High carbon doping of AlxGa1−xAs (O ≤x ≤ 1) by atomic layer epitaxy for device applications
B.-C. Chung, R.T. Green, H.F. MacMillanVolume:
107
Year:
1991
Language:
english
Pages:
7
DOI:
10.1016/0022-0248(91)90439-c
File:
PDF, 525 KB
english, 1991