Volume 29; Issue 6

IEEE Electron Device Letters

Volume 29; Issue 6

1

Extensive Analysis of the Degradation of Blu-Ray Laser Diodes

Meneghini, M., Meneghesso, G., Trivellin, N., Zanoni, E., Orita, K., Yuri, M., Ueda, D.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 148 KB

english, 2008

2

Quantitative Evaluation of Statistical Variability Sources in a 45-nm Technological Node LP N-MOSFET

Cathignol, A., Cheng, B., Chanemougame, D., Brown, A.R., Rochereau, K., Ghibaudo, G., Asenov, A.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 352 KB

english, 2008

3

Surface Passivation and CMOS-Compatible Palladium–Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs

Chin, Hock-Chun, Zhu, Ming, Tung, Chih-Hang, Samudra, Ganesh S., Yeo, Yee-Chia

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 366 KB

english, 2008

4

A 60-GHz Millimeter-Wave CPW-Fed Yagi Antenna Fabricated by Using 0.18- $\mu\hbox{m}$ CMOS Technology

Shun-Sheng Hsu,, Kuo-Chih Wei,, Cheng-Ying Hsu,, Huey Ru-Chuang,

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 422 KB

english, 2008

5

Sb-Heterostructure Millimeter-Wave Detectors With Reduced Capacitance and Noise Equivalent Power

Su, N., Rajavel, R., Deelman, P., Schulman, J.N., Fay, P.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 282 KB

english, 2008

6

Is SOD Technology the Solution to Heating Problems in SOI Devices?

Raleva, K., Vasileska, D., Goodnick, S.M.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 567 KB

english, 2008

7

Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Li, Haiou, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 353 KB

english, 2008

8

Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer

S. Chowdhury, B. L. Swenson, U. K. Mishra

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 240 KB

english, 2008

9

$mu hbox{m}$ Logic CMOS Technology]]>

Shim, Dongha, Sankaran, Swaminathan, O, Kenneth K.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 250 KB

english, 2008

10

A Ta/Mo Interdiffusion Dual Metal Gate Technology for Drivability Enhancement of FinFETs

T. Matsukawa, K. Endo, Yongxun Liu, S. O'uchi, Y. Ishikawa, H. Yamauchi, J. Tsukada, K. Ishii, M. Masahara, K. Sakamoto, E. Suzuki

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 288 KB

english, 2008

11

Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

Y. Jiang, N. Singh, T. Y. Liow, W. Y. Loh, S. Balakumar, K. M. Hoe, C. H. Tung, V. Bliznetsov, S. C. Rustagi, G. Q. Lo, D. S. H. Chan, D. L. Kwong

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 242 KB

english, 2008

12

High-Efficiency GaN-Based Light-Emitting Diodes Fabricated With Metallic Hybrid Reflectors

Hyunsoo Kim, Sung-nam Lee, Yongjo Park, Tae-yeon Seong

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 396 KB

english, 2008

13

The Quantization Impact of Accumulated Carriers in Silicide-Gated MOSFETs

N. Rodriguez, F. Gamiz, R. Clerc, G. Ghibaudo, S. Cristoloveanu

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 345 KB

english, 2008

14

Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect

V. C. Su, I. S. Lin, J. B. Kuo, G. S. Lin, D. Chen, C. S. Yeh, C. T. Tsai, M. Ma

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 467 KB

english, 2008

15

Combining a Novel Charge-Based Capacitance Measurement (CBCM) Technique and Split $C$–$V$ Method to Specifically Characterize the STI Stress Effect Along the Width Direction of MOSFET Devices

Chang, Yao-Wen, Chang, Hsin-Wen, Lu, Tao-Cheng, King, Ya-Chin, Chen, Kuang-Chao, Lu, Chih-Yuan

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 174 KB

english, 2008

16

Performances

Le Royer, C., Vincent, B., Clavelier, L., Damlencourt, J.-F., Tabone, C., Batude, P., Blachier, D., Truche, R., Campidelli, Y., Nguyen, Q. T., Cristoloveanu, S., Soliveres, S., Le Carval, G., Boulange

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 379 KB

english, 2008

17

A Novel 1200-V LDMOSFET With Floating Buried Layer in Substrate

Cheng, Jianbing, Zhang, Bo, Li, Zhaoji

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 340 KB

english, 2008

18

Voltage-Controlled Relaxation Oscillations in Phase-Change Memory Devices

Ielmini, D., Mantegazza, D., Lacaita, A.L.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 150 KB

english, 2008

19

A Bulk FinFET Unified-RAM (URAM) Cell for Multifunctioning NVM and Capacitorless 1T-DRAM

Han, Jin-Woo, Ryu, Seong-Wan, Kim, Sungho, Kim, Chung-Jin, Ahn, Jae-Hyuk, Choi, Sung-Jin, Kim, Jin Soo, Kim, Kwang Hee, Lee, Gi Sung, Oh, Jae Sub, Song, Myeong Ho, Park, Yun Chang, Kim, Jeoung Woo, Ch

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 442 KB

english, 2008

20

Emitter-Size Effects and Ultimate Scalability of InP:GaInP/GaAsSb/InP DHBTs

Liu, H.G., Ostinelli, O., Zeng, Y.P., Bolognesi, C.R.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 406 KB

english, 2008

21

A Radiation Imaging Detector Made by Postprocessing a Standard CMOS Chip

Blanco Carballo, Victor Manuel, Chefdeville, Maximilien, Fransen, Martin, van der Graaf, Harry, Melai, Joost, Salm, Cora, Schmitz, Jurriaan, Timmermans, Jan

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 402 KB

english, 2008

22

A Nanoscale Vertical Double-Gate Single-Transistor Capacitorless DRAM

Ertosun, M.G., Hoon Cho,, Kapur, P., Saraswat, K.C.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 318 KB

english, 2008

23

Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory

Ihun Song,, Sunil Kim,, Huaxiang Yin,, Chang Jung Kim,, Jaechul Park,, Sangwook Kim,, Hyuk Soon Choi,, Eunha Lee,, Youngsoo Park,

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 430 KB

english, 2008

24

Fabrication of Self-Aligned Enhancement-Mode $ \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With $ \hbox{TaN/HfO}_{2}\hbox{/AlN}$ Gate Stack

Shahrjerdi, D., Rotter, T., Balakrishnan, G., Huffaker, D., Tutuc, E., Banerjee, S.K.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 194 KB

english, 2008

25

A Novel SR Latch Device Realized by Integration of Three-Terminal Ballistic Junctions in InGaAs/InP

Sun, Jie, Wallin, Daniel, Maximov, Ivan, Xu, H. Q.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 246 KB

english, 2008

26

Strain-Engineered Si/SiGe Resonant Interband Tunneling Diodes Grown on $\hbox{Si}_{0.8}\hbox{Ge}_{0.2}$ Virtual Substrates With Strained Si Cladding Layers

Jin, Niu, Yu, Ronghua, Chung, Sung-Yong, Berger, Paul R., Thompson, Phillip E.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 169 KB

english, 2008

27

Passivation Effect of Poly-Si Thin-Film Transistors With Fluorine-Ion-Implanted Spacers

Wei-Ren Chen,, Ting-Chang Chang,, Po-Tsun Liu,, Chen Jung Wu,, Chun-Hao Tu,, Sze, S.M., Chun-Yen Chang,

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 377 KB

english, 2008

28

Assessing Alpha Particle-Induced Single Event Transient Vulnerability in a 90-nm CMOS Technology

Gadlage, Matthew J., Schrimpf, Ronald D., Narasimham, Balaji, Pellish, Jonathan A., Warren, Kevin M., Reed, Robert A., Weller, Robert A., Bhuva, Bharat L., Massengill, Lloyd W., Zhu, Xiaowei

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 325 KB

english, 2008

29

-State Leakage and Reliability in Metal-Gate/High- $k$ Dielectric MOSFETs

Kyong Taek Lee,, Chang Yong Kang,, Byung Sun Ju,, Choi, R., Kyung Seok Min,, Ook Sang Yoo,, Byoung Hun Lee,, Jammy, R., Lee, J.C., Hi-Deok Lee,, Yoon-Ha Jeong,

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 409 KB

english, 2008

30

Electronic Properties and Junction Behavior of Polyanthranilic Acid/Metal Contacts

Singh, Arun Kumar, Prakash, Rajiv, Dwivedi, A.D.D., Chakrabarti, P.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 190 KB

english, 2008

31

High-Performance Metal-Induced Laterally Crystallized Polycrystalline Silicon P-Channel Thin-Film Transistor With $\hbox{TaN/HfO}_{2}$ Gate Stack Structure

Ming-Wen Ma,, Tien-Sheng Chao,, Chun-Jung Su,, Woei-Cherng Wu,, Kuo-Hsing Kao,, Tan-Fu Lei,

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 424 KB

english, 2008

32

Improving Switching Performance of Thin-Film Transistors in Disordered Silicon

Xiaojun Guo,, Ishii, T., Silva, S.R.P.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 377 KB

english, 2008