Atomic layer epitaxy of AlxGa1−xAs and device quality GaAs
J.R. Gong, P.C. Colter, D. Jung, S.A. Hussien, C.A. Parker, A. Dip, F. Hyuga, W.M. Duncan, S.M. BedairVolume:
107
Year:
1991
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(91)90438-b
File:
PDF, 358 KB
english, 1991