Transport Mechanism of SiGe Dot MOS Tunneling Diodes

IEEE Electron Device Letters 2007 / 07 Vol. 28; Iss. 7

Transport Mechanism of SiGe Dot MOS Tunneling Diodes

Kuo, P.-S., Lin, C.-H., Peng, C.-Y., Fu, Y.-C., Liu, C.W.
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Volume:
28
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2007.898288
Date:
July, 2007
File:
PDF, 164 KB
english, 2007
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