Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With...

IEEE Electron Device Letters 2010 / 12 Vol. 31; Iss. 12

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

Wang, Ronghua, Saunier, Paul, Xing, Xiu, Lian, Chuanxin, Gao, Xiang, Guo, Shiping, Snider, Gregory, Fay, Patrick, Jena, Debdeep, Xing, Huili
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2010.2072771
Date:
December, 2010
File:
PDF, 319 KB
english, 2010
Conversion to is in progress
Conversion to is failed