Volume 188; Issue 1

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physica status solidi (a)
Volume 188; Issue 1

physica status solidi (a)

Volume 188; Issue 1

1

GaN-Based Light-Emitting Diodes and Laser Diodes, and Their Recent Progress

S. Nagahama, N. Iwasa, M. Senoh, T. Matsushita, Y. Sugimoto, H. Kiyoku, T. Kozaki, M. Sano, H. Matsumura, H. Umemoto, K. Chocho, T. Yanamoto, T. Mukai

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 87 KB

english, 2001

2

Estimation of Device Properties in AlGaInN-Based Laser Diodes by Time-Resolved Photoluminescence

T. Hino, T. Asano, T. Tojyo, S. Kijima, S. Tomiya, T. Miyajima, S. Uchida, M. Ikeda

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 207 KB

english, 2001

3

A High Injection Resonant Cavity Violet Light Emitting Diode Incorporating (Al,Ga)N Distributed Bragg Reflector

M. Diagne, Yiping He, H. Zhou, E. Makarona, A.V. Nurmikko, J. Han, T. Takeuchi, M. Krames

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 82 KB

english, 2001

4

Correlation of Barrier Height and Nonradiative Carrier Recombination and the Consequences for Optical Gain in GaN Based Laser Structures

M. Vehse, P. Michler, I. Gösling, M. Röwe, J. Gutowski, S. Bader, A. Lell, G. Brüderl, V. Härle

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 92 KB

english, 2001

5

Ten-Milliwatt Operation of an AlGaN-Based Light Emitting Diode Grown on GaN Substrate

T. Nishida, N. Kobayashi

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 503 KB

english, 2001

6

High-Efficiency GaN/AlxGa1—xN Multi-Quantum-Well Light Emitter Grown on Low-Dislocation Density AlxGa1—xN

M. Iwaya, S. Terao, T. Sano, S. Takanami, T. Ukai, R. Nakamura, S. Kamiyama, H. Amano, I. Akasaki

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 75 KB

english, 2001

7

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, T. Jyouichi, Y. Imada, M. Kato, H. Kudo, T. Taguchi

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 96 KB

english, 2001

8

Extraction Efficiency of GaN-Based LEDs

S.S. Schad, M. Scherer, M. Seyboth, V. Schwegler

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 83 KB

english, 2001

9

Electroabsorption Spectroscopy — Direct Determination of the Strong Piezoelectric Field in InGaN/GaN Heterostructure Diodes

P. Kiesel, F. Renner, M. Kneissl, N.M. Johnson, G.H. Döhler

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 97 KB

english, 2001

10

Fabrication of 50–100 nm Patterned InGaN Blue Light Emitting Heterostructures

Lu Chen, Aijun Yin, J.-S. Im, A.V. Nurmikko, J.M. Xu, J. Han

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 117 KB

english, 2001

11

A Matrix Addressable 1024 Element Blue Light Emitting InGaN QW Diode Array

I. Ozden, M. Diagne, A.V. Nurmikko, J. Han, T. Takeuchi

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 1.06 MB

english, 2001

12

Ultraviolet Pumped Tricolor Phosphor Blend White Emitting LEDs

U. Kaufmann, M. Kunzer, K. Köhler, H. Obloh, W. Pletschen, P. Schlotter, R. Schmidt, J. Wagner, A. Ellens, W. Rossner, M. Kobusch

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 264 KB

english, 2001

13

Stripe Geometry Light Emitting Diodes over Pulsed Lateral Epitaxial Overgrown GaN for Solid State White Lighting

M. Shatalov, A. Chitnis, D. Basak, J.W. Yang, Q. Fareed, G. Simin, M. Asif Khan, R. Gaska, M.S. Shur

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 80 KB

english, 2001

14

Performance of High-Power AlInGaN Light Emitting Diodes

A.Y. Kim, W. Götz, D.A. Steigerwald, J.J. Wierer, N.F. Gardner, J. Sun, S.A. Stockman, P.S. Martin, M.R. Krames, R.S. Kern, F.M. Steranka

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 187 KB

english, 2001

15

InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates

B.J. Zhang, T. Egawa, H. Ishikawa, N. Nishikawa, T. Jimbo, M. Umeno

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 89 KB

english, 2001

16

Crack-Free InGaN/GaN Light Emitters on Si(111)

A. Dadgar, A. Alam, T. Riemann, J. Bläsing, A. Diez, M. Poschenrieder, M. Strassburg, M. Heuken, J. Christen, A. Krost

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 1014 KB

english, 2001

17

Electroluminescence Studies of Nitride-Rich GaN1—xPx SQW Structure Grown by Laser-Assisted Metal-Organic Chemical Vapor Deposition

J. Kikawa, S. Yoshida, Y. Itoh

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 83 KB

english, 2001

18

Characteristics of InGaN/GaN Light-Emitting Diode with Si δ-Doped GaN Contact Layer

S.-R. Jeon, M.S. Jo, T.-V. Humg, G.M. Yang, H.K. Cho, J.Y. Lee, S.W. Hwang, S.J. Son

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 87 KB

english, 2001

19

Buried Tunnel Contact Junctions in GaN-Based Light-Emitting Diodes

S.-R. Jeon, Y.H. Song, H.J. Jang, K.S. Kim, G.M. Yang, S.W. Hwang, S.J. Son

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 839 KB

english, 2001

20

Nuclear Microprobe Analysis of GaN Based Light Emitting Diodes

L. Hirsch, A.S. Barrière, P. Moretto, B. Damilano, N. Grandjean, J. Massies, J.Y. Duboz

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 117 KB

english, 2001

21

The Silicon Nitride Film Formed by ECR-CVD for GaN-Based LED Passivation

K.M. Chang, C.C. Lang, C.C. Cheng

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 77 KB

english, 2001

22

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3:Eu3+ Luminescent Powders

G.A. Hirata, F. Ramos, R. Garcia, E.J. Bosze, J. McKittrick, F.A. Ponce

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 127 KB

english, 2001

23

High Current Gains Obtained by InGaN/GaN Double Heterojunction Bipolar Transistors

T. Makimoto, K. Kumakura, N. Kobayashi

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 85 KB

english, 2001

24

AlGaN Resonant Tunneling Diodes Grown by rf-MBE

A. Kikuchi, R. Bannai, K. Kishino

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 88 KB

english, 2001

25

15 W AlGaN/GaN Heterojunction FET on Sapphire Substrate

Y. Ando, Y. Okamoto, H. Miyamoto, N. Hayama, T. Nakayama, K. Kasahara, Y. Ohno, M. Kuzuhara

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 98 KB

english, 2001

26

Back Bias Effects in AlGaN/GaN HFETs

M.J. Uren, D. Herbert, T. Martin, B.T. Hughes, J. Birbeck, R. Balmer, A.J. Pidduck, S.K. Jones

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 91 KB

english, 2001

27

AlGaN/GaN HEMT Optimization Using the RoundHEMT Technology

M. Marso, P. Javorka, A. Alam, M. Wolter, H. Hardtdegen, A. Fox, M. Heuken, P. Kordos, H. Lüth

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 82 KB

english, 2001

28

Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate

H. Kim, V. Tilak, B.M. Green, J.A. Smart, W.J. Schaff, J.R. Shealy, L.F. Eastman

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 86 KB

english, 2001

29

Temperature Dependence of High-Frequency Performances of AlGaN/GaN HEMTs

M. Akita, K. Kishimoto, T. Mizutani

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 105 KB

english, 2001

30

Kilovolt AlGaN/GaN HEMTs as Switching Devices

N.-Q. Zhang, B. Moran, S.P. DenBaars, U.K. Mishra, X.W. Wang, T.P. Ma

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 103 KB

english, 2001

31

High-Temperature Performance of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect-Transistors

G. Simin, A. Tarakji, X. Hu, A. Koudymov, J. Yang, M. Asif Khan, M.S. Shur, R. Gaska

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 80 KB

english, 2001

32

AlGaN/GaN Heterostructure Field-Effect Transistors with High Al Compositions Fabricated with Selective-Area Regrowth

N. Maeda, T. Saitoh, K. Tusubaki, N. Kobayashi

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 77 KB

english, 2001

33

Optimisation of AlGaN/GaN Heterostructures for Field Effect Transistors Grown by Metalorganic Vapour Phase Epitaxy

P.J. Parbrook, D.A. Wood, W.-S. Tan, P.A. Houston, G. Hill, C.R. Whitehouse, R.W. Martin, C. Trager-Cowan, A. Watt

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 87 KB

english, 2001

34

CW InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates

M. Kneissl, W.S. Wong, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 156 KB

english, 2001

35

Bias Stress Measurements on High Performance AlGaN/GaN HFET Devices

Y. Liu, J.A. Bardwell, S.P. McAlister, H. Tang, J.B. Webb, T.W. MacElwee

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 95 KB

english, 2001

36

Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

B.P. Gila, J.W. Johnson, R. Mehandru, B. Luo, A.H. Onstine, V. Krishnamoorthy, S. Bates, C.R. Abernathy, F. Ren, S.J. Pearton

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 77 KB

english, 2001

37

A High-Power GaN-Based Field-Effect Transistor for Large-Current Operation

S. Yoshida, H. Ishii

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 79 KB

english, 2001

38

Characteristic Analysis of SAW Filters Fabricated Using GaN Thin Films

Hwan-Hee Jeong, Sun-Ki Kim, Young-Chul Jung, Hyun-Chul Choi, Jung-Hee Lee, Yong-Hyun Lee

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 153 KB

english, 2001

39

Quasi Two-Dimensional Modeling of GaN-Based MODFETs

F. Sacconi, A. Di Carlo, P. Lugli, H. Morkoç

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 82 KB

english, 2001

40

Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics

D. Mistele, T. Rotter, Z. Bougrioua, K.S. Röver, F. Fedler, H. Klausing, J. Stemmer, O. K Semchinova, J. Aderhold, J. Graul

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 102 KB

english, 2001

41

The Pinch-Off Behaviour and Charge Distribution in AlGaN–GaN–AlGaN–GaN Double Heterostructure Field Effect Transistors

M. Zervos, A. Kostopoulos, G. Constantinidis, M. Kayambaki, S. Mikroulis, N. Flytzanis, A. Georgakilas

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 83 KB

english, 2001

42

Uniformity and Scalability of AlGaN/GaN HEMTs Using Stepper Lithography

R. Lossy, J. Hilsenbeck, J. Würfl, H. Obloh

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 80 KB

english, 2001

43

Influence of Pinhole-Type Defects in AlGaN on rf Performance of AlGaN/GaN HFETs Grown by MOCVD

Jong-Wook Kim, Jae-Seung Lee, Jin-Ho Shin, Jae-Hoon Lee, Sung-Ho Hahm, Jung-Hee Lee, Chang-Seok Kim, Jae-Eung Oh, Moo-Whan Shin

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 252 KB

english, 2001

44

Growth and Characterisation of High Electron Mobility Transistors on 4H-SiC by Ammonia Molecular Beam Epitaxy

J. Webb, Haipeng Tang, J.A. Bardwell, S. Rolfe, Ying Liu, J. Lapointe, P. Marshall, T.W. MacElwee

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 95 KB

english, 2001

45

High Temperature RF Characterisation of SiN Passivated and Unpassivated AlGaN/GaN HFETs

I. Harrison, N.W. Clayton, N.J. Jeffs

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 66 KB

english, 2001

46

The Effect of Surface Passivation and Illumination on the Device Properties of AlGaN/GaN HFETs

B.J. Ansell, I. Harrison, C.T. Foxon

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 144 KB

english, 2001

47

High Quantum Efficiency at Low Bias AlxGa1–xN p–i–n Photodiodes

J.C. Campbell, C.J. Collins, M.M. Wong, U. Chowdhury, A.L. Beck, R.D. Dupuis

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 99 KB

english, 2001

48

AlGaN UV Focal Plane Arrays

P. Lamarre, A. Hairston, S.P. Tobin, K.K. Wong, A.K. Sood, M.B. Reine, M. Pophristic, R. Birkham, I.T. Ferguson, R. Singh, C.R. Eddy Jr., U. Chowdhury, M.M. Wong, R.D. Dupuis, P. Kozodoy, E.J. Tarsa

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 319 KB

english, 2001

49

Demonstration of Flame Detection in Room Light Background by Solar-Blind AlGaN PIN Photodiode

A. Hirano, C. Pernot, M. Iwaya, T. Detchprohm, H. Amano, I. Akasaki

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 182 KB

english, 2001

50

Solar-Blind p-GaN/i-AlGaN/n-AlGaN Ultraviolet Photodiodes on SiC Substrate

G. Parish, M. Hansen, B. Moran, S. Keller, S.P. DenBaars, U.K. Mishra

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 107 KB

english, 2001

51

GaN and AlxGa1—xN p–i–n High-Voltage Rectifiers Grown by Metalorganic Chemical Vapor Deposition

T.G. Zhu, U. Chowdhury, M.M. Wong, K.S. Kim, J.C. Denyszyn, R.D. Dupuis

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 115 KB

english, 2001

52

Effect of Dielectric Layers on the Performance of AlGaN-Based UV Schottky Photodiodes

E. Monroy, F. Calle, J.L. Pau, E. Muñoz, M. Verdú, F.J. Sánchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, E. San Andrés

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 87 KB

english, 2001

53

GaN HFETs on SiC Substrates Grown by Nitrogen Plasma MBE

M. Micovic, J.S. Moon, T. Hussain, P. Hashimoto, W.S. Wong, L. McCray

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 90 KB

english, 2001

54

Effects of Band Tail Absorption on AlGaN-Based Ultraviolet Photodiodes

J.J. Kuek, D.L. Pulfrey, B.D. Nener, J.M. Dell, G. Parish, U.K. Mishra

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 113 KB

english, 2001

55

AlGaN-Based Photodetectors Grown by Gas Source Molecular Beam Epitaxy with Ammonia

V.V. Kuryatkov, G.D. Kipshidze, S.A. Nikishin, P.W. Deelman, H. Temkin

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 75 KB

english, 2001

56

Resonant-Cavity-Enhanced UV Metal–Semiconductor–Metal (MSM) Photodetectors Based on AlGaN System

K. Kishino, M. Yonemaru, A. Kikuchi, Y. Toyoura

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 94 KB

english, 2001

57

High Performance Solar Blind Detectors Based on AlGaN Grown by MBE on Si

J.-Y. Duboz, J.-L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 83 KB

english, 2001

58

Visible-Blind Metal–Semiconductor–Metal Ultra-Violet Detectors Based on Epitaxially Laterally Overgrown Gallium Nitride

Wenhua Gu, Soo Jin Chua, Xin Hai Zhang, Mao Sheng Hao, Ji Zhang, Wen Wang, Wei Liu

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 221 KB

english, 2001

59

High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition

M.M. Wong, U. Chowdhury, C.J. Collins, B. Yang, J.C. Denyszyn, K.S. Kim, J.C. Campbell, R.D. Dupuis

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 179 KB

english, 2001

60

Characterization of GaN Based UV-VUV Detectors in the Range 3.4–25 eV by Using Synchrotron Radiation

A. Motogaito, K. Ohta, K. Hiramatsu, Y. Ohuchi, K. Tadatomo, Y. Hamamura, K. Fukui

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 91 KB

english, 2001

61

Superior Characteristics of RuO2/GaN Schottky-Type UV Photodetector

Sang-Hoon Shin, Byung-Kwon Jung, Jae-Hoon Lee, Myoung-Bok Lee, Jung-Hee Lee, Yong-Hyun Lee, Sung-Ho Hahm

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 88 KB

english, 2001

62

Vertical versus Lateral GaN Schottky Ultraviolet Detectors and Their Gain Mechanism

O. Katz, V. Garber, B. Meyler, G. Bahir, J. Salzman

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 102 KB

english, 2001

63

AlN/GaN Metal Insulator Semiconductor Field Effect Transistor Using Wet Chemical Etching with Hot Phosphoric Acid

T. Ide, M. Shimizu, A. Suzuki, X.-Q. Shen, H. Okumura, T. Nemoto

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 85 KB

english, 2001

64

Mass Transport Regrowth of GaN for Ohmic Contacts to AlGaN/GaN

S. Heikman, S. Keller, B. Moran, R. Coffie, S.P. DenBaars, U.K. Mishra

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 99 KB

english, 2001

65

Novel Polarization Enhanced Ohmic Contacts to n-Type GaN

Yun-Li Li, J.W. Graff, E.L. Waldron, Th. Gessmann, E.F. Schubert

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 106 KB

english, 2001

66

Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer

K. Kumakura, T. Makimoto, N. Kobayashi

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 92 KB

english, 2001

67

Reliability of Schottky Contacts on AlGaN

E. Monroy, F. Calle, T. Palacios, J. Sánchez-Osorio, M. Verdú, F.J. Sánchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, P. Ruterana

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 93 KB

english, 2001

68

Progress in Growth and Physics of Nitride-Based Quantum Dots

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 355 KB

english, 2001

69

Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer

S. Ootomo, T. Hashizume, H. Hasegawa

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 95 KB

english, 2001

70

Effects of Annealing on the Interface Properties between Ni and p-GaN

T. Maruyama, Y. Hagio, T. Miyajima, S. Kijima, Y. Nanishi, K. Akimoto

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 91 KB

english, 2001

71

Au Catalyzed Structural and Electrical Evolution of Ni/Au Contact to GaN

C.C. Kim, J.K. Kim, J.-L. Lee, J.H. Je, M.S. Yi, D.Y. Noh, Y. Hwu, P. Ruterana

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 80 KB

english, 2001

72

Nanometer-Scale Conversion of Si3N4 to SiOx for Applications in Lithography, Micromachining, and Selective-Area CVD

S. Gwo, T.T. Chen, T. Yasuda, S. Yamasaki

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 153 KB

english, 2001

73

Effect of Various Pre-Treatments on Ti/Al/Ti/Au Ohmic Contacts for AlGaN/GaN HFET Devices

J.A. Bardwell, Ying Liu, S. Rauhala, P. Bouwhuis, P. Marshall, H. Tang, J.B. Webb

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 105 KB

english, 2001

74

The Link between Gallium Vacancies and Plasma Damage to n-Type GaN

H.W. Choi, S.J. Chua

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 92 KB

english, 2001

75

Surface Modification and Ohmic Contact Formation to n and p-Type GaN

H.W. Choi, S.J. Chua, X.J. Kang

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 74 KB

english, 2001

76

Allowable Substrate Bias for the Etching of n-GaN in Photo-Enhanced Electrochemical Etching

J.W. Seo, C.S. Oh, J.W. Yang, G.M. Yang, K.Y. Lim, C.J. Yoon, H.J. Lee

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 91 KB

english, 2001

77

Thermodynamic Assessment of the Gallium–Nitrogen System

A.V. Davydov, W.J. Boettinger, U.R. Kattner, T.J. Anderson

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 87 KB

english, 2001

78

Characterization of 2.5-Inch Diameter Bulk GaN Grown from Melt-Solution

V. Soukhoveev, V. Ivantsov, Yu. Melnik, A. Davydov, D. Tsvetkov, K. Tsvetkova, I. Nikitina, A. Zubrilov, A. Lavrentiev, V. Dmitriev

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 119 KB

english, 2001

79

Growth of AlxGa1–xN and InyGa1–yN Single Crystals Using the Na Flux Method

K. Yasui, G.K. Kishor, H. Yamane, T. Akahane

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 225 KB

english, 2001

80

Growth and Characterization of High Quality Continuous GaN Films on Si-Doped Cracked GaN Templates

S.J. Chua, M. Hao, J. Zhang, E.K. Sia

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 223 KB

english, 2001

81

Effects of Substrate Pretreatment and Buffer Layers on GaN Epilayers Grown by Hydride Vapor Phase Epitaxy

W. Zhang, H.R. Alves, J. Blaesing, T. Riemann, M. Heuken, P. Veit, D. Pfisterer, R. Gregor, D.M. Hofmann, A. Krost, J. Christen, B.K. Meyer

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 102 KB

english, 2001

82

Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by Hydride Vapor Phase Epitaxy (HVPE)

D. Tsvetkov, Yu. Melnik, A. Davydov, A. Shapiro, O. Kovalenkov, J.B. Lam, J.J. Song, V. Dmitriev

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 106 KB

english, 2001

83

Properties of Si-Doped GaN Layers Grown by HVPE

A.V. Fomin, A.E. Nikolaev, I.P. Nikitina, A.S. Zubrilov, M.G. Mynbaeva, N.I. Kuznetsov, A.P. Kovarsky, B.Ja. Ber, D.V. Tsvetkov

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 103 KB

english, 2001

84

Direct Growth of GaN on (0001) Sapphire by Low Pressure Hydride Vapour Phase Epitaxy

E. Richter, S. Gramlich, A. Klein, E. Nebauer, I. Rechenberg, U. Zeimer, M. Weyers

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 122 KB

english, 2001

85

Polarity Inversion during Halide VPE Growth of GaN on GaAs(111)B-As Surface at High Temperatures

F. Hasegawa, M. Namerikawa, O. Takahashi, R. Souda

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 104 KB

english, 2001

86

Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN

T. Paskova, P.P. Paskov, E.M. Goldys, V. Darakchieva, U. Södervall, M. Godlewski, M. Zielinski, E. Valcheva, C.F. Carlström, Q. Wahab, B. Monemar

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 310 KB

english, 2001

87

Flow Modulation Growth of Thick GaN by Hydride Vapor Phase Epitaxy

W. Zhang, T. Riemann, H.R. Alves, M. Heuken, P. Veit, D. Pfisterer, D.M. Hofmann, J. Blaesing, A. Krost, J. Christen, B.K. Meyer

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 99 KB

english, 2001

88

Detection and Identification of Donors in Hydride-Vapor-Phase Epitaxial GaN Layers

J.A. Freitas Jr., G.C.B. Braga, W.J. Moore, K.Y. Lee, I.J. Song, R.J. Molnar, P. Van Lierde

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 114 KB

english, 2001

89

Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy

Yu. Melnik, D. Tsvetkov, A. Pechnikov, I. Nikitina, N. Kuznetsov, V. Dmitriev

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 98 KB

english, 2001

90

Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2

M.A. Mastro, O.M. Kryliouk, M.D. Reed, T.J. Anderson, A. Davydov, A. Shapiro

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 253 KB

english, 2001

91

A Band-Tail Model for InGaN Alloy System and Design for Quantum Well Laser Operation

A.A. Yamaguchi, M. Kuramoto, M. Nido, M. Mizuta

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 117 KB

english, 2001

92

Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy

V. Kirilyuk, P.R. Hageman, P.C.M. Christianen, W.H.M. Corbeek, M. Zielinski, L. Macht, J.L. Weyher, P.K. Larsen

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 113 KB

english, 2001

93

Novel Techniques for Stabilizing Transverse Mode in AlGaInN-Based Laser Diodes

S. Kijima, T. Tojyo, S. Goto, M. Takeya, T. Asano, T. Hino, S. Uchida, M. Ikeda

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 95 KB

english, 2001

94

Systematics of Optical Gain in GaInN/GaN Laser Structures

S. Heppel, A. Hangleiter, S. Bader, G. Brüderl, A. Weimar, V. Kümmler, A. Lell, V. Härle, J. Off, B. Kuhn, F. Scholz

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 94 KB

english, 2001

95

Influence of the Transverse and Lateral Waveguide on the Far Field Pattern in GaN Based Laser Structures

M. Röwe, P. Michler, J. Gutowski, S. Bader, G. Brüderl, V. Kümmler, A. Weimar, A. Lell, V. Härle

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 418 KB

english, 2001

96

Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers

S. Tomiya, H. Nakajima, K. Funato, T. Miyajima, K. Kobayashi, T. Hino, S. Kijima, T. Asano, M. Ikeda

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 134 KB

english, 2001

97

Growth, Optical and Structural Characterization of InGaN/GaN/AlGaN Optically Pumped Lasers

W.V. Lundin, A.V. Sakharov, A.S. Usikov, D.A. Bedarev, A.F. Tsatsulnikov, Ru Chin Tu, Sun Bin Yin, Jim Y. Chi

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 95 KB

english, 2001

98

Multiple Quantum Well InGaN/GaN Blue Optically Pumped Lasers Operating in the Spectral Range of 450–470 nm

G.P. Yablonskii, E.V. Lutsenko, V.N. Pavlovskii, I.P. Marko, A.L. Gurskii, V.Z. Zubialevich, O. Schön, H. Protzmann, M. Lünenbürger, B. Schineller, M. Heuken

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 94 KB

english, 2001

99

Growth and Optical Properties of Quaternary InAlGaN for 300 nm Band UV-Emitting Devices

H. Hirayama, A. Kinoshita, A. Hirata, Y. Aoyagi

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 162 KB

english, 2001

100

GaN-Based MQW Light Emitting Devices

M. Koike, S. Nagai, S. Yamasaki, Y. Tezen, A. Kojima, S. Iwayama

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 115 KB

english, 2001

101

Laser-Like Emission in the Blue-Green Spectral Range from InGaN/GaN/AlGaN Structures under Optical Pumping

A.V. Sakharov, A.S. Usikov, W.V. Lundin, D.A. Bedarev, A.F. Tsatsulnikov, E.E. Zavarin, A.I. Besulkin, N.N. Ledentsov, D. Bimberg

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 90 KB

english, 2001

102

Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters

J.P. Zhang, E. Kuokstis, Q. Fareed, H.M. Wang, J.W. Yang, G. Simin, M. Asif Khan, G. Tamulaitis, G. Kurilcik, S. Jursenas, A. Zukauskas, R. Gaska, M. Shur

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 98 KB

english, 2001