A Novel Charge-Trapping-Type Memory With Gate-All-Around...

IEEE Electron Device Letters 2013 / 03 Vol. 34; Iss. 3

A Novel Charge-Trapping-Type Memory With Gate-All-Around Poly-Si Nanowire and HfAlO Trapping Layer

Lee, Ko-Hui, Lin, Horng-Chih, Huang, Tiao-Yuan
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2237748
Date:
March, 2013
File:
PDF, 656 KB
english, 2013
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