High-Temperature Performance of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect-Transistors
G. Simin, A. Tarakji, X. Hu, A. Koudymov, J. Yang, M. Asif Khan, M.S. Shur, R. GaskaVolume:
188
Year:
2001
Language:
english
Pages:
4
DOI:
10.1002/1521-396x(200111)188:13.0.co;2-l
File:
PDF, 80 KB
english, 2001