3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN...

IEEE Electron Device Letters 2012 / 07 Vol. 33; Iss. 7

3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier

Lee, Hyung-Seok, Piedra, Daniel, Sun, Min, Gao, Xiang, Guo, Shiping, Palacios, Tomás
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2012.2196673
Date:
July, 2012
File:
PDF, 535 KB
english, 2012
Conversion to is in progress
Conversion to is failed