Conduction mechanisms in thermal nitride and dry gate...

Microelectronics Reliability 2013 / 12 Vol. 53; Iss. 12

Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC

Ouennoughi, Z., Strenger, C., Bourouba, F., Haeublein, V., Ryssel, H., Frey, L.
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Volume:
53
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2013.06.009
Date:
December, 2013
File:
PDF, 982 KB
english, 2013
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