Surface Passivation and CMOS-Compatible Palladium–Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs
Chin, Hock-Chun, Zhu, Ming, Tung, Chih-Hang, Samudra, Ganesh S., Yeo, Yee-ChiaVolume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2008.921393
Date:
June, 2008
File:
PDF, 366 KB
english, 2008