On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/Al x Ga 1− x As heterostructures
Koop, E J, Iqbal, M J, Limbach, F, Boute, M, van Wees, B J, Reuter, D, Wieck, A D, Kooi, B J, van der Wal, C HVolume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/2/025006
Date:
February, 2013
File:
PDF, 722 KB
english, 2013