High on/off current ratio AlGaN/GaN MOS-HEMTs employing...

Semiconductor Science and Technology 2013 / 02 Vol. 28; Iss. 2

High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO 2 gate insulators

Seok, Ogyun, Ahn, Woojin, Han, Min-Koo, Ha, Min-Woo
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Volume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/2/025001
Date:
February, 2013
File:
PDF, 812 KB
english, 2013
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