Volume 34; Issue 3

IEEE Electron Device Letters

Volume 34; Issue 3

1

Resonant Magnetic Field Sensor With Capacitive Driving and Electromagnetic Induction Sensing

Wu, Guoqiang, Xu, Dehui, Xiong, Bin, Feng, Duan, Wang, Yuelin

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 363 KB

english, 2013

2

Graphene FETs for Zero-Bias Linear Resistive FET Mixers

Moon, J. S., Seo, H.-C., Antcliffe, M., Le, D., McGuire, C., Schmitz, A., Nyakiti, L. O., Gaskill, D. K., Campbell, P. M., Lee, K.-M., Asbeck, P.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 385 KB

english, 2013

3

Compact Models of Voltage Drops in Power Delivery Network for TSV-Based Three-Dimensional Integration

He, Huanyu, Lu, Jian-Qiang

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 500 KB

english, 2013

4

Simulation Study of Germanium p-Type Nanowire Schottky Barrier MOSFETs

Lee, Jaehyun, Shin, Mincheol

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 422 KB

english, 2013

5

An Etch-Stop Barrier Structure for GaN High-Electron-Mobility Transistors

Bin Lu,, Min Sun,, Palacios, T.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 635 KB

english, 2013

6

An 11%-Power-Conversion-Efficiency Organic–Inorganic Hybrid Solar Cell Achieved by Facile Organic Passivation

Liu, Dong, Zhang, Yunfang, Fang, Xiao, Zhang, Fute, Song, Tao, Sun, Baoquan

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 410 KB

english, 2013

7

Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz

Wang, Ronghua, Li, Guowang, Karbasian, Golnaz, Guo, Jia, Song, Bo, Yue, Yuanzheng, Hu, Zongyang, Laboutin, Oleg, Cao, Yu, Johnson, Wayne, Snider, Gregory, Fay, Patrick, Jena, Debdeep, Xing, Huili Grac

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 437 KB

english, 2013

8

Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 $^{\circ}\hbox{C}$

Veliadis, V., Steiner, B., Lawson, K., Bayne, S. B., Urciuoli, D., Ha, H. C., El-Hinnawy, N., Gupta, S., Borodulin, P., Howell, R. S., Scozzie, C.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 481 KB

english, 2013

9

1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform

Jiang, Qimeng, Liu, Cheng, Lu, Yunyou, Chen, Kevin J.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 537 KB

english, 2013

10

High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb Substrates

Plis, E., Klein, B., Myers, S., Gautam, N., Smith, E. P., Krishna, S.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 533 KB

english, 2013

11

Heterojunction-Free GaN Nanochannel FinFETs With High Performance

Im, Ki-Sik, Jo, Young-Woo, Lee, Jae-Hoon, Cristoloveanu, Sorin, Lee, Jung-Hee

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 341 KB

english, 2013

12

Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

Jurkovic, M., Gregusova, D., Palankovski, V., Hascik, Stefan, Blaho, M., Cico, K., Frohlich, K., Carlin, J., Grandjean, N., Kuzmik, J.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 329 KB

english, 2013

13

A Study on the Sign Inversion Behavior of Organic Magnetoresistance

Zhang, Tianyou, Zhao, Junqing, Yan, Xingwu, Peng, Qiming, Fu, Gang

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 152 KB

english, 2013

14

High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

Tang, Zhikai, Huang, Sen, Jiang, Qimeng, Liu, Shenghou, Liu, Cheng, Chen, Kevin J.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 615 KB

english, 2013

15

Modeling Erratic Bits Temperature Dependence for Monte Carlo Simulation of Flash Arrays

Zambelli, Cristian, Koebernik, Gert, Ullmann, Rudolf, Bauer, Matthias, Tempel, Georg, Olivo, Piero

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 136 KB

english, 2013

16

A Novel Charge-Trapping-Type Memory With Gate-All-Around Poly-Si Nanowire and HfAlO Trapping Layer

Lee, Ko-Hui, Lin, Horng-Chih, Huang, Tiao-Yuan

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 656 KB

english, 2013

17

High-Quality ICPCVD $\hbox{SiO}_{2}$ for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs

Park, Bong-Ryeol, Lee, Jae-Gil, Choi, Woojin, Kim, Hyungtak, Seo, Kwang-Seok, Cha, Ho-Young

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 364 KB

english, 2013

18

Improved Thermal Stability and Reduced Contact Resistance of Ohmic Contacts on N-Face n-Type GaN With Laser-Assisted Doping

Kim, Su Jin, Jeong, Tak, Kim, Tae Geun

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 335 KB

english, 2013

19

AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High- $k$ Oxynitride $\hbox{TaO}_{x} \hbox{N}_{y}$ Gate Dielectric

Sato, Taku, Okayasu, Junich, Takikawa, Masahiko, Suzuki, Toshi-kazu

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 472 KB

english, 2013

20

Influence of Guard-Ring Structure on the Dark Count Rates of Silicon Photomultipliers

Sul, Woo-Suk, Lee, Chae-Hun, Cho, Gyu-Seong

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 531 KB

english, 2013

21

Experimental and Simulated Cycling of ISFET Electric Fields for Drift Reset

Welch, David, Shah, Sahil, Ozev, Sule, Blain Christen, Jennifer

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 286 KB

english, 2013

22

New Subject Category on Emerging Technologies and Devices

Cressler, John D., Chatterjee, Amitava, Jindal, Renuka

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 22 KB

english, 2013

23

Fabrication of 340-GHz Folded Waveguides Using KMPR Photoresist

Li, Hanyan, Li, Yongtao, Feng, Jinjun

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 316 KB

english, 2013

24

Mechanism for Leakage Reduction by La Incorporation in a $\hbox{HfO}_{2}\hbox{/SiO}_{2}\hbox{/Si}$ Gate Stack

Manabe, Kenzo, Watanabe, Koji, Jagannathan, Hemanth, Paruchuri, Vamsi K.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 115 KB

english, 2013

25

Polarization-Induced Electric Fields Make Robust n-GaN/i-InGaN/p-GaN Solar Cells

Dickerson, Jeramy R., Pantzas, Konstantinos, Ougazzaden, Abdallah, Voss, Paul L.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 390 KB

english, 2013

26

Electron Trap Transformation Under Positive-Bias Temperature Stressing

Gao, Y., Ang, D. S., Bersuker, G., Young, C. D.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 325 KB

english, 2013

27

Effect of Interface States on the Performance of Antimonide nMOSFETs

Ali, Ashkar, Madan, Himanshu, Barth, Michael J., Boos, J. Brad, Bennett, Brian R., Datta, Suman

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 752 KB

english, 2013

28

A New Millimeter-Wave Fixture Deembedding Method Based on Generalized Cascade Network Model

Loo, X. S., Yeo, K. S., Chew, K. W. J., Chan, L. H. K., Ong, S. N., Do, M. A., Boon, C. C.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 323 KB

english, 2013

29

Corrections to “Demonstration of Addressable Organic Resistive Memory Utilizing a PC-Interface Memory Cell Tester” [Jan 13 51-53]

Cho, Byungjin, Song, Sunghoon, Ji, Yongsung, Choi, Ho-Gil, Ko, Heung Cho, Lee, Jae-Suk, Jung, Gun-Young, Lee, Takhee

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 27 KB

english, 2013

30

An Empirical Model for RRAM Resistance in Low- and High-Resistance States

Puglisi, Francesco M., Larcher, Luca, Bersuker, Gennadi, Padovani, Andrea, Pavan, Paolo

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 201 KB

english, 2013

31

Junction Engineering of 1T-DRAMs

Giusi, Gino, Iannaccone, Giuseppe

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 393 KB

english, 2013

32

Direct Impact of Chemical Bonding of Oxynitride on Boron Penetration and Electrical Oxide Hardening for Nanoscale Flash Memory

Kim, Taehoon, Koka, Sateesh, Surthi, Shyam, Zhuang, Kent

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 393 KB

english, 2013

33

$\hbox{GeO}_{2}$ Passivation for Low Surface Recombination Velocity on Ge Surface

Chen, Yen-Yu, Chang, H.-C., Chi, Y.-H., Huang, C.-H., Liu, C. W.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 485 KB

english, 2013

34

Ultraviolet Detector Based on $\hbox{SrZr}_{0.1} \hbox{Ti}_{0.9}\hbox{O}_{3}$ Film

Zhang, Min, Chen, Yu, Zhang, Haifeng, Chen, Weiyou, Lv, Kaibo, Ruan, Shengping

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 314 KB

english, 2013

35

Air-Gap Through-Silicon Vias

Huang, Cui, Chen, Qianwen, Wang, Zheyao

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 478 KB

english, 2013

36

A Dual-Junction Single-Photon Avalanche Diode in 130-nm CMOS Technology

Henderson, Robert K., Webster, Eric A. G., Grant, Lindsay A.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 495 KB

english, 2013

37

Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

Gong, Xiao, Han, Genquan, Bai, Fan, Su, Shaojian, Guo, Pengfei, Yang, Yue, Cheng, Ran, Zhang, Dongliang, Zhang, Guangze, Xue, Chunlai, Cheng, Buwen, Pan, Jisheng, Zhang, Zheng, Tok, Eng Soon, Antoniad

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 567 KB

english, 2013

38

On the Bipolar Resistive Switching Memory Using $ \hbox{TiN/Hf/HfO}_{2}/\hbox{Si}$ MIS Structure

Wu, Yung-Hsien, Wouters, Dirk J, Hendrickx, Paul, Zhang, Leqi, Chen, Yang Yin, Goux, Ludovic, Fantini, Andrea, Groeseneken, Guido, Jurczak, Malgorzata

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 321 KB

english, 2013

39

Analysis of Intrinsic Variation of Data Retention in Phase-Change Memory Using Phase-Field Method

Kwon, Yongwoo, Kang, Dae-Hwan, Lee, Keun-Ho, Park, Young-Kwan, Chung, Chil-Hee

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 411 KB

english, 2013

40

Electroluminescence Transition From Visible- to Ultraviolet-Dominant Mode in $\hbox{n-Mn}_{0.04}\hbox{Zn}_{0.96}\hbox{O/i-ZnGa}_{2}\hbox{O}_{4}\hbox{/} \hbox{n-GaN}$ Structure With Highly Ultraviolet Detection Performance

Zhou, Hai, Zhu, Yongdan, Wang, Hao, Chen, Xu, Fang, Guojia

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 262 KB

english, 2013

41

Enhanced Current Drive of Double-Gate $\alpha$-IGZO Thin-Film Transistors

Chen, Tsang-Long, Huang, Kuan-Chang, Lin, Hsuan-Yi, Chou, C. H., Lin, H. H., Liu, C. W.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 462 KB

english, 2013

42

Comprehensive Understanding on the Role of Tunnel Oxide Top Nitridation for the Reliability of Nanoscale Flash Memory

Kim, Taehoon, Sarpatwari, Karthik, Koka, Sateesh, Wang, Hongmei

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 367 KB

english, 2013

43

Determination of Ultimate Leakage Through Rutile $ \hbox{TiO}_{2}$ and Tetragonal $\hbox{ZrO}_{2}$ From Ab Initio Complex Band Calculations

Clima, Sergiu, Kaczer, B., Govoreanu, B., Popovici, M., Swerts, J., Verhulst, A. S., Jurczak, M., De Gendt, S., Pourtois, G.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 545 KB

english, 2013

44

Investigation on Performance and Vacuum Package of MEMS Infrared Focal Plane Arrays

Ou, Yi, Li, Zhigang, Qu, Furong, Yang, Kai, Liu, Yu, Chen, Dapeng, Ye, Tianchun

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 507 KB

english, 2013

45

Backside-Process-Induced Junction Leakage and Process Improvement of Cu TSV Based on Cu/Sn and BCB Hybrid Bonding

Chang, Yao-Jen, Ko, Cheng-Ta, Yu, Tsung-Han, Chiang, Cheng-Hao, Chen, Kuan-Neng

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 475 KB

english, 2013

46

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Chang, Kuan-Chang, Tsai, Tsung-Ming, Chang, Ting-Chang, Wu, Hsing-Hua, Chen, Jung-Hui, Syu, Yong-En, Chang, Geng-Wei, Chu, Tian-Jian, Liu, Guan-Ru, Su, Yu-Ting, Chen, Min-Chen, Pan, Jhih-Hong, Chen, J

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 413 KB

english, 2013

47

Changes to the Editorial Board

Chatterjee, Amitava

Journal:

IEEE Electron Device Letters

Year:

2013

File:

PDF, 19 KB

2013

48

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 65 KB

english, 2013

49

IEEE Electron Device Letters information for authors

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 112 KB

english, 2013

50

Special Issue on GaN Electronic Devices

Journal:

IEEE Electron Device Letters

Year:

2013

File:

PDF, 410 KB

2013

51

IEEE Electron Devices Society Meetings Calendar (As of 2/14/2013)

Journal:

IEEE Electron Device Letters

Year:

2013

File:

PDF, 59 KB

2013

52

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 72 KB

english, 2013

53

Changes to the Editorial Board

Chatterjee, Amitava

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 75 KB

english, 2013

54

[Blank page - back cover]

Journal:

IEEE Electron Device Letters

Year:

2013

File:

PDF, 5 KB

2013

55

Changes to the Editorial Board

Chatterjee, Amitava

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 72 KB

english, 2013

56

IEEE Journal of Electron Devices Society

Journal:

IEEE Electron Device Letters

Year:

2013

File:

PDF, 825 KB

2013

57

IEEE Electron Device Letters publication information

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 149 KB

english, 2013