Volume 103; Issue 1-4

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Journal of Crystal Growth
Volume 103; Issue 1-4

Journal of Crystal Growth

Volume 103; Issue 1-4

1

Preface

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 88 KB

english, 1990

2

Characterization of semiconductors by photoluminescence mapping at room temperature

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 619 KB

english, 1990

3

Two-dimensional image detection of luminescence and transport properties of GaAs

Y. Mori, M. Nakamura, Y. Sakachi, H. Ohkura

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 458 KB

english, 1990

4

Application of picosecond time resolved photoluminescence mapping for the characterization of semi-insulating GaAs Wafers

Tooru Katsumata, Hiroshi Imagawa, Motoyuki Watanabe, Hitoshi Zuzuki, Musubu Koishi

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 567 KB

english, 1990

5

A spatially resolved spectrally resolved photoluminescence mapping system

C.J.L. Moore, C.J. Miner

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 4.09 MB

english, 1990

6

Spatial distributions of impurities and defects in Te- and Si-doped GaAs grown in a reduced gravity environment

Z.G. Wang, C.J. Li, S.K. Wan, L.Y. Lin

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 781 KB

english, 1990

7

Complementary DSL, EBIC and PL study of grown-in defects in Si-doped GaAs crystals grown under Ga- and As-rich conditions by LEC method

J.L. Weyher, C. Frigeri, P.J. Van der Wel

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 811 KB

english, 1990

8

Raman microprobe analysis of GaAs wafers

J. Jimenez, M.A. González, B. Martín, B. Calvo

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 514 KB

english, 1990

9

A study on defects in a ZnSxSe1−x crystal by Raman scattering tomography

Kazufumi Sakai, Kouichi Sawahata, Tomoya Ogawa

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 289 KB

english, 1990

10

Cathodoluminescence imaging of semiconducting diamond formed by plasma CVD

Yoshihiro Yokota, Hiroshi Kawarada, Jing Sheng Ma, Kazuhito Nishimura, Akio Hiraki

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 587 KB

english, 1990

11

Investigations of oxygen precipitates in Czochralski silicon wafers by using infrared tomography

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 574 KB

english, 1990

12

A quantitative light scattering tomography technique for measuring microprecipitate concentrations in GaAs and InP

T.J. Fawcett, M.R. Brozel

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 581 KB

english, 1990

13

Investigation of changes of As precipitates in semi-insulating GaAs crystals at several temperatures by infrared light scattering tomography

Yoohei Otoki, Masatoshi Watanabe, Tomoki Inada, Shoji Kuma

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.18 MB

english, 1990

14

Origin of microscopic inhomogeneities in bulk gallium arsenide

E. Molva, Ph. Bunod, A. Chabli, A. Lombardot, S. Dubois, F. Bertin

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.09 MB

english, 1990

15

High resolution and sensitivity infrared tomography

J.P. Fillard, P.C. Montgomery, P. Gall, M. Castagné, J. Bonnafé

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 516 KB

english, 1990

16

A three-dimensional study of dislocation lines in an in-doped GaAs crystal by layer-by-layer tomography

Syuji Todoroki, Kazufumi Sakai, Tomoya Ogawa

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 287 KB

english, 1990

17

Submicron optical sectioning microscopy: A particular inverse problem solution adapted to epilayer defect analysis

J.P. Fillard, P.C. Montgomery, P. Gall, J. Bonnafé, M. Castagné

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 402 KB

english, 1990

18

Application of elastic IR light scattering for investigation of large-scale electrically active defects in semiconductors

V.V. Voronkov, S.E. Zabolotskiy, V.P. Kalinushkin, D.I. Murin, M.G. Ploppa, V.A. Yuryev

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 396 KB

english, 1990

19

Synchrotron X-ray topographic studies on minute strain fields in as-grown silicon single crystals

Tetsuya Ishikawa

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 941 KB

english, 1990

20

Synchrotron X-radiation plane-wave topography for imaging microdefects in thinned silicon crystals

Yoshinori Chikaura, Masato Imai, Yoshifumi Suzuki, Yoshifumi Yatsurugi

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 890 KB

english, 1990

21

SiO2/Si interface study with synchroton radiation X-ray diffraction

Ichiro Hirosawa, Koichi Akimoto, Toru Tatsumi, Jun'ichiro Mizuki, Junji Matsui

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 433 KB

english, 1990

22

Microstructure and lattice distortion of anodized porous silicon layers

Hiroshi Sugiyama, Osamu Nittono

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 803 KB

english, 1990

23

Remote contact LBIC imaging of defects in semiconductors

J. Bajaj, W.E. Tennant

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 910 KB

english, 1990

24

High-sensitivity surface characterization with injected carriers by lasers beam using focused reflectance microwave probe method

Akira Usami, Noboru Yamada, Kazunori Matsuki, Tsutomu Takeuchi, Takao Wada

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 592 KB

english, 1990

25

Formation of surface inversion layer in F+-implanted n-type silicon

C.H. Chu, L.J. Chen, H.L. Hwang

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 954 KB

english, 1990

26

Microtomography of semiconductor crystals in the EBIC mode

I.E. Bondarenko, S.K. Likharev, E.I. Rau, E.B. Yakimov

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 192 KB

english, 1990

27

Thermal wave imaging of misfit dislocations and correlation with minority carrier lifetime

A. Bivas, W. Lee Smith, R.R. Kola, Z.J. Radzimski, G.A. Rozgonyi

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 524 KB

english, 1990

28

Studies of metal-induced surface defects in czochralski Si following rapid thermal processing with thermal wave method

S. Hahn, W.L. Smith, H. Suga, R. Meinecke, R.R. Kola, G.A. Rozgonyi

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1021 KB

english, 1990

29

The mechanism of modulated optical reflectance imaging of dislocations in silicon

Jeff Bailey, Eicke R. Weber, Jon Opsal

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 871 KB

english, 1990

30

Mapping evaluation of damage effect on electrical properties of GaAs Schottky contacts

Kenji Shiojima, Tsugunori Okumura

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 575 KB

english, 1990

31

Characteristics of facets in Si-doped GaAs crystals grown by horizontal Bridgman technique

T.P. Chen, Y.D. Guo, T.S. Huang, L.J. Chen

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 890 KB

english, 1990

32

Round-robin test of EPD measurement on undoped GaAs wafers

W. Iwasaki, M. Imai, A. Nakamura

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.41 MB

english, 1990

33

Investigation of neutron radiation defects in silicon by high discriminability deep level transient spectroscopy (HDDLTS)

Wu Fengmei, Shi Yi, Wang Changhe

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 394 KB

english, 1990

34

Low temperature electrical mapping of ion implanted fet layers: Sidegating effect and transport properties

A. Roizes, J.P. David

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1020 KB

english, 1990

35

Spatial distributions of induced traps in silicon by rapid thermal processing

Y. Tokuda, N. Kobayashi, A. Usami, Y. Inoue, M. Imura

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 470 KB

english, 1990

36

Distinguishing between EL2 and dislocation formation mechanisms in GaAs by mapping topographies

Faa-Ching Wang, Mann-Fu Rau, Jimmy Kurz, De-Dui Liao, Ronald Carter

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.10 MB

english, 1990

37

Characterization and mapping of semi-insulating GaAs crystals grown by vertical zone melting and by vertical zone refining

R.-S. Tang, L. Sargent, J.S. Blakemore, E.M. Swiggard

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 607 KB

english, 1990

38

DLTS and photoluminescence on wafer mapping analyses for AlGaAs/GaAs heterojunction bipolar transistors

Kazuo Watanabe, Kazumi Wada

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 393 KB

english, 1990

39

High resolution X-ray diffraction studies of semiconductor superlattices

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 847 KB

english, 1990

40

X-ray scattering radiography and orientation topography for characterization of semiconductor crystals

Yoshinori Chikaura, Hideki Kii, Yoshifumi Suzuki

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 784 KB

english, 1990

41

Contactless measurements of rapidly thermal processed MBE GaAs on Si and GaAs wafers

Akira Usami, Akira Ito, Yutaka Tokuda, Hiroyuki Kano, Takao Wada

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 492 KB

english, 1990

42

X-ray topographic observation of subsurface line defects in GaAs on Si substrate

T. Yamamoto, Y. Shiba, K. Fujita

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 788 KB

english, 1990

43

Anti-phase boundaries of GaAs on Si

Yoshio Itoh, Hidefumi Mori, Masafumi Yamaguchi

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 334 KB

english, 1990

44

Behaviour of anion vacancy in InxGa1-xAsyP1-y grown on (111)A and (100) GaAs

Q.S. Zhu, K. Hiramatsu, S. Tanaka, I. Akasaki

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 338 KB

english, 1990

45

Influence of In content on defects of LPE GaAs epilayers

B.H. Yang, Z.G. Wang, H.J. He, L.Y. Lin

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.11 MB

english, 1990

46

Defects in (100)CdTe epilayers grown on (100)GaAs by MOCVD

Rui-wu Peng, Yong-qing Ding, Ge-ya Wang, Chen Peng

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 863 KB

english, 1990

47

Compensation of non-uniform illumination and background variations using recursive least squares algorithm

Jack C.H. Chung, Gary G. Leininger

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 871 KB

english, 1990

48

Mathematical morphology applied to integrated circuit inspection

Jordi Vitrià, Juan Jose Villanueva

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 503 KB

english, 1990

49

Models and algorithms of image processing of local SEM diagnostics

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 660 KB

english, 1990

50

“Makyoh”: The 2000 year old technology still alive

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 309 KB

english, 1990

51

Characterization of mirror-like wafer surfaces using the magic mirror method

S. Hahn, K. Kugimiya, M. Yamashita, P.R. Blaustein, K. Takahashi

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 940 KB

english, 1990

52

Modern technique for the production and measurement of Makyoh images

K. Hibino, M. Yamauchi, M. Katoh, K. Matsuda

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 310 KB

english, 1990

53

Time-dependent dielectric breakbown evaluation for rapid-thermally grown SiO2 films formed on submicron-grooved Si surfaces

T. Arakawa, H. Fukuda, Y. Okabe, S. Ohno

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 541 KB

english, 1990

54

Surface defects in GaAs wafer processes

H. Matsushita, M. Ishida, J. Kikawa

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 435 KB

english, 1990

55

Evaluation of directly bonded silicon wafer interface by the magic mirror method

Osamu Okabayashi, Haruo Shirotori, Hiroyuki Sakurazawa, Eizaburo Kanda, Takeshi Yokoyama, Mitsuo Kawashima

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 665 KB

english, 1990

56

Characterization of polished surfaces by “Makyoh”

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 904 KB

english, 1990

57

Subject index

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 87 KB

english, 1990

58

Editorial Board

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 125 KB

english, 1990

59

Surface characterization of semi-insulating GaAs wafers by room temperature photoluminescence mapping

Ryuichi Toba, Michio Tajima

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 763 KB

english, 1990

60

A line-scan system to assess homogeneity of [EL2] in heat-treated LEC SI GaAs

S. Clark, M.R. Brozel, D.J. Stirland

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 632 KB

english, 1990

61

Observation of microscopic impurity distributions in InP using ion microscope

Yoshikazu Homma, Masato Tomita, Satoru Kurosawa, Shun-ichi Tohno

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 405 KB

english, 1990

62

Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphide

P.N. Favennec, H. L'Haridon, R. Coquillé, M. Salvi, M. Gauneau, A. Roizes, J.P. David, S.K. Krawczyk, J.Y. Longères

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 615 KB

english, 1990

63

Characterization of growth cells in In-doped GaP crystals by birefringent method

J.T. Hsu, T.S. Huang

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 713 KB

english, 1990

64

Combined use of EBIC and DSL photoetching for the quantitative assessment of defect properties in LEC GaAs

C. Frigeri, J.L. Weyher

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 768 KB

english, 1990

65

The distribution of the deep donor EL2 and the net acceptor concentration in semi-insulating GaAs

A. Winnacker, F.X. Zach

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 843 KB

english, 1990

66

Scanning deep level transient spectroscopy (SDLTS) investigations of deep level spatial distribution in implanted silicon

O.V. Kononchuk, E.B. Yakimov

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 321 KB

english, 1990

67

Reverse contrast imaging in GaAs

A. Mohades-Kassai, M.R. Brozel

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 809 KB

english, 1990

68

A classification scheme for visual defects arising in semiconductor wafer inspection

A. Ravishankar Rao, Ramesh Jain

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 1.19 MB

english, 1990

69

Characterization of mirror-polished silicon wafers by Makyoh method

Seitaro Tokura, Nobukatsu Fujino, Masaharu Ninomiya, Kenji Masuda

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 493 KB

english, 1990

70

Author index

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 335 KB

english, 1990