silva, Helena, Gokirmak, Ali

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 422 KB

english, 2011

26

Realization of Ni Fully Silicided Gate on Vertical Silicon Nanowire MOSFETs for Adjusting Threshold Voltage $({V}_{T})$

Chen, Z. X., Singh, N., Lo, G. Q., Kwong, D.-L.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 399 KB

english, 2011

27

Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection

Lien, Wei-Cheng, Tsai, Dung-Sheng, Chiu, Shu-Hsien, Senesky, Debbie G., Maboudian, Roya, Pisano, Albert P., He, Jr-Hau

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 422 KB

english, 2011

28

Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment

Kang, Chang Goo, Lee, Sang Kyung, Lee, Young Gon, Hwang, Hyeon Jun, Cho, Chunhum, Lim, Sung Kwan, Heo, Jinseong, Chung, Hyun-Jong, Yang, Heejun, Seo, Sunae, Lee, Byoung Hun

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 292 KB

english, 2011

29

Low-Voltage Electric-Double-Layer TFTs on $ \hbox{SiO}_{2}$-Covered Paper Substrates

Dou, Wei, Jiang, Jie, Sun, Jia, Zhou, Bin, Wan, Qing

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 404 KB

english, 2011

30

Forming-Free $\hbox{TiO}_{2}$-Based Resistive Switching Devices on CMOS-Compatible W-Plugs

Hermes, C., Bruchhaus, R., Waser, R.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 428 KB

english, 2011

31

Sub-10-nm Tunnel Field-Effect Transistor With Graded Si/Ge Heterojunction

Shih, Chun-Hsing, Chien, Nguyen Dang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 559 KB

english, 2011

32

Variability of Inversion-Mode and Junctionless FinFETs due to Line Edge Roughness

Leung, Greg, Chui, Chi On

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 400 KB

english, 2011

33

AlGaN-on-Si-Based 10-$\mu\hbox{m}$ Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range

Malinowski, Pawel E., Duboz, Jean-Yves, De Moor, Piet, John, Joachim, Minoglou, Kyriaki, Srivastava, Puneet, Semond, Fabrice, Frayssinet, Eric, Giordanengo, Boris, BenMoussa, Ali, Kroth, Udo, Gottwald

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 392 KB

english, 2011

34

Reset Statistics of NiO-Based Resistive Switching Memories

Long, Shibing, Cagli, Carlo, Ielmini, Daniele, Liu, Ming, Sune, Jordi

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 305 KB

english, 2011

35

Fully Room-Temperature-Fabricated Low-Voltage Operating Pentacene-Based Organic Field-Effect Transistors With HfON Gate Insulator

Liao, Min, Ishiwara, Hiroshi, Ohmi, Shun-ichiro

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 267 KB

english, 2011

36

High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer

Lee, Geng-Yen, Liu, Hsueh-Hsing, Chyi, Jen-Inn

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 366 KB

english, 2011

37

Thin-Film Thermocouple Array for Time-Resolved Local Temperature Mapping

Liu, Haixiao, Sun, Weiqiang, Chen, Qing, Xu, Shengyong

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 341 KB

english, 2011

38

Impact Ionization Coefficients in $\hbox{Al}_{0.52} \hbox{In}_{0.48}\hbox{P}$

Ong, Jennifer S. L., Ng, Jo S., Krysa, Andrey B., David, John P. R.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 192 KB

english, 2011

39

Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation

de Andrade, Maria Glória Caño, Martino, João Antonio, Simoen, Eddy, Claeys, Cor

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 230 KB

english, 2011

40

An Improved Si Tunnel Field Effect Transistor With a Buried Strained $\hbox{Si}_{1-x}\hbox{Ge}_{x}$ Source

Zhao, Q. T., Hartmann, J. M., Mantl, S.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 404 KB

english, 2011

41

150-GHz RF SOI-CMOS Technology in Ultrathin Regime on Organic Substrate

Lecavelier des Etangs-Levallois, Aurélien, Dubois, Emmanuel, Lesecq, Marie, Danneville, François, Poulain, Laurent, Tagro, Yoann, Lepilliet, Sylvie, Gloria, Daniel, Raynaud, Christine, Troadec, David

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 577 KB

english, 2011

42

Temperature- and Doping-Dependent Anisotropic Stationary Electron Velocity in Wurtzite GaN

Sridharan, Sriraaman, Christensen, Adam, Venkatachalam, Anusha, Graham, Samuel, Yoder, P. D.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 146 KB

english, 2011