High carbon doping of AlxGa1−xAs (O ≤x ≤ 1) by atomic layer...

High carbon doping of AlxGa1−xAs (O ≤x ≤ 1) by atomic layer epitaxy for device applications

B.-C. Chung, R.T. Green, H.F. MacMillan
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Volume:
107
Year:
1991
Language:
english
Pages:
7
DOI:
10.1016/0022-0248(91)90439-c
File:
PDF, 525 KB
english, 1991
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