Volume 28; Issue 10

IEEE Electron Device Letters

Volume 28; Issue 10

1

A Planar Gunn Diode Operating Above 100 GHz

Khalid, A., Pilgrim, N. J., Dunn, G. M., Holland, M. C., Stanley, C. R., Thayne, I. G., Cumming, D. R. S.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 192 KB

english, 2007

2

Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET

Rustagi, Subhash C., Singh, N., Lim, Y. F., Zhang, G., Wang, S., Lo, G. Q., Balasubramanian, N., Kwong, D.-L.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 417 KB

english, 2007

3

GaN-Based High-$Q$ Vertical-Cavity Light-Emitting Diodes

Lu, Tien-Chang, Kao, Tsung-Ting, Kao, Chih-Chiang, Chu, Jung-Tang, Yeh, Kang-Fan, Lin, Li-Fan, Peng, Yu-Chun, Huang, Hung-Wen, Kuo, Hao-Chung, Wang, Shing-Chung

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 203 KB

english, 2007

4

Kim, Tae Ho, Song, Chung Kun, Park, Jin Seong, Suh, Min Chul

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 179 KB

english, 2007

5

Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications

Chang, Chia-Yuan, Hsu, Heng-Tung, Chang, Edward Yi, Kuo, Chien-I, Datta, Suman, Radosavljevic, Marko, Miyamoto, Yasuyuki, Huang, Guo-Wei

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 370 KB

english, 2007

6

A Simple and Effective Approach to Improve the Output Linearity of Switched-Current AMOLED Pixel Circuitry

Guo, Xiaojun, Silva, S. R. P.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 285 KB

english, 2007

7

High-Performance and Low-Temperature-Compatible p-Channel Polycrystalline-Silicon TFTs Using Hafnium-Silicate Gate Dielectric

Yang, Ming-Jui, Chien, Chao-Hsin, Lu, Yi-Hsien, Luo, Guang-Li, Chiu, Su-Ching, Lou, Chun-Che, Huang, Tiao-Yuan

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 349 KB

english, 2007

8

A Wide Dynamic-Range CMOS Image Sensor Using Self-Reset Technique

Park, Dongwon, Rhee, Jehyuk, Joo, Youngjoong

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 316 KB

english, 2007

9

Impact of Preferential P-Diffusion Along the Grain Boundaries on Fine-Grained Polysilicon Solar Cells

Carnel, L., Gordon, I., Van Gestel, D., Vanhaeren, D., Eyben, P., Beaucarne, G., Poortmans, J.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 193 KB

english, 2007

10

Gate Based on GaAs/AlGaAs Three-Terminal Junctions

Muller, C. R., Worschech, L., Hopfner, P., Hofling, S., Forchel, A.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 223 KB

english, 2007

11

On the Origin of the Excess Low-Frequency Noise in Graded-Channel Silicon-on-Insulator nMOSFETs

Simoen, Eddy, Claeys, C., Chung, T. M., Flandre, D., Raskin, J.-P.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 156 KB

english, 2007

12

High-Current-Gain InP/GaInP/GaAsSb/InP DHBTs With $f_{T} = \hbox{436}\ \hbox{GHz}$

Liu, H. G., Ostinelli, O., Zeng, Y. P., Bolognesi, C. R.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 401 KB

english, 2007

13

Trigate FET Device Characteristics Improvement Using a Hydrogen Anneal Process With a Novel Hard Mask Approach

Zaman, Rownak J., Mathews, Kenneth, Xiong, Weize, Banerjee, Sanjay K.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 420 KB

english, 2007

14

Effect of Load Distribution on the Voltage Drop and the Luminance Variation in an AC-PDP

Kim, Jin-Sung, Lee, Hyuk-Jae

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 86 KB

english, 2007

15

A Program-Erasable High-$\kappa$$\hbox{Hf}_{0.3}{\hbox{N}}_{0.2}{\hbox{O}}_{0.5}$ MIS Capacitor With Good Retention

Yang, H. J., Chin, Albert, Chen, W. J., Cheng, C. F., Huang, W. L., Hsieh, I. J., McAlister, S. P.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 251 KB

english, 2007

16

Strained p-Channel FinFETs With Extended $\Pi$-Shaped Silicon–Germanium Source and Drain Stressors

Tan, Kian-Ming, Liow, Tsung-Yang, Lee, Rinus T. P., Hoe, Keat Mun, Tung, Chih-Hang, Balasubramanian, N., Samudra, Ganesh S., Yeo, Yee-Chia

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 335 KB

english, 2007

17

Reduction of Threshold Voltage by Diffusion Control Technique in p-MISFETs Using Poly-Si/TiN/HfSiON Gate Stacks

Kawahara, Takaaki, Nishida, Yukio, Sakashita, Shinsuke, Mizutani, Masaharu, Inoue, Masao, Yamanari, Shinichi, Higashi, Masahiko, Hayashi, Takashi, Murata, Naofumi, Honda, Kazuhito, Yugami, Jiro, Yoshi

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 92 KB

english, 2007

18

Active Pixel Concept Combined With Organic Photodiode for Imaging Devices

Tedde, S., Zaus, E. S., Furst, J., Henseler, D., Lugli, P.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 283 KB

english, 2007

19

Solution-Processed TIPS-Pentacene Organic Thin-Film-Transistor Circuits

Park, Sung Kyu, Anthony, John E., Jackson, Thomas N.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 236 KB

english, 2007

20

Anomalous Cells With Low Reset Resistance in Phase-Change-Memory Arrays

Mantegazza, Davide, Ielmini, Daniele, Pirovano, Agostino, Lacaita, Andrea L.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 208 KB

english, 2007

21

Enhanced Thermal Efficiency in Phase-Change Memory Cell by Double GST Thermally Confined Structure

Chao, Der-Sheng, Chen, Yi-Chan, Chen, Fred, Chen, Ming-Jung, Yen, Philip H., Lee, Chain-Ming, Chen, Wei-Su, Lien, Chenhsin, Kao, Ming-Jer, Tsai, Ming-Jinn

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 394 KB

english, 2007

22

NMOS Compatible Work Function of TaN Metal Gate With Erbium-Oxide-Doped Hafnium Oxide Gate Dielectric

Chen, Jingde, Wang, X. P., Li, Ming-Fu, Lee, S. J., Yu, M. B., Shen, C., Yeo, Yee-Chia

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 312 KB

english, 2007

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