Volume 107; Issue 1-4

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Journal of Crystal Growth
Volume 107; Issue 1-4

Journal of Crystal Growth

Volume 107; Issue 1-4

1

Editorial Board

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 91 KB

english, 1991

2

Preface

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 167 KB

english, 1991

3

Detailed models of the MOVPE process

Klavs F. Jensen, Dimitrios I. Fotiadis, Triantafillos J. Mountziaris

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 812 KB

english, 1991

4

Thermal decomposition studies of group V hydrides

P. Abraham, A. Bekkaoui, V. Souliére, J. Bouix, Y. Monteil

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 399 KB

english, 1991

5

In situ monitoring of crystal growth by reflectance difference spectroscopy

E. Colas, D.E. Aspnes, R. Bhat, A.A. Studna, J.P. Harbison, L.T. Florez, M.A. Koza, V.G. Keramidas

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 663 KB

english, 1991

6

Surface processes during growth of GaAs by MOCVD

L.J. Giling, M.H.J.M. de Croon

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 334 KB

english, 1991

7

In-situ monitoring of GaAs growth process in MOVPE by surface photo-absorption method

N. Kobayashi, T. Makimoto, Y. Yamauchi, Y. Horikoshi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 310 KB

english, 1991

8

Atmospheric pressure atomic layer epitaxy: mechanisms and applications

P. Daniel Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong, S.P. DenBaars

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 813 KB

english, 1991

9

Atomic layer epitaxy of AlxGa1−xAs and device quality GaAs

J.R. Gong, P.C. Colter, D. Jung, S.A. Hussien, C.A. Parker, A. Dip, F. Hyuga, W.M. Duncan, S.M. Bedair

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 358 KB

english, 1991

10

High carbon doping of AlxGa1−xAs (O ≤x ≤ 1) by atomic layer epitaxy for device applications

B.-C. Chung, R.T. Green, H.F. MacMillan

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 525 KB

english, 1991

11

Ordered GaInP by atomic layer epitaxy

B.T. McDermott, N.A. El-Masry, B.L. Jiang, F. Hyuga, S.M. Bedair, W.M. Duncan

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 474 KB

english, 1991

12

Pulsed jet epitaxy of III–V compounds

M. Ozeki, N. Ohtsuka, Y. Sakuma, K. Kodama

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 605 KB

english, 1991

13

GaAs epitaxy using alternate pulses in a standard LP-MOVPE reactor

J. Wisser, P. Czuprin, D. Grundmann, P. Balk, M. Waschbüsch, R. Lückerath, W. Richter

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 333 KB

english, 1991

14

Selective epitaxy of GaAs, AlxGa1−xAs, and InxGa1−xAs

T.F. Kuech, M.S. Goorsky, M.A. Tischler, A. Palevski, P. Solomon, R. Potemski, C.S. Tsai, J.A. Lebens, K.J. Vahala

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 1.08 MB

english, 1991

15

Selective area epitaxy of GaAs on Si using atomic layer epitaxy by LP-MOVPE

N.H. Karam, V. Haven, S.M. Vernon, N. El-Masry, E.H. Lingunis, N. Haegel

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 447 KB

english, 1991

16

Selective embedded growth of GaInAs by low pressure MOVPE

O. Kayser, B. Opitz, R. Westphalen, U. Niggebrügge, K. Schneider, P. Balk

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 434 KB

english, 1991

17

Selective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and {111} substrates

Y.D. Galeuchet, P. Roentgen

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 270 KB

english, 1991

18

Composition of selectively grown InxGa1−xAs structures from locally resolved Raman spectroscopy

J. Finders, J. Geurts, A. Kohl, M. Weyers, B. Opitz, O. Kayser, P. Balk

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 327 KB

english, 1991

19

Selective MOVPE of semi-insulating InP layers for high speed OEICs

G. Laube, A. Nowitzki, K. Dütting, P. Speier

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 286 KB

english, 1991

20

Layer uniformity in a multiwafer MOVPE reactor for III–V compounds

P.M. Frijlink, J.L. Nicolas, P. Suchet

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 537 KB

english, 1991

21

Influence of gas mixing on the lateral uniformity in horizontal MOVPE reactors

I. Moerman, G. Coudenys, P. Demeester, B. Turner, J. Crawley

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 298 KB

english, 1991

22

Growth of extremely uniform III–V compound semiconductor layers by LP-MOVPE by application of the gas foil technique for substrate rotation

D. Schmitz, G. Strauch, H. Jürgensen, M. Heyen

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 230 KB

english, 1991

23

Uniformity — optical properties of GaInP-GaAlInP layers grown by MOVPE

M. Mpaskoutas, C. Morhaïm, J.N. Patillon, J.P. André, A. Valster, J.J. Rusch

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 330 KB

english, 1991

24

MOVPE growth of II–VI compounds in a vertical reactor with high-speed horizontal rotating disk

G.S. Tompa, T. Salagaj, L. Cook, R.A. Stall, C.R. Nelson, P.L. Anderson, W.H. Wright, W.L. Ahlgren, S.M. Johnson

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 336 KB

english, 1991

25

Etching of InP by HCl in an OMVPE reactor

C. Caneau, R. Bhat, M. Koza, J.R. Hayes, R. Esagui

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 438 KB

english, 1991

26

The influence of growth conditions on the planarity of MOVPE grown GaInAs(P) interfaces

P.C. Spurdens, M.R. Taylor, M. Hockly, M.J. Yates

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 422 KB

english, 1991

27

Effect of wafer cleavage on composition of InGaAsP grown on InP by low pressure MOCVD

D.G. Knight, C.J. Miner, B. Watt

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 287 KB

english, 1991

28

Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: application to thickness-modulated waveguide structures

E. Colas, A. Shahar, B.D. Soole, W.J. Tomlinson, J.R. Hayes, C. Caneau, R. Bhat

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 370 KB

english, 1991

29

Step-flow growth and fractional-layer superlattices on ()B GaAs vicinal surfaces

Takashi Fukui, Hisao Saito

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 417 KB

english, 1991

30

Strong enhancement of band edge PL intensity and improved morphology for AlGaAs grown on lenticular GaAs substrates by low pressure MOVPE

Eric S. Johnson

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 338 KB

english, 1991

31

Direct evidence of lateral bandgap patterning on stepped structures grown on non-planar, vicinal GaAs surfaces by cathodoluminescence investigations

E. Colas, E.M. Clausen Jr., E. Kapon, D.M. Hwang, S. Simhony, R. Bhat, C.Y. Chen, P.S.D. Lin, L. Schiavone, B. Van der Gaag

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 359 KB

english, 1991

32

Infrared spectroscopic determination of substitutional carbon in MOVPE grown films of GaAs

Ananth V. Annapragada, Klavs F. Jensen, Thomas F. Kuech

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 408 KB

english, 1991

33

The influence of substrate orientation and mis-orientation on the Si-doping of GaAs grown by MOVPE

X. Tang, J. te Nijenhuis, Y. Li, L.J. Giling

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 342 KB

english, 1991

34

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

M.A. Tischler, R.M. Potemski, T.F. Kuech, F. Cardone, M.S. Goorsky, G. Scilla

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 454 KB

english, 1991

35

Carbon doping exceeding 1020 cm-3 in GaAs grown by AP-MOVPE

M.C. Hanna, Z.H. Lu, E.W. Mao, T. McCormick, E.G. Oh, A. Majerfeld, D.M. Szmyd

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 98 KB

english, 1991

36

Alternative group V precursors for CVD applications

R.M. Lum, J.K. Klingert

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 490 KB

english, 1991

37

Screening of organotellurium compounds for use as MOVPE precursors

J.E. Hails, S.J.C. Irvine

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 342 KB

english, 1991

38

Synthesis and decomposition studies of dialkyltellurides of type RTeR′

A. Ewan D. McQueen, Peter N. Culshaw, John C. Walton, D.V. Shenai-Khatkhate, David J. Cole-Hamilton, J. Brian Mullin

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 382 KB

english, 1991

39

Growth of GaAs by MOCVD using a solid arsenic source

R. Pen˜a-Sierra, J.G. Castro-Zavala, A. Escobosa

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 296 KB

english, 1991

40

Control of residual impurity incorporation in tertiarybutylarsine-grown GaAs

G. Haacke, S.P. Watkins, H. Buckhard

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 347 KB

english, 1991

41

Trisdimethylaminoarsine as As source for the LP-MOVPE of GaAs

M.H. Zimmer, R. Hövel, W. Brysch, A. Brauers, P. Balk

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 90 KB

english, 1991

42

Growth of low carbon content AlxGa1−xAs by reduced pressure MOVPE using trimethylamine alane

A.C. Jones, S.A. Rushworth

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 81 KB

english, 1991

43

Growth of GaInP over the whole composition range by OMVPE using tertiarybutylphosphine for the phosphorus source

Yoshikazu Takeda, Soichiro Araki, Masayoshi Takemi, Susumu Noda, Akio Sasaki

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 237 KB

english, 1991

44

Growth of InP with novel In and P precursors

R. Hövel, N. Brianese, A. Brauers, P. Balk, M. Zimmer, M. Hostalek, L. Pohl

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 323 KB

english, 1991

45

MOVPE growth of uniform AlGaAs and InGaAs using organoarsine with inverted-horizontal atmospheric-pressure reactor

T. Kikkawa, H. Tanaka, J. Komeno

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 363 KB

english, 1991

46

Transition metal doping of LP-MOCVD-grown InP

T. Wolf, A. Krost, D. Bimberg, F. Reier, P. Harde, J. Winterfeld, H. Schumann

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 308 KB

english, 1991

47

Purity of zinc precursors and the properties of epitaxial ZnSe grown by atmospheric pressure metalorganic chemical vapour deposition

H.M. Yates, J.O. Williams

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 247 KB

english, 1991

48

MOVPE of ZnSe using organometallic allyl selenium precursors

Sanjay Patnaik, Klavs F. Jensen, Konstantinos P. Giapis

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 358 KB

english, 1991

49

High quality AlxGa1−x−yInyP alloys grown by MOVPE on (311) B GaAs substrates

A. Valster, C.T.H.F. Liedenbaum, M.N. Finke, A.L.G. Severens, M.J.B. Boermans, D.E.W. Vandenhoudt, C.W.T. Bulle-Lieuwma

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 418 KB

english, 1991

50

OMVPE growth and characterization of Bi-containing III–V alloys

K.Y. Ma, Z.M. Fang, R.M. Cohen, G.B. Stringfellow

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 467 KB

english, 1991

51

GaSb/InAs heterojunctions grown by MOVPE

S.K. Haywood, R.W. Martin, N.J. Mason, R.J. Nicholas, P.J. Walker

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 394 KB

english, 1991

52

Investigation of MOCVD growth of AlxGa1−xAs/GaAs and AlxGa1−xAs/GaAs/AlxGa1−xAs/GaAs multilayer structures with high Al content

Gao Hongkai, Yun Feng, Zhang Jikang, Hou Xun, Gong Ping

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 250 KB

english, 1991

53

Optical and electrical properties of the AlxGa1−xAs/GaAs single heterojunctions grown by low pressure MOVPE

F.E.G. Guimar∼aes, I. Gyuro, F. Scheffer, M. Heuken, K. Heime

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 387 KB

english, 1991

54

Low contact-resistance GaAs/AlGaAs regrowth interfaces and compositional grading layer formation during growth by metalorganic vapor phase epitaxy

Kenji Hiruma, Tooru Haga, Toshiyuki Usagawa, Ayako Ihara

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 327 KB

english, 1991

55

Growth of highly uniform, reproducible InGaAs films in a multiwafer rotating disk reactor by MOCVD

M.A. McKee, P.E. Norris, R.A. Stall, G.S. Tompa, C.S. Chern, D. Noh, S.S. Kang, T.J. Jasinski

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 364 KB

english, 1991

56

Scanning transmission electron microscopy of heterointerfaces grown by metalorganic vapor phase epitaxy (MOVPE)

H. Lakner, B. Bollig, E. Kubalek, M. Heuken, K. Heime, F. Scheffer, F.E.G. Guimar∼aes

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 384 KB

english, 1991

57

MOVPE growth and characterization of strained layers

M.-E. Pistol, A. Gustafsson, M. Gerling, L. Samuelson, H. Titze

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 751 KB

english, 1991

58

MOCVD growth of GaAs on Si using (Al,In) GaAs/GaAs buffer layer

K. Fujita, Y. Shiba, K. Asai

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 324 KB

english, 1991

59

Very low dislocation density GaAs on Si using superlattices grown by MOCVD

Tetsuo Soga, Hironobu Nishikawa, Takashi Jimbo, Masayoshi Umeno

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 255 KB

english, 1991

60

High quality GaAs on Si using Si0.04Ge0.96/Ge buffer layers

R. Venkatasubramanian, M.L. Timmons, J.B. Posthill, B.M. Keyes, R.K. Ahrenkiel

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 325 KB

english, 1991

61

LP-MOVPE growth of antiphase domain free InP on (001) Si using low temperature processing

M. Grundmann, A. Krost, D. Bimberg

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 114 KB

english, 1991

62

Critical layer thickness of MOVPE-grown GaAs on InxGa1−xAs

J. te Nijenhuis, P.J. van der Wel, R.W.F. van Asten, P.R. Hageman, L.J. Giling

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 464 KB

english, 1991

63

Improvement of the crystalline, optical and electrical quality of MOVPE GaInSb layers

G. Bougnot, F. Delannoy, F. Pascal, P. Grosse, A. Giani, J. Kaoukab, J. Bougnot, R. Fourcade, P.J. Walker, N.J. Mason, B. Lambert

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 492 KB

english, 1991

64

MOVPE growth of GaN on a misoriented sapphire substrate

Kazumasa Hiramatsu, Hiroshi Amano, Isamu Akasaki, Hisaki Kato, Norikatsu Koide, Katsuhide Manabe

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 405 KB

english, 1991

65

MOVPE growth of GaP and GaAsxP1−x on (111)-oriented GaP

H. Titze, M. Gerling, M.-E. Pistol, L. Samuelson

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 359 KB

english, 1991

66

Absorption characteristics of GaSb/InAs and InSb/InAs SLSs grown on (111) GaAs by MOVPE

M. Lakrimi, N.J. Mason, R.J. Nicholas, G.B. Stringfellow, G. Summers, P.J. Walker

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 137 KB

english, 1991

67

Growth and analysis of quantum well structures

Detlev Grützmacher

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 770 KB

english, 1991

68

Effect of growth parameters on the interfacial structure of GaInAs/InP quantum wells

J. Hergeth, D. Grützmacher, F. Reinhardt, P. Balk

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 394 KB

english, 1991

69

Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence

J. Camassel, J.P. Laurenti, S. Juillaguet, F. Reinhardt, K. Wolter, H. Kurz, D. Grützmacher

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 368 KB

english, 1991

70

Lateral and vertical composition control in MOCVD-grown InP/GaInAs(P) structures

C.G. Cureton, E.J. Thrush, A.T.R. Briggs

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 472 KB

english, 1991

71

Determination of the band discontinuity of MOCVD grown In1−xGaxAs/In1-yAlyAs heterostructures with optical and structural methods

J. Böhrer, M. Grundmann, U. Lienert, D. Bimberg, H. Ishikawa, M. Kamada, N. Watanabe

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 362 KB

english, 1991

72

MOVPE of In(GaAs)P/InGaAs MQW structures

P. Wiedemann, M. Klenk, W. Körber, U. Koerner, R. Weinmann, E. Zielinski, P. Speier

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 288 KB

english, 1991

73

OMVPE growth of GaInAs/InP and GaInAs/GaInAsP quantum wells

H. Kamei, H. Hayashi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 302 KB

english, 1991

74

Influence of the gas switching sequence on the optical properties of ultrathin InGaAs/InP quantum wells

G. Landgren, P. Ojala, O. Ekström

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 341 KB

english, 1991

75

MOVPE growth and optical properties of AlGaInP/GaInP strained single quantum well structures

Makoto Kondo, Kay Domen, Chikashi Anayama, Toshiyuki Tanahashi, Kazuo Nakajima

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 283 KB

english, 1991

76

Patterning and overgrowth of nanostructure quantum well wire arrays by LP-MOVPE

N.H. Karam, A. Mastrovito, V. Haven, K. Ismail, S. Pennycook, Henry I. Smith

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 476 KB

english, 1991

77

MOVPE of narrow band gap II–VI materials

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 530 KB

english, 1991

78

The growth of CMT on GaAs for high quality linear arrays of MWIR and LWIR photodiodes

L.M. Smith, C.F. Byrne, D. Patel, P. Knowles, J. Thompson, G.T. Jenkin, T. Nguyen Duy, A. Durand, M. Bourdillot

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 270 KB

english, 1991

79

Low temperature growth of (Cd,Hg) Te layers by MOVPE

F. Desjonquères, A. Tromson-Carli, P. Cheuvart, R. Druilhe, C. Grattepain, A. Katty, Y. Marfaing, R. Triboulet, D. Lorans

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 472 KB

english, 1991

80

MOVPE growth of wide bandgap II–VI materials

Hiroshi Kukimoto

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 487 KB

english, 1991

81

Effects of Ar ion laser irradiation on MOVPE of ZnSe using DMZn and DMSe as reactants

Akihiko Yoshikawa, Tamotsu Okamoto, Tsuyoshi Fujimoto

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 411 KB

english, 1991

82

MOVPE growth and characterisation of CdTe on CdS single crystal substrates

M.Y. Simmons, P.D. Brown, K. Durose

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 396 KB

english, 1991

83

Raman characterization of ZnSe/GaAs MOVPE heterostructures

O. Pagès, M. Renucci, O. Briot, N. Tempier, R.L. Aulombard

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 283 KB

english, 1991

84

Properties of Zn1−xCdxS ternary and Zn1−xCdxS1−ySey quaternary thin films on GaAs grown by OMVPE

Shizuo Fujita, Shigeo Hayashi, Mitsuru Funato, Tomoyuki Yoshie, Shigeo Fujita

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 338 KB

english, 1991

85

Doping of nitrogen in ZnSe films: improved doping properties in ZnSe/ZnSSe periodic layered structures grown on GaAs by MOVPE

I. Suemune, H. Masato, K. Nakanishi, Y. Kuroda, M. Yamanishi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 261 KB

english, 1991

86

MOCVD superconducting oxide films

Toshio Hirai, Hisanori Yamane

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 581 KB

english, 1991

87

Fabrication and characterization of Bi-Sr-Ca-Cu-O MOCVD thin films

T. Sugimoto, M. Yoshida, K. Yamaguchi, Y. Yamada, K. Sugawara, Y. Shiohara, S. Tanaka

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 479 KB

english, 1991

88

Preparation and properties of superconducting Bi–Sr–Ca–Cu–O thin films on polycristalline silver substrates by organometallic chemical vapor deposition

J.M. Zhang, B.W. Wessels, D.S. Richeson, T.J. Marks

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 342 KB

english, 1991

89

Preparation and properties of Ba-deficient superconducting thin Y–Ba–Cu–O films

J. Souc, D. Machajdik, V. Smatko, V. Strbik, K. Fröhlich, S. Hrib, S. Stefanik, P. Kordos, J. Ivan

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 87 KB

english, 1991

90

Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition

L.A. Wills, W.A. Feil, B.W. Wessels, L.M. Tonge, T.J. Marks

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 206 KB

english, 1991

91

Quantum wire lasers by OMCVD growth on nonplanar substrates

R. Bhat, E. Kapon, S. Simhony, E. Colas, D.M. Hwang, N.G. Stoffel, M.A. Koza

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 647 KB

english, 1991

92

MOVPE of AlGaInP/GaInP heterostructures for visible lasers

P. Roentgen, W. Heuberger, G.L. Bona, P. Unger

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 460 KB

english, 1991

93

Reproducible growth of narrow linewidth multiple quantum well graded index separate confinement distributed feedback (MQW-GRIN-SCH-DFB) lasers by MOVPE

T. Tanbun-Ek, R.A. Logan, H. Temkin, N.A. Olsson, M.C. Wu, A.M. Sergent, K.W. Wecht

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 442 KB

english, 1991

94

Room temperature low threshold CW operation of MOCVD-grown AlGaAs/GaAs SQW lasers on Si substrates with SiO2 back-coating

Takashi Egawa, Hitoshi Tada, Yasufumi Kobayashi, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 227 KB

english, 1991

95

Low threshold 1.5 μm SCH-MQW lasers by atmospheric pressure MOVPE and direct comparison of low versus atmospheric pressure MOVPE laser growths

A. Ougazzaden, J.-D. Ganière, Y. Gao, E.V.K. Rao, B. Sermage, C. Kazmierski, A. Mircea

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 344 KB

english, 1991

96

A new selective MOVPE regrowth process utilizing in-situ vapor phase etching for optoelectronic integrated circuits

Kenji Shimoyama, Yuichi Inoue, Masanori Katoh, Hideki Gotoh, Yoshihiro Suzuki, Hiroyoshi Yajima

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 243 KB

english, 1991

97

Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates

R. Bhat, C. Caneau, C.E. Zah, M.A. Koza, W.A. Bonner, D.M. Hwang, S.A. Schwarz, S.G. Menocal, F.G. Favire

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 482 KB

english, 1991

98

Growth and assessment of InGaAs/InGaAlAs/InP multiple quantum well lasers

R.W. Glew, P.D. Greene, G.D. Henshall, C. Lowney, J.P. Stagg, J.E.A. Whiteaway, B. Garrett, A.G. Norman

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 301 KB

english, 1991

99

Strained-layer InGaAs/InGaAsP MQW structures and their application to 1.67 μm lasers grown by metalorganic vapor phase epitaxy

Mitsuo Yamamoto, Mamoru Oishi, Hiromi Sudo, Junichi Nakano, Nobuyori Tsuzuki

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 405 KB

english, 1991

100

InP based optoelectronics

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 1.14 MB

english, 1991

101

Selective MOVPE growth of GaAs on Si and its applications to LEDs

A. Ackaert, P. Demeester, L. Buydens, G. Coudenys, P. Van Daele, M. Renaud

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 311 KB

english, 1991

102

GaAs/GaAlAs surface emitting IR LED with Bragg reflector grown by MOCVD

T. Kato, H. Susawa, M. Hirotani, T. Saka, Y. Ohashi, E. Shichi, S. Shibata

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 236 KB

english, 1991

103

Improving the performance of InAs1−xSbx/InSb infrared detectors grown by metalorganic chemical vapor deposition

R.M. Biefeld, J.R. Wendt, S.R. Kurtz

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 260 KB

english, 1991

104

Two-step MOVPE growth for planar InP/InGaAs/InP pin-FET combinations with locally diffused buffer layer

G. Ebbinghaus, R. Strzoda, T. Scherg, H. Albrecht, R. Penz, C. Lauterbach

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 280 KB

english, 1991

105

Growth and characterization of AlGaAs/GaAs quantum well structures for the fabrication of long wavelength infrared detectors

Z.F. Paska, J.Y. Andersson, L. Lundqvist, C.-O.A. Olsson

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 262 KB

english, 1991

106

Application of AP MOVPE to a new butt-coupling scheme

B. Rose, D. Remiens, V. Hornung, D. Robein

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 429 KB

english, 1991

107

High optical and electrical quality GaInAs/InP, GaAs/InP double heterostructures for optoelectronic integration

J.P. André, J.N. Patillon, P. Riglet, J.Y. Lesiourd, H. Le Coz, B.G. Martin

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 268 KB

english, 1991

108

The use of InP-based semiconductor reflective stacks for enhanced device performance

J. Thompson, A.K. Wood, A.J. Moseley, M.Q. Kearley, P.J. Topham, N. Maung, N. Carr

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 483 KB

english, 1991

109

A novel technique for the preservation of gratings in InP and InGaAsP and for the simultaneous preservation of InP, InGaAs, and InGaAsP in OMCVD

R. Bhat, M.A. Koza, C.E. Zah, C. Caneau, C.C. Chang, S.A. Schwarz, A.S. Gozdz, P.S.D. Lin, A. Yi-Yan

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 452 KB

english, 1991

110

A new approach for the integration of optoelectronic devices using laser selective area epitaxy

H. Liu, J.C. Roberts, J. Ramdani, S.M. Bedair, J. Farari, J.P. Vilcot, D. Decoster

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 328 KB

english, 1991

111

Qualification of OMVPE AlGaAs/GaAs HBT structures using nondestructive photoreflectance spectroscopy

N. Bottka, D.K. Gaskill, P.D. Wright, R.W. Kaliski, D.A. Williams

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 364 KB

english, 1991

112

MOVPE growth of highly zinc-doped bases for GaAs/AlGaAs heterojunction bipolar transistors

S. Tanaka, M. Ohkubo, M. Irikawa, T. Kikuta

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 366 KB

english, 1991

113

LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistors

Yasuo Ashizawa, Takao Noda, Kouhei Morizuka, Masayuki Asaka, Masao Obara

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 378 KB

english, 1991

114

Growth and performance of AlGaAs/GaAs heterostructure bipolar transistors

N. Nordell, B. Willén, C.-O.A. Olsson, U. Westergren, G. Landgren

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 332 KB

english, 1991

115

AlGaAs/GaAs p-MODFET materials grown using intrinsic carbon doping

J.S. Roberts, K.C. Singh, C.C. Button, J.P.R. David, J. Woodhead

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 389 KB

english, 1991

116

MOVPE grown high performance 0.25 μm AlGaAs/InGaAs/GaAs pseudomorphic MODFETs

A.G. Thompson, H.M. Levy, B.-Y. Mao, G. Martin, G.Y. Lee

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 346 KB

english, 1991

117

Electrical and structural characterization of GaAs on InP grown by OMCVD; application to GaAs MESFETs

R. Azoulay, A. Clei, L. Dugrand, auN. Draïdia, G. Leroux, S. Biblemont

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 341 KB

english, 1991

118

MOVPE of AlInAs HEMT structures

Leye Aina, Mike Mattingly, Mary Serio, Eric Martin

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 546 KB

english, 1991

119

Pseudomorphic n-InGaP/InGaAs/GaAs grown by MOVPE for HEMT LSIs

M. Takikawa, T. Ohori, M. Takechi, M. Suzuki, J. Komeno

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 326 KB

english, 1991

120

Growth and characterization of double barrier resonant tunnelling diodes

H. Tews, R. Neumann, R.D. Schnell

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 307 KB

english, 1991

121

InAs-GaSb hot electron transistors grown by metalorganic chemical vapor deposition

K. Taira, F. Nakamura, I. Hase, H. Kawai, Y. Mori

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 203 KB

english, 1991

122

Ultralow doping profiles for applications in 3D integrated varactor tuned oscillators grown by MOVPE

I. Gyuro, F. Scheffer, M. Joseph, B. Roth, M. Heuken, K. Heime

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 235 KB

english, 1991

123

Current status review and future prospects of CBE, MOMBE and GSMBE

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 547 KB

english, 1991

124

Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 636 KB

english, 1991

125

MOMBE (metalorganic molecular beam epitaxy) growth of InGaAlAsSb system on GaSb

Hajime Asahi, Tadaaki Kaneko, Yasutoshi Okuno, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 400 KB

english, 1991

126

New starting materials for MOMBE

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 678 KB

english, 1991

127

Gas-source MBE growth and n-type doping of AlGaAs using TEG, TEA, AsH3 and Si2H6

T. Fujii, H. Ando, A. Sandhu, H. Ishikawa, Y. Sugiyama

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 422 KB

english, 1991

128

Mechanistic aspects relating to the growth of GaxIn1−xAs by CBE

C.L. French, A.T.S. Wee, J.S. Foord, G.J. Davies

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 89 KB

english, 1991

129

Studies of the surface reactivity of novel hydride adduct precursors for CBE growth of III–V compounds

J.S. Foord, A.J. Murrell, D. O'Hare, N.K. Singh, A.T.S. Wee, T.J. Whitaker

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 83 KB

english, 1991

130

Hydrogen-plasma and photo-effects on MOMBE of GaAs

I. Suemune, K. Hamaoka, A. Kishimoto, T. Koui, Y. Honda, M. Yamanishi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 104 KB

english, 1991

131

Doping of GaAs and InP in MOMBE using DEZn, TESn and DETe

J. Musolf, D. Marx, A. Kohl, M. Weyers, P. Balk

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 144 KB

english, 1991

132

Applications of spectroellipsometry to the growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy

W.E. Quinn, D.E. Aspnes, S. Gregory

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 105 KB

english, 1991

133

In situ control of the growing surface in high vacuum MOVPE of GaAs

J. Jönsson, K. Deppert, S. Jeppesen, G. Paulsson, L. Samuelson, P. Schmidt

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 98 KB

english, 1991

134

Selective growth of p+-GaAs by metalorganic molecular beam epitaxy

N. Furuhata, H. Shimawaki, A. Okamoto

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 143 KB

english, 1991

135

Growth and diffusion study of carbon doped GaAs superlattice grown by chemical beam epitaxy

T.H. Chiu, J.E. Cunningham, J.A. Ditzenberger, W.Y. Jan

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 130 KB

english, 1991

136

CBE growth of GaInAs/InP wafers for surface emitting lasers

Toshi K. Uchida, T. Uchida, K. Mise, N. Yokouchi, F. Koyama, K. Iga

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 143 KB

english, 1991

137

Growth of GaInAs by chemical beam epitaxy

J.F. Carlin, A. Rudra, R. Houdré, J.L. Staehli, M. Ilegems

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 171 KB

english, 1991

138

Monolayer epitaxial growth of GaInAs ternary by MOMBE

Hideo Kawanishi, Hirokazu Ikeda

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 90 KB

english, 1991

139

CBE growth of InGaAs for optoelectronic applications

F. Genova, G. Morello, G. Autore, L. Gastaldi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 135 KB

english, 1991

140

The search for all-hydride MOMBE: examination of trimethylamine alane, trimethylamine gallane, and arsine

D.A. Bohling, G.T. Muhr, C.R. Abernathy, A.S. Jordan, S.J. Pearton, W.S. Hobson

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 109 KB

english, 1991

141

The substrate—epitaxial interface of GaAs and InP grown by GSMBE

K. Tappura, A. Salokatve, K. Rakennus, H. Asonen, M. Pessa

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 113 KB

english, 1991

142

MOMBE growth of high quality GaAs/GaInP heterostructures

Ph. Maurel, Ph. Bove, J.C. Garcia, J.P. Hirtz, M. Razeghi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 76 KB

english, 1991

143

Author index

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 984 KB

english, 1991

144

Gas phase studies of MOVPE by optical methods

W. Richter, P. Kurpas, R. Lückerath, M. Motzkus, M. Waschbüsch

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 697 KB

english, 1991

145

Comparative pyrolysis studies of ethylarsines

S.H. Li, C.A. Larsen, G.B. Stringfellow

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 285 KB

english, 1991

146

Surface science studies of MOVPE processes: a review of progress

Martyn E. Pemble, David S. Buhaenko, Steven M. Francis, Peter A. Goulding, John T. Allen

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 883 KB

english, 1991

147

Reflectance-difference study of surface chemistry in MOVPE growth

L. Samuelson, K. Deppert, S. Jeppesen, J. Jönsson, G. Paulsson, P. Schmidt

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 337 KB

english, 1991

148

Patterned crystal growth of GaAs using laser scanning with atomic layer epitaxy

S. Iwai, T. Meguro, Y. Aoyagi, T. Miyoshi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 423 KB

english, 1991

149

Non-planar MOVPE growth using a novel shadow-masking technique

P. Demester, L. Buydens, I. Moerman, D. Lootens, P. Van Daele

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 343 KB

english, 1991

150

Influence of gas mixing and expansion in horizontal MOVPE reactors

N.J. Mason, P.J. Walker

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 492 KB

english, 1991

151

Plasma MOVPE of ternary and quaternary layers

M. Behet, A. Brauers, P. Balk

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 379 KB

english, 1991

152

Doping level anomalies resulting from exposure to dopant precursors during cooling in MOVPE

S. Cole, L. Davis, W.J. Duncan, E.M. Marsh, R.H. Moss, W.J.M. Rothwell, P.J. Skevington, G.D.T. Spiller

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 307 KB

english, 1991

153

Silicon spike-doping of GaAs with AP-MOVPE

Peter Schmidt, Knut Deppert, Helmar Kostial

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 260 KB

english, 1991

154

On the “tunnel” diffusion of iron dopant in InP

E.W.A. Young, G.M. Fontijn

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 292 KB

english, 1991

155

Alternative precursors for III–V MOVPE criteria for evaluation

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 656 KB

english, 1991

156

Precursors for II–VI semiconductors: requirements and developments

A.C. Jones, P.J. Wright, B. Cockayne

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 817 KB

english, 1991

157

Physical properties of non-pyrophoric group III precursors for MOVPE

L. Pohl, M. Hostalek, H. Schumann, U. Hartmann, W. Wassermann, A. Brauers, G.K. Regel, R. Hövel, P. Balk, F. Scholz

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 241 KB

english, 1991

158

Detection of phenylarsine in air

J. Zacheja, A. Schütze, A. Brauers, D. Kohl

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 306 KB

english, 1991

159

Epitaxial growth of GaAs with (C2H5)2GaCl and AsH3 in a hot-wall system

N.I. Buchan, T.F. Kuech, M.A. Tischler, R. Potemski

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 394 KB

english, 1991

160

Atmospheric-pressure MOVPE growth of InP using Lewis base monovalent cyclopentadienyl indium

K. Onuma, A. Kasahara, K. Kato, N. Aihara, T. Udagawa

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 265 KB

english, 1991

161

Novel liquid precursors for the growth of InP and GaInAs epitaxial layers by MOVPE

F. Scholz, A. Molassioti, M. Moser, B. Notheisen, K. Streubel, M. Hostalek, L. Pohl

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 315 KB

english, 1991

162

MOVPE of AlN and GaN by using novel precursors

Kwok-Lun Ho, Klavs F. Jensen, Jen-Wei Hwang, Wayne L. Gladfelter, John F. Evans

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 360 KB

english, 1991

163

Growth of GaInAs bulk mixed crystals as a substrate with a tailored lattice parameter

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 379 KB

english, 1991

164

Hetero-epitaxy of ZnSiAs2/GaAs grown by atmospheric pressure MOVPE

N. Achargui, A. Benachenhou, A. Foucaran, G. Bougnot, P. Coulon, J.P. Laurenti, J. Camassel

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 392 KB

english, 1991

165

Surface morphology improvement of GaAs-on-Si using a two-reactor MOCVD system and an AlAs/GaAs low temperature buffer layer: an approach to crack-free GaAs-on-Si

T. Nishimura, K. Kadoiwa, N. Hayafuji, M. Miyashita, K. Mitsui, H. Kumabe, T. Murotani

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 285 KB

english, 1991

166

Optical quality improvement of MOVPE grown GaAlAs/GaAs double heterostructures on silicon substrates

N. Draïdia, R. Azoulay, L. Dugrand, A.C. Papadopoulo, Y. Gao, B. Sermage, P. Ossart, J. Meddeb

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 572 KB

english, 1991

167

Temperature resolved photoluminescence investigations on InGaAs/InP MQWs

R. Schwedler, F. Reinhardt, D. Grützmacher, K. Wolter

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 395 KB

english, 1991

168

Investigation of InxGa1−xAs/GaAs strained quantum well structures grown on non-planar substrates by MOCVD

Piotr Grodzinski, Yao Zou, Julian S. Osinski, P. Daniel Dapkus

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 607 KB

english, 1991

169

Low temperature MOCVD of Hg1−xCdxTe on 311, 511, 711 and shaped GaAs

G.N. Pain, C. Sandford, G.K.G. Smith, A.W. Stevenson, D. Gao, L.S. Wielunski, S.P. Russo, G.K. Reeves, R. Elliman

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 401 KB

english, 1991

170

Reaction measurements and growth of HgTe/CdTe by photo-assisted MOCVD using an excimer laser

Y. Fujita, T. Terada, S. Fujii, T. Iuchi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 265 KB

english, 1991

171

HRTEM studies of defects and interdiffusion in Hg1−x−yMnyCdxTe (O⩽x, y⩽1) grown by low temperature MOCVD

G.N. Pain, C.J. Rossouw, S.R. Glanvill, R.S. Rowe, R.S. Dickson, G.B. Deacon, B.O. West

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 321 KB

english, 1991

172

Surface photochemical reactions for alkyl group elimination from precursors in OMVPE

Shizuo Fujita, Seiji Maruo, Hiromu Ishio, Prakash A. Murawala, Shigeo Fujita

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 378 KB

english, 1991

173

The effects of photo-assisted MOCVD on the doping of Na acceptors into ZnS epitaxial layers

Tetsuichiro Ohno, Tsunemasa Taguchi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 265 KB

english, 1991

174

High quality over-epilayer growth of ZnSe on Li+-implanted ZnSe epilayers by atmospheric pressure MOVPE

Tokuo Yodo, Kazuhiro Ueda, Kenji Morio, Ken Yamashita, Shuhei Tanaka

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 280 KB

english, 1991

175

In-situ growth of YBCO high-Tc superconducting thin films by plasma-enhanced metalorganic chemical vapor deposition

J. Zhao, C.S. Chern, Y.Q. Li, D.W. Noh, P.E. Norris, P. Zawadzki, B. Kear, B. Gallois

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 351 KB

english, 1991

176

Structures for improved 1.5 μm wavelength lasers grown by LP-OMVPE; InGaAs-InP strained-layer quantum wells a good candidate

P.J.A. Thijs, E.A. Montie, T. van Dongen

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 757 KB

english, 1991

177

Metalorganic chemical vapor deposition of InGaAs-GaAs-AlGaAs strained-layer quantum well lasers

P.K. York, K.J. Beernink, J. Kim, J.J. Alwan, J.J. Coleman, C.M. Wayman

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 709 KB

english, 1991

178

Interaction of the dopants Mg and Si in AlxGa1−x As/GaAs heterolayers (MOVPE): application to DQW laser structures

L. Korte, R. Treichler, M. Schreiber, Ch. Tanner, G. Kristen, C. Hanke, G. Weimann

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 348 KB

english, 1991

179

In0.47Ga0.53As-InP heterostructures for vertical cavity surface emitting lasers at 1.65 μm wavelength

R.D. Dupuis, D.G. Deppe, C.J. Pinzone, N.D. Gerrard, S. Singh, G.J. Zydzik, J.P. van der Ziel, C.A. Green

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 465 KB

english, 1991

180

Lasing characteristics of InGaAs/InGaAsP MQW structures grown by low-pressure MOVPE

M. Rosenzweig, W. Ebert, D. Franke, N. Grote, B. Sartorius, P. Wolfram

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 268 KB

english, 1991

181

Improvement of InP crystal quality grown on GaAs substrates and device applications

Tatsuya Kimura, Tadashi Kimura, Eitaro Ishimura, Fumito Uesugi, Mari Tsugami, Kazuo Mizuguchi, Toshio Murotani

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 286 KB

english, 1991

182

LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers (λg < 1.2 μm) for optical waveguide applications

F.W. Reier, P. Harde, H. Kaiser

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 246 KB

english, 1991

183

High frequency AlGaAs/GaAs heterojunction bipolar transistors: the role of MOVPE

G. Packeiser, H. Tews, P. Zwicknagl

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 658 KB

english, 1991

184

Growth mechanism studies in CBE/MOMBE

T. Martin, C.R. Whitehouse, P.A. Lane

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 633 KB

english, 1991

185

Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys

J.L. Benchimol, G. Le Roux, H. Thibierge, C. Daguet, F. Alexandre, F. Brillouet

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 241 KB

english, 1991

186

Carbon incorporation in GaAs and AlGaAs grown by MOMBE using trimethlgallium

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 411 KB

english, 1991

187

Some comparisons of chemical beam epitaxy with gas source molecular beam epitaxy

G.J. Davies, P.J. Skevington, E.G. Scott, C.L. French, J.S. Foord

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 664 KB

english, 1991

188

Si and Ge gas-source molecular beam epitaxy (GSMBE)

Maki Suemitsu, Fumihiko Hirose, Nobuo Miyamoto

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 418 KB

english, 1991

189

Surface chemistry of a new III–V MOCVD reactant: PhAsH2 on GaAs(100)

A. Schütze, J. Zacheja, M. Weyers, D. Kohl

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 134 KB

english, 1991

190

Correlation of carbon incorporation from TEG and effective V/III ratio on the surface in MOMBE grown GaAs

M. Kamp, G. Mörsch, M. Weyers, H. Lüth

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 127 KB

english, 1991

191

On the growth of GaInAs by MOMBE (CBE)

H. Heinecke, B. Baur, R. Höger, A. Miklis, B. Jobst

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 141 KB

english, 1991

192

Effects of surface pre-treatment and hydrogen on ALE of ZnSe on GaAs in MOMBE

Yoichi Kawakami, Takashi Toyoda, Yi-Hong Wu, Shizuo Fujita, Shigeo Fujita

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 117 KB

english, 1991

193

InGaAs MOMBE — system drift and material quality

E. Woelk, M.E. Sherwin, G.O. Munns

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 84 KB

english, 1991

194

Subject index

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 245 KB

english, 1991

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