Orientational Dependence in Device Performances of InAs and...

IEEE Transactions on Electron Devices 2013 / 1 Vol. 60; Iss. 1

Orientational Dependence in Device Performances of InAs and Si Nanowire MOSFETs Under Ballistic Transport

Shimoida, K., Yamada, Y., Tsuchiya, H., Ogawa, M.
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2012.2228199
Date:
January, 2013
File:
PDF, 1.04 MB
english, 2013
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