GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3μm...

Journal of Crystal Growth 2013 / 5 Vol. 370

GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3μm light emission grown on InP substrate

Grasse, Christian, Gruendl, Tobias, Sprengel, Stephan, Wiecha, Peter, Vizbaras, Kristijonas, Meyer, Ralf, Amann, Markus-Christian
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Volume:
370
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2012.07.001
Date:
May, 2013
File:
PDF, 919 KB
english, 2013
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