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Volume 188; Issue 1
Main
physica status solidi (a)
Volume 188; Issue 1
physica status solidi (a)
Volume 188; Issue 1
1
GaN-Based Light-Emitting Diodes and Laser Diodes, and Their Recent Progress
S. Nagahama
,
N. Iwasa
,
M. Senoh
,
T. Matsushita
,
Y. Sugimoto
,
H. Kiyoku
,
T. Kozaki
,
M. Sano
,
H. Matsumura
,
H. Umemoto
,
K. Chocho
,
T. Yanamoto
,
T. Mukai
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 87 KB
Your tags:
english, 2001
2
Estimation of Device Properties in AlGaInN-Based Laser Diodes by Time-Resolved Photoluminescence
T. Hino
,
T. Asano
,
T. Tojyo
,
S. Kijima
,
S. Tomiya
,
T. Miyajima
,
S. Uchida
,
M. Ikeda
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 207 KB
Your tags:
english, 2001
3
A High Injection Resonant Cavity Violet Light Emitting Diode Incorporating (Al,Ga)N Distributed Bragg Reflector
M. Diagne
,
Yiping He
,
H. Zhou
,
E. Makarona
,
A.V. Nurmikko
,
J. Han
,
T. Takeuchi
,
M. Krames
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 82 KB
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english, 2001
4
Correlation of Barrier Height and Nonradiative Carrier Recombination and the Consequences for Optical Gain in GaN Based Laser Structures
M. Vehse
,
P. Michler
,
I. Gösling
,
M. Röwe
,
J. Gutowski
,
S. Bader
,
A. Lell
,
G. Brüderl
,
V. Härle
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 92 KB
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english, 2001
5
Ten-Milliwatt Operation of an AlGaN-Based Light Emitting Diode Grown on GaN Substrate
T. Nishida
,
N. Kobayashi
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 503 KB
Your tags:
english, 2001
6
High-Efficiency GaN/AlxGa1—xN Multi-Quantum-Well Light Emitter Grown on Low-Dislocation Density AlxGa1—xN
M. Iwaya
,
S. Terao
,
T. Sano
,
S. Takanami
,
T. Ukai
,
R. Nakamura
,
S. Kamiyama
,
H. Amano
,
I. Akasaki
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 75 KB
Your tags:
english, 2001
7
High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
K. Tadatomo
,
H. Okagawa
,
Y. Ohuchi
,
T. Tsunekawa
,
T. Jyouichi
,
Y. Imada
,
M. Kato
,
H. Kudo
,
T. Taguchi
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 96 KB
Your tags:
english, 2001
8
Extraction Efficiency of GaN-Based LEDs
S.S. Schad
,
M. Scherer
,
M. Seyboth
,
V. Schwegler
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 83 KB
Your tags:
english, 2001
9
Electroabsorption Spectroscopy — Direct Determination of the Strong Piezoelectric Field in InGaN/GaN Heterostructure Diodes
P. Kiesel
,
F. Renner
,
M. Kneissl
,
N.M. Johnson
,
G.H. Döhler
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 97 KB
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english, 2001
10
Fabrication of 50–100 nm Patterned InGaN Blue Light Emitting Heterostructures
Lu Chen
,
Aijun Yin
,
J.-S. Im
,
A.V. Nurmikko
,
J.M. Xu
,
J. Han
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 117 KB
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english, 2001
11
A Matrix Addressable 1024 Element Blue Light Emitting InGaN QW Diode Array
I. Ozden
,
M. Diagne
,
A.V. Nurmikko
,
J. Han
,
T. Takeuchi
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 1.06 MB
Your tags:
english, 2001
12
Ultraviolet Pumped Tricolor Phosphor Blend White Emitting LEDs
U. Kaufmann
,
M. Kunzer
,
K. Köhler
,
H. Obloh
,
W. Pletschen
,
P. Schlotter
,
R. Schmidt
,
J. Wagner
,
A. Ellens
,
W. Rossner
,
M. Kobusch
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 264 KB
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english, 2001
13
Stripe Geometry Light Emitting Diodes over Pulsed Lateral Epitaxial Overgrown GaN for Solid State White Lighting
M. Shatalov
,
A. Chitnis
,
D. Basak
,
J.W. Yang
,
Q. Fareed
,
G. Simin
,
M. Asif Khan
,
R. Gaska
,
M.S. Shur
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 80 KB
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english, 2001
14
Performance of High-Power AlInGaN Light Emitting Diodes
A.Y. Kim
,
W. Götz
,
D.A. Steigerwald
,
J.J. Wierer
,
N.F. Gardner
,
J. Sun
,
S.A. Stockman
,
P.S. Martin
,
M.R. Krames
,
R.S. Kern
,
F.M. Steranka
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 187 KB
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english, 2001
15
InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates
B.J. Zhang
,
T. Egawa
,
H. Ishikawa
,
N. Nishikawa
,
T. Jimbo
,
M. Umeno
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 89 KB
Your tags:
english, 2001
16
Crack-Free InGaN/GaN Light Emitters on Si(111)
A. Dadgar
,
A. Alam
,
T. Riemann
,
J. Bläsing
,
A. Diez
,
M. Poschenrieder
,
M. Strassburg
,
M. Heuken
,
J. Christen
,
A. Krost
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 1014 KB
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english, 2001
17
Electroluminescence Studies of Nitride-Rich GaN1—xPx SQW Structure Grown by Laser-Assisted Metal-Organic Chemical Vapor Deposition
J. Kikawa
,
S. Yoshida
,
Y. Itoh
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 83 KB
Your tags:
english, 2001
18
Characteristics of InGaN/GaN Light-Emitting Diode with Si δ-Doped GaN Contact Layer
S.-R. Jeon
,
M.S. Jo
,
T.-V. Humg
,
G.M. Yang
,
H.K. Cho
,
J.Y. Lee
,
S.W. Hwang
,
S.J. Son
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 87 KB
Your tags:
english, 2001
19
Buried Tunnel Contact Junctions in GaN-Based Light-Emitting Diodes
S.-R. Jeon
,
Y.H. Song
,
H.J. Jang
,
K.S. Kim
,
G.M. Yang
,
S.W. Hwang
,
S.J. Son
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 839 KB
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english, 2001
20
Nuclear Microprobe Analysis of GaN Based Light Emitting Diodes
L. Hirsch
,
A.S. Barrière
,
P. Moretto
,
B. Damilano
,
N. Grandjean
,
J. Massies
,
J.Y. Duboz
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 117 KB
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english, 2001
21
The Silicon Nitride Film Formed by ECR-CVD for GaN-Based LED Passivation
K.M. Chang
,
C.C. Lang
,
C.C. Cheng
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 77 KB
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english, 2001
22
A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3:Eu3+ Luminescent Powders
G.A. Hirata
,
F. Ramos
,
R. Garcia
,
E.J. Bosze
,
J. McKittrick
,
F.A. Ponce
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 127 KB
Your tags:
english, 2001
23
High Current Gains Obtained by InGaN/GaN Double Heterojunction Bipolar Transistors
T. Makimoto
,
K. Kumakura
,
N. Kobayashi
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 85 KB
Your tags:
english, 2001
24
AlGaN Resonant Tunneling Diodes Grown by rf-MBE
A. Kikuchi
,
R. Bannai
,
K. Kishino
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 88 KB
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english, 2001
25
15 W AlGaN/GaN Heterojunction FET on Sapphire Substrate
Y. Ando
,
Y. Okamoto
,
H. Miyamoto
,
N. Hayama
,
T. Nakayama
,
K. Kasahara
,
Y. Ohno
,
M. Kuzuhara
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 98 KB
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english, 2001
26
Back Bias Effects in AlGaN/GaN HFETs
M.J. Uren
,
D. Herbert
,
T. Martin
,
B.T. Hughes
,
J. Birbeck
,
R. Balmer
,
A.J. Pidduck
,
S.K. Jones
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 91 KB
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english, 2001
27
AlGaN/GaN HEMT Optimization Using the RoundHEMT Technology
M. Marso
,
P. Javorka
,
A. Alam
,
M. Wolter
,
H. Hardtdegen
,
A. Fox
,
M. Heuken
,
P. Kordos
,
H. Lüth
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 82 KB
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english, 2001
28
Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate
H. Kim
,
V. Tilak
,
B.M. Green
,
J.A. Smart
,
W.J. Schaff
,
J.R. Shealy
,
L.F. Eastman
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 86 KB
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english, 2001
29
Temperature Dependence of High-Frequency Performances of AlGaN/GaN HEMTs
M. Akita
,
K. Kishimoto
,
T. Mizutani
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 105 KB
Your tags:
english, 2001
30
Kilovolt AlGaN/GaN HEMTs as Switching Devices
N.-Q. Zhang
,
B. Moran
,
S.P. DenBaars
,
U.K. Mishra
,
X.W. Wang
,
T.P. Ma
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 103 KB
Your tags:
english, 2001
31
High-Temperature Performance of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect-Transistors
G. Simin
,
A. Tarakji
,
X. Hu
,
A. Koudymov
,
J. Yang
,
M. Asif Khan
,
M.S. Shur
,
R. Gaska
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 80 KB
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english, 2001
32
AlGaN/GaN Heterostructure Field-Effect Transistors with High Al Compositions Fabricated with Selective-Area Regrowth
N. Maeda
,
T. Saitoh
,
K. Tusubaki
,
N. Kobayashi
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 77 KB
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english, 2001
33
Optimisation of AlGaN/GaN Heterostructures for Field Effect Transistors Grown by Metalorganic Vapour Phase Epitaxy
P.J. Parbrook
,
D.A. Wood
,
W.-S. Tan
,
P.A. Houston
,
G. Hill
,
C.R. Whitehouse
,
R.W. Martin
,
C. Trager-Cowan
,
A. Watt
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 87 KB
Your tags:
english, 2001
34
CW InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates
M. Kneissl
,
W.S. Wong
,
D.W. Treat
,
M. Teepe
,
N. Miyashita
,
N.M. Johnson
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 156 KB
Your tags:
english, 2001
35
Bias Stress Measurements on High Performance AlGaN/GaN HFET Devices
Y. Liu
,
J.A. Bardwell
,
S.P. McAlister
,
H. Tang
,
J.B. Webb
,
T.W. MacElwee
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 95 KB
Your tags:
english, 2001
36
Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs
B.P. Gila
,
J.W. Johnson
,
R. Mehandru
,
B. Luo
,
A.H. Onstine
,
V. Krishnamoorthy
,
S. Bates
,
C.R. Abernathy
,
F. Ren
,
S.J. Pearton
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 77 KB
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english, 2001
37
A High-Power GaN-Based Field-Effect Transistor for Large-Current Operation
S. Yoshida
,
H. Ishii
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 79 KB
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english, 2001
38
Characteristic Analysis of SAW Filters Fabricated Using GaN Thin Films
Hwan-Hee Jeong
,
Sun-Ki Kim
,
Young-Chul Jung
,
Hyun-Chul Choi
,
Jung-Hee Lee
,
Yong-Hyun Lee
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 153 KB
Your tags:
english, 2001
39
Quasi Two-Dimensional Modeling of GaN-Based MODFETs
F. Sacconi
,
A. Di Carlo
,
P. Lugli
,
H. Morkoç
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 82 KB
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english, 2001
40
Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics
D. Mistele
,
T. Rotter
,
Z. Bougrioua
,
K.S. Röver
,
F. Fedler
,
H. Klausing
,
J. Stemmer
,
O. K Semchinova
,
J. Aderhold
,
J. Graul
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 102 KB
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english, 2001
41
The Pinch-Off Behaviour and Charge Distribution in AlGaN–GaN–AlGaN–GaN Double Heterostructure Field Effect Transistors
M. Zervos
,
A. Kostopoulos
,
G. Constantinidis
,
M. Kayambaki
,
S. Mikroulis
,
N. Flytzanis
,
A. Georgakilas
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 83 KB
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english, 2001
42
Uniformity and Scalability of AlGaN/GaN HEMTs Using Stepper Lithography
R. Lossy
,
J. Hilsenbeck
,
J. Würfl
,
H. Obloh
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 80 KB
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english, 2001
43
Influence of Pinhole-Type Defects in AlGaN on rf Performance of AlGaN/GaN HFETs Grown by MOCVD
Jong-Wook Kim
,
Jae-Seung Lee
,
Jin-Ho Shin
,
Jae-Hoon Lee
,
Sung-Ho Hahm
,
Jung-Hee Lee
,
Chang-Seok Kim
,
Jae-Eung Oh
,
Moo-Whan Shin
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 252 KB
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english, 2001
44
Growth and Characterisation of High Electron Mobility Transistors on 4H-SiC by Ammonia Molecular Beam Epitaxy
J. Webb
,
Haipeng Tang
,
J.A. Bardwell
,
S. Rolfe
,
Ying Liu
,
J. Lapointe
,
P. Marshall
,
T.W. MacElwee
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 95 KB
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english, 2001
45
High Temperature RF Characterisation of SiN Passivated and Unpassivated AlGaN/GaN HFETs
I. Harrison
,
N.W. Clayton
,
N.J. Jeffs
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 66 KB
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english, 2001
46
The Effect of Surface Passivation and Illumination on the Device Properties of AlGaN/GaN HFETs
B.J. Ansell
,
I. Harrison
,
C.T. Foxon
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 144 KB
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english, 2001
47
High Quantum Efficiency at Low Bias AlxGa1–xN p–i–n Photodiodes
J.C. Campbell
,
C.J. Collins
,
M.M. Wong
,
U. Chowdhury
,
A.L. Beck
,
R.D. Dupuis
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 99 KB
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english, 2001
48
AlGaN UV Focal Plane Arrays
P. Lamarre
,
A. Hairston
,
S.P. Tobin
,
K.K. Wong
,
A.K. Sood
,
M.B. Reine
,
M. Pophristic
,
R. Birkham
,
I.T. Ferguson
,
R. Singh
,
C.R. Eddy Jr.
,
U. Chowdhury
,
M.M. Wong
,
R.D. Dupuis
,
P. Kozodoy
,
E.J. Tarsa
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 319 KB
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english, 2001
49
Demonstration of Flame Detection in Room Light Background by Solar-Blind AlGaN PIN Photodiode
A. Hirano
,
C. Pernot
,
M. Iwaya
,
T. Detchprohm
,
H. Amano
,
I. Akasaki
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 182 KB
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english, 2001
50
Solar-Blind p-GaN/i-AlGaN/n-AlGaN Ultraviolet Photodiodes on SiC Substrate
G. Parish
,
M. Hansen
,
B. Moran
,
S. Keller
,
S.P. DenBaars
,
U.K. Mishra
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 107 KB
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english, 2001
51
GaN and AlxGa1—xN p–i–n High-Voltage Rectifiers Grown by Metalorganic Chemical Vapor Deposition
T.G. Zhu
,
U. Chowdhury
,
M.M. Wong
,
K.S. Kim
,
J.C. Denyszyn
,
R.D. Dupuis
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 115 KB
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english, 2001
52
Effect of Dielectric Layers on the Performance of AlGaN-Based UV Schottky Photodiodes
E. Monroy
,
F. Calle
,
J.L. Pau
,
E. Muñoz
,
M. Verdú
,
F.J. Sánchez
,
M.T. Montojo
,
F. Omnès
,
Z. Bougrioua
,
I. Moerman
,
E. San Andrés
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 87 KB
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english, 2001
53
GaN HFETs on SiC Substrates Grown by Nitrogen Plasma MBE
M. Micovic
,
J.S. Moon
,
T. Hussain
,
P. Hashimoto
,
W.S. Wong
,
L. McCray
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 90 KB
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english, 2001
54
Effects of Band Tail Absorption on AlGaN-Based Ultraviolet Photodiodes
J.J. Kuek
,
D.L. Pulfrey
,
B.D. Nener
,
J.M. Dell
,
G. Parish
,
U.K. Mishra
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 113 KB
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english, 2001
55
AlGaN-Based Photodetectors Grown by Gas Source Molecular Beam Epitaxy with Ammonia
V.V. Kuryatkov
,
G.D. Kipshidze
,
S.A. Nikishin
,
P.W. Deelman
,
H. Temkin
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 75 KB
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english, 2001
56
Resonant-Cavity-Enhanced UV Metal–Semiconductor–Metal (MSM) Photodetectors Based on AlGaN System
K. Kishino
,
M. Yonemaru
,
A. Kikuchi
,
Y. Toyoura
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 94 KB
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english, 2001
57
High Performance Solar Blind Detectors Based on AlGaN Grown by MBE on Si
J.-Y. Duboz
,
J.-L. Reverchon
,
D. Adam
,
B. Damilano
,
F. Semond
,
N. Grandjean
,
J. Massies
Journal:
physica status solidi (a)
Year:
2001
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english
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58
Visible-Blind Metal–Semiconductor–Metal Ultra-Violet Detectors Based on Epitaxially Laterally Overgrown Gallium Nitride
Wenhua Gu
,
Soo Jin Chua
,
Xin Hai Zhang
,
Mao Sheng Hao
,
Ji Zhang
,
Wen Wang
,
Wei Liu
Journal:
physica status solidi (a)
Year:
2001
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english
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59
High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition
M.M. Wong
,
U. Chowdhury
,
C.J. Collins
,
B. Yang
,
J.C. Denyszyn
,
K.S. Kim
,
J.C. Campbell
,
R.D. Dupuis
Journal:
physica status solidi (a)
Year:
2001
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english
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60
Characterization of GaN Based UV-VUV Detectors in the Range 3.4–25 eV by Using Synchrotron Radiation
A. Motogaito
,
K. Ohta
,
K. Hiramatsu
,
Y. Ohuchi
,
K. Tadatomo
,
Y. Hamamura
,
K. Fukui
Journal:
physica status solidi (a)
Year:
2001
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english
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61
Superior Characteristics of RuO2/GaN Schottky-Type UV Photodetector
Sang-Hoon Shin
,
Byung-Kwon Jung
,
Jae-Hoon Lee
,
Myoung-Bok Lee
,
Jung-Hee Lee
,
Yong-Hyun Lee
,
Sung-Ho Hahm
Journal:
physica status solidi (a)
Year:
2001
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english
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62
Vertical versus Lateral GaN Schottky Ultraviolet Detectors and Their Gain Mechanism
O. Katz
,
V. Garber
,
B. Meyler
,
G. Bahir
,
J. Salzman
Journal:
physica status solidi (a)
Year:
2001
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english
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63
AlN/GaN Metal Insulator Semiconductor Field Effect Transistor Using Wet Chemical Etching with Hot Phosphoric Acid
T. Ide
,
M. Shimizu
,
A. Suzuki
,
X.-Q. Shen
,
H. Okumura
,
T. Nemoto
Journal:
physica status solidi (a)
Year:
2001
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english
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64
Mass Transport Regrowth of GaN for Ohmic Contacts to AlGaN/GaN
S. Heikman
,
S. Keller
,
B. Moran
,
R. Coffie
,
S.P. DenBaars
,
U.K. Mishra
Journal:
physica status solidi (a)
Year:
2001
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english
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65
Novel Polarization Enhanced Ohmic Contacts to n-Type GaN
Yun-Li Li
,
J.W. Graff
,
E.L. Waldron
,
Th. Gessmann
,
E.F. Schubert
Journal:
physica status solidi (a)
Year:
2001
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english
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66
Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer
K. Kumakura
,
T. Makimoto
,
N. Kobayashi
Journal:
physica status solidi (a)
Year:
2001
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english
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67
Reliability of Schottky Contacts on AlGaN
E. Monroy
,
F. Calle
,
T. Palacios
,
J. Sánchez-Osorio
,
M. Verdú
,
F.J. Sánchez
,
M.T. Montojo
,
F. Omnès
,
Z. Bougrioua
,
I. Moerman
,
P. Ruterana
Journal:
physica status solidi (a)
Year:
2001
Language:
english
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68
Progress in Growth and Physics of Nitride-Based Quantum Dots
Y. Arakawa
Journal:
physica status solidi (a)
Year:
2001
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english
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69
Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer
S. Ootomo
,
T. Hashizume
,
H. Hasegawa
Journal:
physica status solidi (a)
Year:
2001
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english
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70
Effects of Annealing on the Interface Properties between Ni and p-GaN
T. Maruyama
,
Y. Hagio
,
T. Miyajima
,
S. Kijima
,
Y. Nanishi
,
K. Akimoto
Journal:
physica status solidi (a)
Year:
2001
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english
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71
Au Catalyzed Structural and Electrical Evolution of Ni/Au Contact to GaN
C.C. Kim
,
J.K. Kim
,
J.-L. Lee
,
J.H. Je
,
M.S. Yi
,
D.Y. Noh
,
Y. Hwu
,
P. Ruterana
Journal:
physica status solidi (a)
Year:
2001
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english
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72
Nanometer-Scale Conversion of Si3N4 to SiOx for Applications in Lithography, Micromachining, and Selective-Area CVD
S. Gwo
,
T.T. Chen
,
T. Yasuda
,
S. Yamasaki
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
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73
Effect of Various Pre-Treatments on Ti/Al/Ti/Au Ohmic Contacts for AlGaN/GaN HFET Devices
J.A. Bardwell
,
Ying Liu
,
S. Rauhala
,
P. Bouwhuis
,
P. Marshall
,
H. Tang
,
J.B. Webb
Journal:
physica status solidi (a)
Year:
2001
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english
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74
The Link between Gallium Vacancies and Plasma Damage to n-Type GaN
H.W. Choi
,
S.J. Chua
Journal:
physica status solidi (a)
Year:
2001
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english
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75
Surface Modification and Ohmic Contact Formation to n and p-Type GaN
H.W. Choi
,
S.J. Chua
,
X.J. Kang
Journal:
physica status solidi (a)
Year:
2001
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english
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76
Allowable Substrate Bias for the Etching of n-GaN in Photo-Enhanced Electrochemical Etching
J.W. Seo
,
C.S. Oh
,
J.W. Yang
,
G.M. Yang
,
K.Y. Lim
,
C.J. Yoon
,
H.J. Lee
Journal:
physica status solidi (a)
Year:
2001
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english
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77
Thermodynamic Assessment of the Gallium–Nitrogen System
A.V. Davydov
,
W.J. Boettinger
,
U.R. Kattner
,
T.J. Anderson
Journal:
physica status solidi (a)
Year:
2001
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english
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78
Characterization of 2.5-Inch Diameter Bulk GaN Grown from Melt-Solution
V. Soukhoveev
,
V. Ivantsov
,
Yu. Melnik
,
A. Davydov
,
D. Tsvetkov
,
K. Tsvetkova
,
I. Nikitina
,
A. Zubrilov
,
A. Lavrentiev
,
V. Dmitriev
Journal:
physica status solidi (a)
Year:
2001
Language:
english
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79
Growth of AlxGa1–xN and InyGa1–yN Single Crystals Using the Na Flux Method
K. Yasui
,
G.K. Kishor
,
H. Yamane
,
T. Akahane
Journal:
physica status solidi (a)
Year:
2001
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english
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80
Growth and Characterization of High Quality Continuous GaN Films on Si-Doped Cracked GaN Templates
S.J. Chua
,
M. Hao
,
J. Zhang
,
E.K. Sia
Journal:
physica status solidi (a)
Year:
2001
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english
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81
Effects of Substrate Pretreatment and Buffer Layers on GaN Epilayers Grown by Hydride Vapor Phase Epitaxy
W. Zhang
,
H.R. Alves
,
J. Blaesing
,
T. Riemann
,
M. Heuken
,
P. Veit
,
D. Pfisterer
,
R. Gregor
,
D.M. Hofmann
,
A. Krost
,
J. Christen
,
B.K. Meyer
Journal:
physica status solidi (a)
Year:
2001
Language:
english
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82
Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by Hydride Vapor Phase Epitaxy (HVPE)
D. Tsvetkov
,
Yu. Melnik
,
A. Davydov
,
A. Shapiro
,
O. Kovalenkov
,
J.B. Lam
,
J.J. Song
,
V. Dmitriev
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
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83
Properties of Si-Doped GaN Layers Grown by HVPE
A.V. Fomin
,
A.E. Nikolaev
,
I.P. Nikitina
,
A.S. Zubrilov
,
M.G. Mynbaeva
,
N.I. Kuznetsov
,
A.P. Kovarsky
,
B.Ja. Ber
,
D.V. Tsvetkov
Journal:
physica status solidi (a)
Year:
2001
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english
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84
Direct Growth of GaN on (0001) Sapphire by Low Pressure Hydride Vapour Phase Epitaxy
E. Richter
,
S. Gramlich
,
A. Klein
,
E. Nebauer
,
I. Rechenberg
,
U. Zeimer
,
M. Weyers
Journal:
physica status solidi (a)
Year:
2001
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english
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85
Polarity Inversion during Halide VPE Growth of GaN on GaAs(111)B-As Surface at High Temperatures
F. Hasegawa
,
M. Namerikawa
,
O. Takahashi
,
R. Souda
Journal:
physica status solidi (a)
Year:
2001
Language:
english
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86
Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN
T. Paskova
,
P.P. Paskov
,
E.M. Goldys
,
V. Darakchieva
,
U. Södervall
,
M. Godlewski
,
M. Zielinski
,
E. Valcheva
,
C.F. Carlström
,
Q. Wahab
,
B. Monemar
Journal:
physica status solidi (a)
Year:
2001
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english
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87
Flow Modulation Growth of Thick GaN by Hydride Vapor Phase Epitaxy
W. Zhang
,
T. Riemann
,
H.R. Alves
,
M. Heuken
,
P. Veit
,
D. Pfisterer
,
D.M. Hofmann
,
J. Blaesing
,
A. Krost
,
J. Christen
,
B.K. Meyer
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
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88
Detection and Identification of Donors in Hydride-Vapor-Phase Epitaxial GaN Layers
J.A. Freitas Jr.
,
G.C.B. Braga
,
W.J. Moore
,
K.Y. Lee
,
I.J. Song
,
R.J. Molnar
,
P. Van Lierde
Journal:
physica status solidi (a)
Year:
2001
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english
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89
Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy
Yu. Melnik
,
D. Tsvetkov
,
A. Pechnikov
,
I. Nikitina
,
N. Kuznetsov
,
V. Dmitriev
Journal:
physica status solidi (a)
Year:
2001
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english
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90
Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2
M.A. Mastro
,
O.M. Kryliouk
,
M.D. Reed
,
T.J. Anderson
,
A. Davydov
,
A. Shapiro
Journal:
physica status solidi (a)
Year:
2001
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english
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91
A Band-Tail Model for InGaN Alloy System and Design for Quantum Well Laser Operation
A.A. Yamaguchi
,
M. Kuramoto
,
M. Nido
,
M. Mizuta
Journal:
physica status solidi (a)
Year:
2001
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english
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92
Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy
V. Kirilyuk
,
P.R. Hageman
,
P.C.M. Christianen
,
W.H.M. Corbeek
,
M. Zielinski
,
L. Macht
,
J.L. Weyher
,
P.K. Larsen
Journal:
physica status solidi (a)
Year:
2001
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english
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93
Novel Techniques for Stabilizing Transverse Mode in AlGaInN-Based Laser Diodes
S. Kijima
,
T. Tojyo
,
S. Goto
,
M. Takeya
,
T. Asano
,
T. Hino
,
S. Uchida
,
M. Ikeda
Journal:
physica status solidi (a)
Year:
2001
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english
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94
Systematics of Optical Gain in GaInN/GaN Laser Structures
S. Heppel
,
A. Hangleiter
,
S. Bader
,
G. Brüderl
,
A. Weimar
,
V. Kümmler
,
A. Lell
,
V. Härle
,
J. Off
,
B. Kuhn
,
F. Scholz
Journal:
physica status solidi (a)
Year:
2001
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english
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95
Influence of the Transverse and Lateral Waveguide on the Far Field Pattern in GaN Based Laser Structures
M. Röwe
,
P. Michler
,
J. Gutowski
,
S. Bader
,
G. Brüderl
,
V. Kümmler
,
A. Weimar
,
A. Lell
,
V. Härle
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
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96
Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers
S. Tomiya
,
H. Nakajima
,
K. Funato
,
T. Miyajima
,
K. Kobayashi
,
T. Hino
,
S. Kijima
,
T. Asano
,
M. Ikeda
Journal:
physica status solidi (a)
Year:
2001
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english
File:
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97
Growth, Optical and Structural Characterization of InGaN/GaN/AlGaN Optically Pumped Lasers
W.V. Lundin
,
A.V. Sakharov
,
A.S. Usikov
,
D.A. Bedarev
,
A.F. Tsatsulnikov
,
Ru Chin Tu
,
Sun Bin Yin
,
Jim Y. Chi
Journal:
physica status solidi (a)
Year:
2001
Language:
english
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98
Multiple Quantum Well InGaN/GaN Blue Optically Pumped Lasers Operating in the Spectral Range of 450–470 nm
G.P. Yablonskii
,
E.V. Lutsenko
,
V.N. Pavlovskii
,
I.P. Marko
,
A.L. Gurskii
,
V.Z. Zubialevich
,
O. Schön
,
H. Protzmann
,
M. Lünenbürger
,
B. Schineller
,
M. Heuken
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
PDF, 94 KB
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99
Growth and Optical Properties of Quaternary InAlGaN for 300 nm Band UV-Emitting Devices
H. Hirayama
,
A. Kinoshita
,
A. Hirata
,
Y. Aoyagi
Journal:
physica status solidi (a)
Year:
2001
Language:
english
File:
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100
GaN-Based MQW Light Emitting Devices
M. Koike
,
S. Nagai
,
S. Yamasaki
,
Y. Tezen
,
A. Kojima
,
S. Iwayama
Journal:
physica status solidi (a)
Year:
2001
Language:
english
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101
Laser-Like Emission in the Blue-Green Spectral Range from InGaN/GaN/AlGaN Structures under Optical Pumping
A.V. Sakharov
,
A.S. Usikov
,
W.V. Lundin
,
D.A. Bedarev
,
A.F. Tsatsulnikov
,
E.E. Zavarin
,
A.I. Besulkin
,
N.N. Ledentsov
,
D. Bimberg
Journal:
physica status solidi (a)
Year:
2001
Language:
english
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102
Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters
J.P. Zhang
,
E. Kuokstis
,
Q. Fareed
,
H.M. Wang
,
J.W. Yang
,
G. Simin
,
M. Asif Khan
,
G. Tamulaitis
,
G. Kurilcik
,
S. Jursenas
,
A. Zukauskas
,
R. Gaska
,
M. Shur
Journal:
physica status solidi (a)
Year:
2001
Language:
english
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PDF, 98 KB
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