Selective area epitaxy of GaAs on Si using atomic layer epitaxy by LP-MOVPE
N.H. Karam, V. Haven, S.M. Vernon, N. El-Masry, E.H. Lingunis, N. HaegelVolume:
107
Year:
1991
Language:
english
Pages:
7
DOI:
10.1016/0022-0248(91)90444-a
File:
PDF, 447 KB
english, 1991