Strong enhancement of band edge PL intensity and improved morphology for AlGaAs grown on lenticular GaAs substrates by low pressure MOVPE
Eric S. JohnsonVolume:
107
Year:
1991
Language:
english
Pages:
6
DOI:
10.1016/0022-0248(91)90463-f
File:
PDF, 338 KB
english, 1991