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Volume 103; Issue 1-4
Main
Journal of Crystal Growth
Volume 103; Issue 1-4
Journal of Crystal Growth
Volume 103; Issue 1-4
1
Preface
Tomoya Ogawa
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 88 KB
Your tags:
english, 1990
2
Characterization of semiconductors by photoluminescence mapping at room temperature
Michio Tajima
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 619 KB
Your tags:
english, 1990
3
Two-dimensional image detection of luminescence and transport properties of GaAs
Y. Mori
,
M. Nakamura
,
Y. Sakachi
,
H. Ohkura
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 458 KB
Your tags:
english, 1990
4
Application of picosecond time resolved photoluminescence mapping for the characterization of semi-insulating GaAs Wafers
Tooru Katsumata
,
Hiroshi Imagawa
,
Motoyuki Watanabe
,
Hitoshi Zuzuki
,
Musubu Koishi
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 567 KB
Your tags:
english, 1990
5
A spatially resolved spectrally resolved photoluminescence mapping system
C.J.L. Moore
,
C.J. Miner
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 4.09 MB
Your tags:
english, 1990
6
Spatial distributions of impurities and defects in Te- and Si-doped GaAs grown in a reduced gravity environment
Z.G. Wang
,
C.J. Li
,
S.K. Wan
,
L.Y. Lin
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 781 KB
Your tags:
english, 1990
7
Complementary DSL, EBIC and PL study of grown-in defects in Si-doped GaAs crystals grown under Ga- and As-rich conditions by LEC method
J.L. Weyher
,
C. Frigeri
,
P.J. Van der Wel
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 811 KB
Your tags:
english, 1990
8
Raman microprobe analysis of GaAs wafers
J. Jimenez
,
M.A. González
,
B. Martín
,
B. Calvo
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 514 KB
Your tags:
english, 1990
9
A study on defects in a ZnSxSe1−x crystal by Raman scattering tomography
Kazufumi Sakai
,
Kouichi Sawahata
,
Tomoya Ogawa
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 289 KB
Your tags:
english, 1990
10
Cathodoluminescence imaging of semiconducting diamond formed by plasma CVD
Yoshihiro Yokota
,
Hiroshi Kawarada
,
Jing Sheng Ma
,
Kazuhito Nishimura
,
Akio Hiraki
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 587 KB
Your tags:
english, 1990
11
Investigations of oxygen precipitates in Czochralski silicon wafers by using infrared tomography
J.P. Fillard
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 574 KB
Your tags:
english, 1990
12
A quantitative light scattering tomography technique for measuring microprecipitate concentrations in GaAs and InP
T.J. Fawcett
,
M.R. Brozel
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 581 KB
Your tags:
english, 1990
13
Investigation of changes of As precipitates in semi-insulating GaAs crystals at several temperatures by infrared light scattering tomography
Yoohei Otoki
,
Masatoshi Watanabe
,
Tomoki Inada
,
Shoji Kuma
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 1.18 MB
Your tags:
english, 1990
14
Origin of microscopic inhomogeneities in bulk gallium arsenide
E. Molva
,
Ph. Bunod
,
A. Chabli
,
A. Lombardot
,
S. Dubois
,
F. Bertin
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 1.09 MB
Your tags:
english, 1990
15
High resolution and sensitivity infrared tomography
J.P. Fillard
,
P.C. Montgomery
,
P. Gall
,
M. Castagné
,
J. Bonnafé
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 516 KB
Your tags:
english, 1990
16
A three-dimensional study of dislocation lines in an in-doped GaAs crystal by layer-by-layer tomography
Syuji Todoroki
,
Kazufumi Sakai
,
Tomoya Ogawa
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 287 KB
Your tags:
english, 1990
17
Submicron optical sectioning microscopy: A particular inverse problem solution adapted to epilayer defect analysis
J.P. Fillard
,
P.C. Montgomery
,
P. Gall
,
J. Bonnafé
,
M. Castagné
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 402 KB
Your tags:
english, 1990
18
Application of elastic IR light scattering for investigation of large-scale electrically active defects in semiconductors
V.V. Voronkov
,
S.E. Zabolotskiy
,
V.P. Kalinushkin
,
D.I. Murin
,
M.G. Ploppa
,
V.A. Yuryev
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 396 KB
Your tags:
english, 1990
19
Synchrotron X-ray topographic studies on minute strain fields in as-grown silicon single crystals
Tetsuya Ishikawa
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 941 KB
Your tags:
english, 1990
20
Synchrotron X-radiation plane-wave topography for imaging microdefects in thinned silicon crystals
Yoshinori Chikaura
,
Masato Imai
,
Yoshifumi Suzuki
,
Yoshifumi Yatsurugi
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 890 KB
Your tags:
english, 1990
21
SiO2/Si interface study with synchroton radiation X-ray diffraction
Ichiro Hirosawa
,
Koichi Akimoto
,
Toru Tatsumi
,
Jun'ichiro Mizuki
,
Junji Matsui
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 433 KB
Your tags:
english, 1990
22
Microstructure and lattice distortion of anodized porous silicon layers
Hiroshi Sugiyama
,
Osamu Nittono
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 803 KB
Your tags:
english, 1990
23
Remote contact LBIC imaging of defects in semiconductors
J. Bajaj
,
W.E. Tennant
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 910 KB
Your tags:
english, 1990
24
High-sensitivity surface characterization with injected carriers by lasers beam using focused reflectance microwave probe method
Akira Usami
,
Noboru Yamada
,
Kazunori Matsuki
,
Tsutomu Takeuchi
,
Takao Wada
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 592 KB
Your tags:
english, 1990
25
Formation of surface inversion layer in F+-implanted n-type silicon
C.H. Chu
,
L.J. Chen
,
H.L. Hwang
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 954 KB
Your tags:
english, 1990
26
Microtomography of semiconductor crystals in the EBIC mode
I.E. Bondarenko
,
S.K. Likharev
,
E.I. Rau
,
E.B. Yakimov
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 192 KB
Your tags:
english, 1990
27
Thermal wave imaging of misfit dislocations and correlation with minority carrier lifetime
A. Bivas
,
W. Lee Smith
,
R.R. Kola
,
Z.J. Radzimski
,
G.A. Rozgonyi
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 524 KB
Your tags:
english, 1990
28
Studies of metal-induced surface defects in czochralski Si following rapid thermal processing with thermal wave method
S. Hahn
,
W.L. Smith
,
H. Suga
,
R. Meinecke
,
R.R. Kola
,
G.A. Rozgonyi
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 1021 KB
Your tags:
english, 1990
29
The mechanism of modulated optical reflectance imaging of dislocations in silicon
Jeff Bailey
,
Eicke R. Weber
,
Jon Opsal
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 871 KB
Your tags:
english, 1990
30
Mapping evaluation of damage effect on electrical properties of GaAs Schottky contacts
Kenji Shiojima
,
Tsugunori Okumura
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 575 KB
Your tags:
english, 1990
31
Characteristics of facets in Si-doped GaAs crystals grown by horizontal Bridgman technique
T.P. Chen
,
Y.D. Guo
,
T.S. Huang
,
L.J. Chen
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 890 KB
Your tags:
english, 1990
32
Round-robin test of EPD measurement on undoped GaAs wafers
W. Iwasaki
,
M. Imai
,
A. Nakamura
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 1.41 MB
Your tags:
english, 1990
33
Investigation of neutron radiation defects in silicon by high discriminability deep level transient spectroscopy (HDDLTS)
Wu Fengmei
,
Shi Yi
,
Wang Changhe
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 394 KB
Your tags:
english, 1990
34
Low temperature electrical mapping of ion implanted fet layers: Sidegating effect and transport properties
A. Roizes
,
J.P. David
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 1020 KB
Your tags:
english, 1990
35
Spatial distributions of induced traps in silicon by rapid thermal processing
Y. Tokuda
,
N. Kobayashi
,
A. Usami
,
Y. Inoue
,
M. Imura
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 470 KB
Your tags:
english, 1990
36
Distinguishing between EL2 and dislocation formation mechanisms in GaAs by mapping topographies
Faa-Ching Wang
,
Mann-Fu Rau
,
Jimmy Kurz
,
De-Dui Liao
,
Ronald Carter
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 1.10 MB
Your tags:
english, 1990
37
Characterization and mapping of semi-insulating GaAs crystals grown by vertical zone melting and by vertical zone refining
R.-S. Tang
,
L. Sargent
,
J.S. Blakemore
,
E.M. Swiggard
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 607 KB
Your tags:
english, 1990
38
DLTS and photoluminescence on wafer mapping analyses for AlGaAs/GaAs heterojunction bipolar transistors
Kazuo Watanabe
,
Kazumi Wada
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 393 KB
Your tags:
english, 1990
39
High resolution X-ray diffraction studies of semiconductor superlattices
S.J. Barnett
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 847 KB
Your tags:
english, 1990
40
X-ray scattering radiography and orientation topography for characterization of semiconductor crystals
Yoshinori Chikaura
,
Hideki Kii
,
Yoshifumi Suzuki
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 784 KB
Your tags:
english, 1990
41
Contactless measurements of rapidly thermal processed MBE GaAs on Si and GaAs wafers
Akira Usami
,
Akira Ito
,
Yutaka Tokuda
,
Hiroyuki Kano
,
Takao Wada
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 492 KB
Your tags:
english, 1990
42
X-ray topographic observation of subsurface line defects in GaAs on Si substrate
T. Yamamoto
,
Y. Shiba
,
K. Fujita
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 788 KB
Your tags:
english, 1990
43
Anti-phase boundaries of GaAs on Si
Yoshio Itoh
,
Hidefumi Mori
,
Masafumi Yamaguchi
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 334 KB
Your tags:
english, 1990
44
Behaviour of anion vacancy in InxGa1-xAsyP1-y grown on (111)A and (100) GaAs
Q.S. Zhu
,
K. Hiramatsu
,
S. Tanaka
,
I. Akasaki
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 338 KB
Your tags:
english, 1990
45
Influence of In content on defects of LPE GaAs epilayers
B.H. Yang
,
Z.G. Wang
,
H.J. He
,
L.Y. Lin
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 1.11 MB
Your tags:
english, 1990
46
Defects in (100)CdTe epilayers grown on (100)GaAs by MOCVD
Rui-wu Peng
,
Yong-qing Ding
,
Ge-ya Wang
,
Chen Peng
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 863 KB
Your tags:
english, 1990
47
Compensation of non-uniform illumination and background variations using recursive least squares algorithm
Jack C.H. Chung
,
Gary G. Leininger
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 871 KB
Your tags:
english, 1990
48
Mathematical morphology applied to integrated circuit inspection
Jordi Vitrià
,
Juan Jose Villanueva
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 503 KB
Your tags:
english, 1990
49
Models and algorithms of image processing of local SEM diagnostics
N.G. Ushakov
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 660 KB
Your tags:
english, 1990
50
“Makyoh”: The 2000 year old technology still alive
K. Kugimiya
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 309 KB
Your tags:
english, 1990
51
Characterization of mirror-like wafer surfaces using the magic mirror method
S. Hahn
,
K. Kugimiya
,
M. Yamashita
,
P.R. Blaustein
,
K. Takahashi
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 940 KB
Your tags:
english, 1990
52
Modern technique for the production and measurement of Makyoh images
K. Hibino
,
M. Yamauchi
,
M. Katoh
,
K. Matsuda
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 310 KB
Your tags:
english, 1990
53
Time-dependent dielectric breakbown evaluation for rapid-thermally grown SiO2 films formed on submicron-grooved Si surfaces
T. Arakawa
,
H. Fukuda
,
Y. Okabe
,
S. Ohno
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 541 KB
Your tags:
english, 1990
54
Surface defects in GaAs wafer processes
H. Matsushita
,
M. Ishida
,
J. Kikawa
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 435 KB
Your tags:
english, 1990
55
Evaluation of directly bonded silicon wafer interface by the magic mirror method
Osamu Okabayashi
,
Haruo Shirotori
,
Hiroyuki Sakurazawa
,
Eizaburo Kanda
,
Takeshi Yokoyama
,
Mitsuo Kawashima
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 665 KB
Your tags:
english, 1990
56
Characterization of polished surfaces by “Makyoh”
K. Kugimiya
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 904 KB
Your tags:
english, 1990
57
Subject index
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 87 KB
Your tags:
english, 1990
58
Editorial Board
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 125 KB
Your tags:
english, 1990
59
Surface characterization of semi-insulating GaAs wafers by room temperature photoluminescence mapping
Ryuichi Toba
,
Michio Tajima
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 763 KB
Your tags:
english, 1990
60
A line-scan system to assess homogeneity of [EL2] in heat-treated LEC SI GaAs
S. Clark
,
M.R. Brozel
,
D.J. Stirland
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 632 KB
Your tags:
english, 1990
61
Observation of microscopic impurity distributions in InP using ion microscope
Yoshikazu Homma
,
Masato Tomita
,
Satoru Kurosawa
,
Shun-ichi Tohno
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 405 KB
Your tags:
english, 1990
62
Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphide
P.N. Favennec
,
H. L'Haridon
,
R. Coquillé
,
M. Salvi
,
M. Gauneau
,
A. Roizes
,
J.P. David
,
S.K. Krawczyk
,
J.Y. Longères
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 615 KB
Your tags:
english, 1990
63
Characterization of growth cells in In-doped GaP crystals by birefringent method
J.T. Hsu
,
T.S. Huang
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 713 KB
Your tags:
english, 1990
64
Combined use of EBIC and DSL photoetching for the quantitative assessment of defect properties in LEC GaAs
C. Frigeri
,
J.L. Weyher
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 768 KB
Your tags:
english, 1990
65
The distribution of the deep donor EL2 and the net acceptor concentration in semi-insulating GaAs
A. Winnacker
,
F.X. Zach
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 843 KB
Your tags:
english, 1990
66
Scanning deep level transient spectroscopy (SDLTS) investigations of deep level spatial distribution in implanted silicon
O.V. Kononchuk
,
E.B. Yakimov
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 321 KB
Your tags:
english, 1990
67
Reverse contrast imaging in GaAs
A. Mohades-Kassai
,
M.R. Brozel
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 809 KB
Your tags:
english, 1990
68
A classification scheme for visual defects arising in semiconductor wafer inspection
A. Ravishankar Rao
,
Ramesh Jain
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 1.19 MB
Your tags:
english, 1990
69
Characterization of mirror-polished silicon wafers by Makyoh method
Seitaro Tokura
,
Nobukatsu Fujino
,
Masaharu Ninomiya
,
Kenji Masuda
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 493 KB
Your tags:
english, 1990
70
Author index
Journal:
Journal of Crystal Growth
Year:
1990
Language:
english
File:
PDF, 335 KB
Your tags:
english, 1990
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