Reduction of defect density by rapid thermal annealing in...

Semiconductor Science and Technology 2013 / 02 Vol. 28; Iss. 2

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

Mazzucato, S, Boonpeng, P, Carrère, H, Lagarde, D, Arnoult, A, Lacoste, G, Zhang, T, Balocchi, A, Amand, T, Marie, X, Fontaine, C
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Volume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/2/022001
Date:
February, 2013
File:
PDF, 559 KB
english, 2013
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