pH Sensing Characteristics of Extended-Gate Field-Effect...

IEEE Electron Device Letters 2011 / 11 Vol. 32; Iss. 11

pH Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Al-Doped ZnO Nanostructures Hydrothermally Synthesized at Low Temperatures

Yang, Po-Yu, Wang, Jyh-Liang, Chiu, Po-Chun, Chou, Jung-Chuan, Chen, Cheng-Wei, Li, Hung-Hsien, Cheng, Huang-Chung
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2011.2164230
Date:
November, 2011
File:
PDF, 396 KB
english, 2011
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