Disilane-based cyclic deposition/etch of Si, Si:P and Si...

Semiconductor Science and Technology 2013 / 02 Vol. 28; Iss. 2

Disilane-based cyclic deposition/etch of Si, Si:P and Si 1− y C y :P layers: I. The elementary process steps

Hartmann, J M, Benevent, V, Barnes, J P, Veillerot, M, Deguet, C
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Volume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/2/025017
Date:
February, 2013
File:
PDF, 1.99 MB
english, 2013
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