AlGaN-GaN Metal-Insulator-Semiconductor...

IEEE Electron Device Letters 2013 / 03 Vol. 34; Iss. 3

AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High- $k$ Oxynitride $\hbox{TaO}_{x} \hbox{N}_{y}$ Gate Dielectric

Sato, Taku, Okayasu, Junich, Takikawa, Masahiko, Suzuki, Toshi-kazu
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2012.2237499
Date:
March, 2013
File:
PDF, 472 KB
english, 2013
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