Enhancement in photoluminescence from 1 eV GaInNAs...

Semiconductor Science and Technology 2013 / 02 Vol. 28; Iss. 2

Enhancement in photoluminescence from 1 eV GaInNAs epilayers subject to 7 MeV electron irradiation

Pavelescu, E-M, Kudrawiec, R, Bălţăţeanu, N, Spânulescu, S, Dumitrescu, M, Guina, M
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Volume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/2/025020
Date:
February, 2013
File:
PDF, 281 KB
english, 2013
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