Complementary DSL, EBIC and PL study of grown-in defects in Si-doped GaAs crystals grown under Ga- and As-rich conditions by LEC method
J.L. Weyher, C. Frigeri, P.J. Van der WelVolume:
103
Year:
1990
Language:
english
Pages:
8
DOI:
10.1016/0022-0248(90)90168-k
File:
PDF, 811 KB
english, 1990