Low-Temperature Transport Characteristics and...

IEEE Electron Device Letters 2007 / 10 Vol. 28; Iss. 10

Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET

Rustagi, Subhash C., Singh, N., Lim, Y. F., Zhang, G., Wang, S., Lo, G. Q., Balasubramanian, N., Kwong, D.-L.
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Volume:
28
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2007.904890
Date:
October, 2007
File:
PDF, 417 KB
english, 2007
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