Growth of extremely uniform III–V compound semiconductor layers by LP-MOVPE by application of the gas foil technique for substrate rotation
D. Schmitz, G. Strauch, H. Jürgensen, M. HeyenVolume:
107
Year:
1991
Language:
english
Pages:
4
DOI:
10.1016/0022-0248(91)90454-d
File:
PDF, 230 KB
english, 1991